SFH2012A SIEMENS | Alldatasheet

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SIEMENS AKTIENGESELLSCHAF 4?E D MM 4235605 002734? O MMSIEG SIEMENS non. Package Dimensions in Inches (mm) aa , 8 Ragant " 7 Ne catHo0e gay 23 ee a <a 539137) . OS, Se 100 pe i | 1864472) 217165) ' a 254) ——H | aa 20983} . os) Sours 157 (40) ba 3) to chp Location

FEATURES

  • TO-18 Hermetic Package, 3 Leads. * Isolated Case * Flat Glass Lens Maximum Ratings * For Fiber Optic Communications Reverse Voltage (Va) 60V Storage Temperature Range(T. -40 to +80°C Junction Temperature (7) gore

DESCRIPTION

SF2012A 1s a planar silicon PIN-photo diode Characteristics (Tam) = 25°C) The case (18A3 DIN 41876—similar to TO-18) Wavelength of Max Pr snety " 80 in has a flat glass lens top The cathode and Radiant Senet eae nosensaty sam 1 me anode are electrically isolated from the case Dark Current (Vg = 20V E = 0) ly 1 (<5) nA The diode ts a receive" with high operating Spectral Sensitivity (A = 850 am) Ss 055 AW frequency, very low reverse current, and fast © = 950 nm) s\\ 0.45 (20.95) AW switching tme Because of the flat lens,the Quanium Yet ' tum Yield (Electr« hoton) Electrons diode 1s especially suitable for use with fiber Dn BS a os Ber Photon) 1 080 “thoton optic cables, up to 560 Mbrts. Rise Time of the Photocurrent SFH202 (R_ = 509 Vz = 20V, A = 900 nm) L OS(s) ns ‘SFH202a (R, = SOM Vz = SOV » = 850 nm) L 3 ns Cut ott Frequency {R, = 502 Vq ~ 20) SFH2012 (A = 900 nm) ly 500 MHz SFH2012A (A = 850 nm) fa 200 MHz Capacitance (Vp = OV) Cy 13 pe (Ve =1¥) ¢ 7 oF . (Va = 12) C, 33 oF (Wp = 20V) Cig 3 pF Temperature Coeticient for Ip 1k 02 tuk w Noise Equivalent Power (Vz = 20 V) NEP 33x 104 Vz om V Hz Detection Limit o- 31x 10% w 6-24

SIEMENS AKTIENGESELLSCHAF 4?E D MM 8235605 0027348 2 MMSIEG F450 ‘Spectral sensitivity S=t(r) Relative spectral sensitivity and quantum yield 7 =1() Sq E100 In electrons per photon * a 80) ai Ise AN | 7 a LZ bol, wo—_AtT Ty oll IN. =H 7 rT ofAtt ll a e “AH see ati tty. oeoeoe MO 60 S00 600 700 B00 900 1800.0 400 500 600 700 800 900 1000 nm ld al Forward current |, = 1(V/,) Dark current |, = (7,4) ad ca es Ss Ss Saaaeee cee a fete eee sree BES Sseer Meceneneen wee BS2eS=——=— Bes 7 == Zettel sae) 4aee= Ga Tel SS oe-== seers "Bp ee fy a es Paz par SSSeSS==== 0 et S.-i = J = wi lL TTT TT TTT wl =e a . Tie tnaneueny Te i; ame * 8 Cn ne BE Dark current i, = f(V,) Junction capacitance © = 1(V,) Sortos resistance R, = v,) =° ™ ~- A | aot TH, co” Ce , -\\-}-|—lE- t fe « PE { iy aquenenaee eure aL Jot Vey. Lf SE gaan | A Sn ent mi “\\}—-H of | s iM q ~} -K ES "pte Ska peaine " wey | CUNT TTT |-— | — =F cl es Coit Shot [1 “Eble ts EA ne re eo Cee | = a aio CO rs oo o S$ © BH 2 2% MW w ° ” vito 0 0 w Do Sov — Va "VY, + Vy econ carci = rroacunnty =i) es b FH iri (iis cee imate ‘ wo eS 2 ony kun ea nH DSTO ee Fe Hae fs we FEE EBS H sor oe CDT TET / * ” a a a i sean