SF11G DSK | Alldatasheet
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FEATURES
Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SF12G SF13G SF14G SF15G SF16G UNITS Maximum recurrent peak reverse voltage V RRM 100 150 200 300 400 V Max imum RMS v oltage V RMS 70 105 140 210 280 V Max imum DC bloc king v oltage V DC 100 150 200 300 400 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Max imum ins tantaneous f or w ar d v oltage @ 1.0A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Max imum r ev er s e r ec ov er y time ( Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG 50.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.0 SUPER FAST RECTIFIERS SF11G The plastic material carries U/L recognition 94V-0 VOLTAGE RA NGE: 50 --- 400 V CURRENT: 1.0 A DO - 41 3. Thermal resistance f rom junction to ambient. A 30.0 I R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 150 1.250.95 SF11G --- SF16G A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents I F(AV) Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.01 0.1 1.0 T J =25 Pulse Width=300 µ s SF11G - SF14G 0.02 0.04 0.2 0.4 2.0 4.0 SF15G - SF16G AMPERES AMPERES AMPERES FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS SF11G --- SF16G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AVERAGE FORWARD CURRENT SET TIME BASE FOR 10 ns/cm JUNCTION CAPACITANCE,pF NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT t rr -1.0A -0.25A +0.5A 1cm 0.1 0.2 0.4 1 2 4 10 40 100200.1 0.2 0.4 1.0 2.0 4.0 SF11G - SF14G SF15G- SF16G T J =25 f=1.0MHZ PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) 1 1 0 100 8.3ms Single Half Sine-Wave 1.0 2.0 0 25 50 75 100 125 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm)Lead Length 175 www.diode.kr Diode Semiconductor Korea