SF21 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SF22 SF23 SF24 SF25 SF26 SF27 SF28 UNITS Max imum r ec ur r ent peak r ev er s e v oltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 2.0A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =125 Max imum r ev er s e r ec ov er y time ( Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG 1.25 1.70.95 SF21- - - SF28 A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents I F(AV) 3. Thermal resistance f rom junction to ambient. A I R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 125 SUPER FAST RECTIFIERS SF21 50 100 150 200 300 400 500 600 The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 50 --- 600 V CURRENT: 2.0 A DO - 15 50.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 35 70 105 140 210 280 350 420 50 100 150 200 300 400 500 600 2.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
FIG.2 -- TYPICAL FORW ARD CHARACTERISTIC FIG.3 -- FORW ARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORW ARD SURGE CURRENT AMBIENT TEMPERATURE, PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS SF21 - - - SF28 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AVERAGE FORWARD CURRENT SET TIME BASE FOR 10 ns/cm JUNCTION CAPACITANCE,pF NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORW ARD VOLTAGE, V OLTS INSTANTANEOUS FORWARD CURRENT t rr -1 .0 A -0 .2 5 A + 0 .5 A 1cm T J =25 100 200 0.1 0.2 0.4 1 2 4 10 40 10020 SF25 - SF28 SF21 - SF24 PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) 0.5 1.0 0 25 50 75 100 125 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm)Lead Length 175 1.5 2.0 2.5 3.0 1 10 100 8.3ms Single Half Sine-W ave 0.01 0.1 100 Tj=25 C Pulse Width=300 s 1% Duty Cycle o SF 21~SF SF 25~SF SF 27~SF Diode Semiconductor Korea www.diode.kr