S9016 DSK | Alldatasheet
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Technical content
Silicon Epitaxial Planar Transistor S9016
FEATURES
z Collector Current.(I C = 25mA） z Power dissipation.(P C =200mW)
APPLICATIONS
z AM converter, FM/RM amplifier of low noise. SOT-23
ORDERING INFORMATION
Type No. Marking Package Code S9016 Y6 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage 30 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 4 V I C Collector Current -Continuous 25 mA P C Collector Dissipation 200 mW T T stg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
Silicon Epitaxial Planar Transistor S9016
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 30 V Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 4 V Collector cut-off current I CBO V CB =30V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =3V,I C =0 0.1 μA DC current gain h FE V CE =5V,I C =1mA 28 90 198 Collector-emitter saturation voltage V CE(sat) I C =10mA, I B = 1mA 0.1 0.3 V Base-emitter on voltage V BE(on) V CE =5V, I C =1mA 0.72 V Transition frequency f T V CE =5V, I C = 1mA 400 620 MHz Output capacitance C ob V CB =10V, I E =0,f=1MHz 1.2 1.6 pF Noise figure NF V CE =5V,I C =1.0, f=100MHz,R S =50Ω 1.2 1.6 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9016 www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor S9016 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1Typical K 2.35 2.45 All Dimensions in mm Device Package Shipping S9016 SOT-23 3000/Tape&Reel www.diode.kr Diode Semiconductor Korea