SF1500GX22 TOSHIBA | Alldatasheet

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TOSHIBA THYRISTOR SILICON DIFFUSED TYPE HIGH POWER CONTROL APPLICATIONS Unit in mm © Repetitive Peak Off-State Voltage : VpRM a patsoe Repetitive Peak Reverse Voltage : Vj =4000V = meee Pp g : VRRM =< _o=t @ Average On-State Current : Ip(ay)=1500A / Wer | © Turn-Off Time 2 tq=400 0s (Max.) \\ }}] “T © Critical Rate of Rise of On-State Current : di/dt=250A/ ys LY) woes | P @ Critical Rate of Rise of Off-State Voltage : dv/dt=1500V/ us Q = -@ | Sroeos sous e Flat Package ? 1 ‘i rer MAXIMUM RATINGS e Sscunx CHARACTERISTIC SYMBOL RATING 1-(1) CATHODE see 1-(2) CATHODE (BLACK) Repetitive Peak Off-State Voltage VpRM 2 ANODE and Repetitive Peak Reverse VRRM 4000 Vv 3 GATE (WHITE) Voltage JEDEC _ Non-Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, VrsM 4400 Vv T;=0~125°C) TOSHIBA _13-120J2A R.MS On-State Current Tp(RMS) 2355 Weight : 1850g Average On-State Current Peak One Cycle Surge On-State 30000 (50Hz) . ith ITsM A Current (Non-Repetitive) 33000 (60Hz) Pt Limit Value 4500 x 10° Critical Rate of Rise of On-State i/ 2 A/ Current (Note) Peak Gate Power Dissipation | Pom | _30_—d| W_| Average Gate Power Dissipation PG (AV) Peak Forward Gate Current | Iam [| | A | Peak Forward Gate Voltage | Veam | 30 | _v_| Peak Reverse Gate Voltage Vrom Storage Temperature Range —40~125 Mounting Force | — | 39.2+3.9 Note : Vp=1/2 Rated, Tj=120°C, Gate Supply (Vg=15V, Rg=80, tr=1ys) 261001 a2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to their inherent electrical Sensitivity and vulnerability to physical stres. itis the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsiblity is assumed by, TOSHIBA CORPORATION for any Infringements of intellectual property Or other rights of the third parties which may result from Its use. ‘NO license Is granted By implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice 1997-02-03 1/3

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL TEST CONDITION Repetitive Peak Off-State I Current and Repetitive Peak eM VpDRM= VRRM = Rated, Tj=125°C 120 | mA Reverse Current RRM Peak On-State Voltage Tpm=5000A, T;=25°C [| — | 24] v | Gate Trigger Current Igt — mA m=25°C | — | 400 | Vp=1/2 Rated, T;=125°C Gate Non-Trigger Current [5 | — | ma | VD=05 Rated, 1)=25°C [=| 5] «| - Gate Supply Ip=1200A, Vp=200V, Turn-Off Time tq dv /dt=25V/ ps, Tj=115°C, 400 | ys VpRM=1/2 Rated Holding Current Tj=25°O, RL=60 | — | 300 | ma | Critical Rate of Rise of VpRM=1/2 Rated, Tj=125°C Off-State Voltage dv/dt | Gate Open Exponential Rise 1500 Vins Thermal Resistance Junction to Fin [| —_ [0.0125 1997-02-03 2/3

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BN Neow=sow 6 a PEE s JZCONO See 2 LT Tut TT ee en 7 a 5 aN tones & % 1 2 3 4 5 6 7 8 b3 12 16 2.0 24 28 3.2 3.6 INSTANTANEOUS GATE CURRENT ig (A) INSTANTANEOUS ON-STATE VOLTAGE Ur (V) PT(AV) — IT(AV) PT(AV) — IT(AV) 4000; 4000, Pitty yet yey [Ty yey yt. pA || gs oot} tt tet TT zs wot | | | dae AY I | a ELE TT myst tt a Ll tte VY/7y tT | 22 sot tt VABEeEs £2 wool | er yZZ i | eee // eee ge Vi A/ | | | i | e/a 2S seo | LY _| trcrncutar & |e t\\. o/s I Zit tl CONDUCTION Ly | i | CONDUCTION 0 400 800 1200 1600 2000 2400 0 400 800 1200 1600 2000 2400 AVERAGE ON-STATE CURRENT Ip(ay) (A) AVERAGE ON-STATE CURRENT Iqiay) (A) SURGE ON-STATE CURRENT TRANSIENT THERMAL IMPEDANCE ° enna’ 0086

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x 1 | | yp BCE ar Z Sood ee ern TTT | Fre coer NUMBER OF CYCLES AT 50Hz AND 60Hz TIME t (s and ms) TTT 4997-02-03 3