MMBD330 DSK | Alldatasheet
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Technical content
Schottky Barrier Diode MMBD330/MMBD770
FEATURES
z Extremely low minority carrier lifetime. z Very low capacitance. z Low reverse leakage.
APPLICATIONS
z For high-efficiency UHF a nd VHF detector application. SOT-323
ORDERING INFORMATION
Type No. Marking Package Code MMBD330 4T SOT-323 MMBD770 5H SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Reverse voltage MMBD330 MMBD770 V R 70 V Forward Continuous Current (DC) I F 200 mA Peak Forward Surge Current I FSM 1.0 A Power Dissipation P d 120 mW Junction temperature T j 150 ℃ Storage temperature range T stg -55-+150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
Schottky Barrier Diode MMBD330/MMBD770
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse Breakdown voltage MMBD330 MMBD770 V (BR)R I R =100μA 30 70 V Reverse current MMBD330 MMBD770 I R V R =25V V R =35V 200 200 nA Forward voltage MMBD330 MMBD770 V F I F =1.0mA I F =10mA I F =1.0mA I F =10mA 0.45 0.60 0.50 1.0 V Diode capacitance MMBD330 MMBD770 C D V R =15V,f=1MHz V R =20V,f=1MHz 0.9 0.5 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Schottky Barrier Diode MMBD330/MMBD770 www.diode.kr Diode Semiconductor Korea
Schottky Barrier Diode MMBD330/MMBD770 PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
MMBD330/MMBD770 SOT-323 3000/Tape&Reel SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J 0.1Typical K 2.1 2.3 All Dimensions in mm www.diode.kr Diode Semiconductor Korea