SEW-BZSG | DigiCamel IC Datasheet

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SEW-BZSG DOMINANT | Alldatasheet

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PDF pages: 16

Technical content

20/12/2017 V4.01 Features: > Super high brightness surface mount LED > 120° viewing angle. > Compact package outline (LxW) of 3.0 x 1.4 mm. > Ultra low height profile - 0.52mm. > Low thermal resistance. > Build-in ESD protection device. > Environmental friendly; RoHS compliance. > Compliance to automotive standard; AEC-Q101. Spice: Synonymous with function and performance, the new era of high intensity illumination in LED. With its high flux output and high luminous intensity, It transcends today LED lightings technology and how we perceive it. DATA SHEET : SpicePlus 3014

80 InGaN White : SEW-BZSG

Angle˚ Luminous Flux @ 80mA (lm) Appx. 1.2 SEW-BZSG-7P8Q-1 White 120 25.1 Electrical Characteristics at Tj=250C Vf @ If = 80 mA Appx. 3.1 3.0 Part Number Min. (V) Typ. (V) Max. (V) SEW-BZSG 2.7 3.2 Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current Reverse voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature Thermal resistance - Junction / solder point, R th JS (Mounted on dual sided FR4 in house PCB, total Cu area >900mm2) 150 200 Not for reserve bias 2000 120 -40 … +100 -40 … +100 mA mA V V K/W Optical Characteristics at Tj=250C Min. Typ. Max. 30.6 37.3 20/12/2017 V4.0

80 InGaN White: SEW-BZSG

SEW-BZSG, Color Grouping Appx. 2.1 Bin 0.3000 0.2934 0.2950 0.2842 0.2900 0.2750 0.2850 0.2658 0.2800 0.2566 0.2750 0.2474 0.2700 0.2382 0.2650 0.2290 0.2600 0.2198 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy 0.3000 0.3034 0.2950 0.2942 0.2900 0.2850 0.2850 0.2758 0.2800 0.2666 0.2750 0.2574 0.2700 0.2482 0.2650 0.2390 0.2600 0.2298 0.3050 0.3126 0.3000 0.3034 0.2950 0.2942 0.2900 0.2850 0.2850 0.2758 0.2800 0.2666 0.2750 0.2574 0.2700 0.2482 0.2650 0.2390 0.3050 0.3026 0.3000 0.2934 0.2950 0.2842 0.2900 0.2750 0.2850 0.2658 0.2800 0.2566 0.2750 0.2474 0.2700 0.2382 0.2650 0.2290 1 2 3 4 Color Bin Structure 20/12/2017 V4.0 0.190 0.200 0.210 0.220 0.230 0.240 0.250 0.260 0.270 0.280 0.290 0.300 0.310 0.320 White Color Structure B9C1

4 20/12/2017 V4.0 Bin 1 2 3 4 0.3000 0.2834 0.2950 0.2742 0.2900 0.2650 0.2850 0.2558 0.2800 0.2466 0.2750 0.2374 0.2700 0.2282 0.2650 0.2190 0.2600 0.2098 0.2550 0.2206 0.2550 0.2106 0.3000 0.2934 0.2950 0.2842 0.2900 0.2750 0.2850 0.2658 0.2800 0.2566 0.2750 0.2474 0.2700 0.2382 0.2650 0.2290 0.2600 0.2198 0.2600 0.2298 0.2600 0.2198 0.3050 0.3026 0.3000 0.2934 0.2950 0.2842 0.2900 0.2750 0.2850 0.2658 0.2800 0.2566 0.2750 0.2474 0.2700 0.2382 0.2650 0.2290 0.2600 0.2198 0.2600 0.2098 0.3050 0.2926 0.3000 0.2834 0.2950 0.2742 0.2900 0.2650 0.2850 0.2558 0.2800 0.2466 0.2750 0.2374 0.2700 0.2282 0.2650 0.2190 0.2550 0.2106 0.2550 0.2006 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy

Brightness Group Luminous Flux Appx. 1.2 (lm) Luminous Intensity Group 20/12/2017 V4.0 Group Wavelength distribution (nm)Forward Voltage (V) Appx. 3.1 Vf Binning Vf Bin @ 80mA

6 20/12/2017 V4.0 Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V)Forward Current IF (mA) Forward Current I F (mA) Relative Luminous Flux Ф rel Relative Luminous Flux Vs Forward Current ФV/ФV(80mA) = f(IF); Tj = 25°C Forward Current I F (mA) Temperature T(°C) Maximum Current Vs Temperature IF=f(T) Forward Current IF (mA Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Relative Spectral Emission Фrel = f(λ); Tj = 25°C; IF = 80mA Relative Luminous Flux Ф rel Wavelength λ (nm) Allowable Forward Current I F( mA ) Duty Ratio, % Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) ∆Cx, ∆Cy IF (mA) Vf (V) Flux(lm) Cx Cy Wavelength (nm) Flux Normalized @ 120mA UCx UCy Uλ 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 Forward Current IF (mA) Forward Voltage (V) Forward Current Vs Forward Voltage 0.2 0.4 0.6 0.8 350 400 450 500 550 600 650 700 750 Relative Intensity Vs Wavelength Wavelength (nm) Relative Intensity ∆Cx ∆Cy -0.04 -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 0.04 0 15 30 45 60 75 90 105 120 135 150 Blue -0.80 -0.60 -0.40 -0.20 0.00 0.20 0.40 0.60 0.80 0 10 20 30 40 50 60 70 80 Relative Wavelength λrel (nm) Relative Wavelength Shift Vs Forward Current λdom = f(IF); Tj = 25°C Forward Current IF (mA) ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C Forward Current IF (mA) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 15 30 45 60 75 90 105 120 135 150 105 120 135 150 Relative Luminous Flux Фrel Forward Current IF (mA) Forward Current IF (mA) Relative Lumionous Flux Vs Forward Current ФV/ФV(80mA) = f(IF); Tj = 25°C Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) Relative Luminous Flux Фrel Relative Spectral Emission Фrel = f(λ); Tj = 25°C; IF = 80mA Wavelength λ(nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) TA 100 120 140 160 180 200 220 240 0 20 40 60 80 100 120 TA = Ambient Temperature TS = Solder Point Temperature Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 1 10 100 TS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 15 30 45 60 75 90 105 120 135 150 105 120 135 150 Relative Luminous Flux Фrel Forward Current IF (mA) Forward Current IF (mA) Relative Lumionous Flux Vs Forward Current ФV/ФV(80mA) = f(IF); Tj = 25°C Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) Relative Luminous Flux Фrel Relative Spectral Emission Фrel = f(λ); Tj = 25°C; IF = 80mA Wavelength λ(nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) TA 100 120 140 160 180 200 220 240 0 20 40 60 80 100 120 TA = Ambient Temperature TS = Solder Point Temperature Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 1 10 100 TS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 15 30 45 60 75 90 105 120 135 150 105 120 135 150 Relative Luminous Flux Фrel Forward Current IF (mA) Forward Current IF (mA) Relative Lumionous Flux Vs Forward Current ФV/ФV(80mA) = f(IF); Tj = 25°C Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) Relative Luminous Flux Фrel Relative Spectral Emission Фrel = f(λ); Tj = 25°C; IF = 80mA Wavelength λ(nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) TA 100 120 140 160 180 200 220 240 0 20 40 60 80 100 120 TA = Ambient Temperature TS = Solder Point Temperature Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 1 10 100 TS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 15 30 45 60 75 90 105 120 135 150 105 120 135 150 Relative Luminous Flux Фrel Forward Current IF (mA) Forward Current IF (mA) Relative Lumionous Flux Vs Forward Current ФV/ФV(80mA) = f(IF); Tj = 25°C Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C Forward Voltage VF (V) Relative Luminous Flux Фrel Relative Spectral Emission Фrel = f(λ); Tj = 25°C; IF = 80mA Wavelength λ(nm) Forward Current IF (mA) Maximum Current Vs Temperature IF = f (T) Temperature T(°C) TA 100 120 140 160 180 200 220 240 0 20 40 60 80 100 120 TA = Ambient Temperature TS = Solder Point Temperature Allowable Forward Current IF( mA ) Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs ) Duty Ratio, % 100 1000 1 10 100 TS

7 20/12/2017 V4.0 Junction Temperature Tj(°C) Relative Forward Voltage ∆V F (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF =80mA Junction Temperature Tj(°C) Relative Luminious Flux Ф rel Relative Luminious Flux Vs Junction Temperature ФV/ФV(25°C) = f(Tj); IF = 80mA Junction Temperature Tj(°C) ∆Cx , ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 80mA -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 -50 -30 -10 10 30 50 70 90 110 130 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 130 150 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF -V F(25°C) = f(Tj); IF = 80mA Junction Temperature Tj(°C) Relative Luminious Flux Фrel Relative Luminious Flux Vs Junction Temperature ФV/ФV(25°C) = f(Tj); IF = 80mA Junction Temperature Tj(°C) -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 -50 -30 -10 10 30 50 70 90 110 130 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 130 150 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF -V F(25°C) = f(Tj); IF = 80mA Junction Temperature Tj(°C) Relative Luminious Flux Фrel Relative Luminious Flux Vs Junction Temperature ФV/ФV(25°C) = f(Tj); IF = 80mA Junction Temperature Tj(°C) -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 -50 -30 -10 10 30 50 70 90 110 130 150 ∆Cx ∆Cy -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 -40 -15 10 35 60 85 110 135 Relative Wavelength ∆λdom(nm) Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 50mA ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 80mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) 08/12/2016 V7.09 InGaN Warm White: DDF-LJG DOMINANT Opto Technologies Innovating Illumination TM Radiation Pattern Junction Temperature Tj(°C) Relative Forward Voltage ∆V F (V) Junction Temperature Tj(°C) Relative Luminous Intensity I rel Relative Luminous Intensity Vs Junction Temperature IV/IV(25°C) = f(Tj); IF = 20mA Junction Temperature Tj(°C) ∆Cx , ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA 0.270° 90° 80° 60° 50° 40° 30° 20° 0.6 0.4 1.0 0.8 10° 0° -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -50 -30 -10 10 30 50 70 90 110 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 130 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF -V F(25°C) = f(Tj); IF = 20mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 20mA Relative Luminous Intensity Irel -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -50 -30 -10 10 30 50 70 90 110 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -30 -10 10 30 50 70 90 110 130 Relative Forward Voltage ∆VF (V) Relative Forward Voltage Vs Junction Temperature ∆VF = VF -V F(25°C) = f(Tj); IF = 20mA Junction Temperature Tj(°C) Junction Temperature Tj(°C) Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 20mA Relative Luminous Intensity Irel Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF =20mA -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0 10.0 -50 -30 -10 10 30 50 70 90 110 130 ∆Cx ∆Cy -0.030 -0.025 -0.020 -0.015 -0.010 -0.005 0.000 0.005 0.010 0.015 0.020 0.025 0.030 -50 -30 -10 10 30 50 70 90 110 130 Relative Wavelength ∆λdom(nm) Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA ∆Cx, ∆Cy Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA Junction Temperature Tj(°C) Junction Temperature Tj(°C)

SpicePlus 3014 • 80 InGaN White: SEW-BZSG Package Outlines Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating Heat Resistant Polymer Silicone Resin Ag Plating 20/12/2017 V4.0 Note : Primary thermal path is through Cathode lead of LED package. General Tolerances ± 0.10

20/12/2017 V4.0

Reels come in quantity of 3000 units.
Reel diameter is 180 20/12/2017 V4.0

20/12/2017 V4.0 Packaging Specification 25/06/2015 V3.0

80 InGaN White: NUW-KZSG

15/01/2015 V2.0

12 20/12/2017 V4.0 Packaging Specification Average 1pc SpicePlus 3014 1 completed bag (3000pcs) 0.034 190 ± 10Weight (gram) Cardboard Box Dimensions (mm) Empty Box Weight (kg) Super Small Small Medium Large For SpicePlus 3014 Reel / BoxCardboard Box Size Weight (gram) 0.011 200 ± 10 DOMINANT TM Moisture sensitivity level Moisture absorbent material + Moisture indicator The reel, moisture absorbent material and moisture indicator are sealed inside the moisture proof foil bag Reel Barcode label Label (L) Lot No : lotno (P) Part No : partno (C) Cust No : partno (G) Grouping : group (Q) Quantity : quantity (D) D/C : date code (S) S/N : serial no DOMINANT Opto Technologies ML TEMP 2 260˚C RoHS Compliant Made in Malaysia 325 x 225 x 190 325 x 225 x 280 570 x 440 x 230 570 x 440 x 460 0.38 0.54 1.46 1.92 9 reels MAX 15 reels MAX 60 reels MAX 120 reels MAX

Time (sec) 0 50 100 150 200 300 250 225 200 175 150 125 100 275Temperature (˚C) Classification Reflow Profile (JEDEC J-STD-020C) Ramp-up 3˚C/sec max. 255-260˚C 10-30s 60-150s Ramp- down 6˚C/sec max. Preheat 60-180s 480s max 217˚C Recommended Pb-free Soldering Profile 20/12/2017 V4.0

Revision History

All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT Opto Technologies does not assume any liability arising out of the application or use of any product described herein. DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function or design. DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems without the express written approval from the Managing Director of DOMINANT Opto Technologies . Page 1, 8 3, 4 Subjects Initial Release Typo Error on Features Typo Error on Package Outline Update Color Bin Structure Update Features Date of Modification

08 Aug 2016

26 May 2017

20 Sep 2017

20 Dec 2017

14 20/12/2017 V4.0

15 20/12/2017 V4.0 1) Brightness: 1.1 Luminous intensity is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3). 1.2 Luminous flux is measured with an internal reproducibility of ± 8 % and an expanded uncertainty of ± 11 % (according to GUM with a coverage factor of k=3). 2) Color: 2.1 Chromaticity coordinate groups are measured with an internal reproducibility of ± 0.005 and an expanded uncertainty of ± 0.01 (accordingly to GUM with a coverage factor of k=3). 2.2 DOMINANT wavelength is measured with an internal reproducibility of ± 0.5nm and an expanded uncertainty of ± 1nm (accordingly to GUM with a coverage factor of k=3). 3) Voltage: 3.1 Forward Voltage, Vf is measured with an internal reproducibility of ± 0.05V and an expanded uncertainty of ± 0.1V (accordingly to GUM with a coverage factor of k=3).

DOMINANT Opto Technologies is a dynamic company that is amongst the world’s leading automotive LED manu- facturers. With an extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing and development capabilities have become a trusted and reliable brand across the globe. More in- formation about DOMINANT Opto Technologies, a ISO/TS 16949 and ISO 14001 certified company, can be found under http://www.dominant-semi.com. Please contact us for more information: DOMINANT Opto Technologies Sdn. Bhd Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia. Tel: +606 283 3566 Fax: +606 283 0566 E-mail: sales@dominant-semi.com

Product Information

SEW-BZSG specifications and overview.

Summary

SpicePlus 3014

Description

SpicePlus 3014

Source title SEW-BZSG Datasheet(PDF) - DOMINANT Semiconductors

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