SEMD10 INFINEON | Alldatasheet

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Technical content

NPN/PNP Silicon Digital Transistor Array Preliminary data

  • Switching circuit, inverter, interface circuit, driver circuit
  • Two (galvanic) internal isolated NPN/PNP Transistors in one package
  • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation 123 456 Direction of Unreeling Top View Position in tape: pin 1 same of feed hole side W R Marking on SOT666 package (for example W R) corresponds to pin 1 of device EHA07176 6 54 321 C1 B2 E2 C2B1E1 R 2 R 2 TR1 TR2 Type Marking Pin Configuration Package SEMD10 WF 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on Voltage Vi(on) 10 DC collector current IC 100 mA Total power dissipation, TS = 75 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤ 300 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 50 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 50 - - Collector cutoff current VCB = 40 V, IE = 0 ICBO - - 100 nA Emitter cutoff current VEB = 5 V, IC = 0 IEBO - - 164 µA DC current gain 1) IC = 5 mA, VCE = 5 V hFE 70 - - - Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA VCEsat - - 0.3 V Input off voltage IC = 100 µA, VCE = 5 V Vi(off) 0.4 - 0.8 Input on Voltage IC = 2 mA, VCE = 0.3 V Vi(on) 0.5 - 1.1 Input resistor R1 1.5 2.2 2.9 kΩ Resistor ratio R1/R2 0.042 0.047 0.052 - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT - 170 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 2 - pF 1) Pulse test: t < 300µs; D < 2%

DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) 10 -1 10 0 10 1 10 2 mA IC 0 10 1 10 2 10 3 10 hFE Collector-Emitter Saturation Voltage V CEsat = f (IC), hFE = 20 0 0.1 0.2 0.3 V 0.5 VCEsat 0 10 1 10 2 10 mA IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) 10 -1 10 0 10 1 10 2 V Vi(on) -1 10 0 10 1 10 2 10 mA IC Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) Vi(off) -3 10 -2 10 -1 10 0 10 1 10 mA IC

Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 0 0.1 0.2 0.3 V 0.5 VCEsat 0 10 1 10 2 10 mA IC DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) 10 -1 10 0 10 1 10 2 mA IC 0 10 1 10 2 10 3 10 hFE Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) Vi(off) -3 10 -2 10 -1 10 0 10 1 10 mA IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) 10 -1 10 0 10 1 10 2 V Vi(on) -1 10 0 10 1 10 2 10 mA IC

Total power dissipation Ptot = f (TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 mW 300 Ptot Permissible Pulse Load RthJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5