SF31 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 3.0A
- VRRM 50V-600V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SF3X X:From 1 to 8 DO-2 DO-27 Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode SF31 THRU SF38 Electrical Characteristics (Ta=25℃ Unless otherwise specified) SF Item Symbol Unit Test Condition Peak Forward Voltage V FM V I FM =3.0A I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 Reverse Recovery time t rr ns I F =0.5A I R =1A I RR =0.25A 35 R θJ-A Between junction and ambient 30 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 10 31 32 33 34 35 36 37 38 0.95 1.25 1.7 Item Symbol Unit I F(AV) I FSM I 60Hz Half-sine wave, Resistance load, Ta=50℃ 60Hz Half-sine wave,1 cycle, Ta=25℃ SF 31 32 33 34 35 36 37 38 50 100 150 200 300 400 500 600 3.0 125 70 105 140 210 280 350 42035 V RMS V Maximum RMS Voltage
H igh Diode Semiconductor 1.5 2.25 50 150 FIG.1 FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length Ta( 100 0.75 3.0 IFSM(A) Number of Cycles : FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 12 1 0 2 0 100 100 150 175 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.2 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) SF31-SF34 SF35-SF36 SF37-SF38 FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 V R D R L I F IF I R I RR t t rr I 图 反向恢复时间试验电路及测试波形示意图 FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers