BCR158 INFINEON | Alldatasheet

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Technical content

BCR158.../SEMB10 PNP Silicon Digital Transistor

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
  • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR158/F/L3 BCR158T/W SEMB10 EHA07183 C EB R 2 EHA07173 6 54 321 C1 B2 E2 C2B1E1 R 2 R 2 TR1 TR2 Type Marking Pin Configuration Package BCR158 BCR158L3 BCR158F BCR158T BCR158W SEMB10 WIs WI WIs WIs WIs 1=B 1=B 1=B 1=B 1=B 1=E1 2=E 2=E 2=E 2=E 2=E 2=B1 3=C 3=C 3=C 3=C 3=C 3=C2 4=E2 5=B2 6=C1 SOT23 TSFP-3 TSFP-3 SC75 SOT323 SOT666

BCR158.../SEMB10 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on voltage Vi(on) 10 Collector current IC 100 mA Total power dissipation- BCR158, TS ≤ 102°C BCR158F, TS ≤ 128°C BCR158L3, TS ≤ 135°C BCR158T, TS ≤ 109°C BCR158W, TS ≤ 124°C SEMB10, TS ≤ 75°C Ptot 200 250 250 250 250 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BCR158 BCR158F BCR158L3 BCR158T BCR158W SEMB10 RthJS ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BCR158.../SEMB10 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 50 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 50 - - Collector-base cutoff current VCB = 40 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 5 V, IC = 0 IEBO - - 164 µA DC current gain1) IC = 5 mA, VCE = 5 V hFE 70 - - - Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA VCEsat - - 0.3 V Input off voltage IC = 100 µA, VCE = 5 V Vi(off) 0.4 - 0.8 Input on voltage IC = 2 mA, VCE = 0.3 V Vi(on) 0.5 - 1.1 Input resistor R1 1.5 2.2 2.9 kΩ Resistor ratio R1/R2 0.042 0.047 0.052 - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 3 - pF 1Pulse test: t < 300µs; D < 2%

BCR158.../SEMB10 DC current gain hFE = ƒ(IC) VCE = 5V (common emitter configuration) 10 -1 10 0 10 1 10 2 mA IC 0 10 1 10 2 10 3 10 hFE Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 0 0.1 0.2 0.3 V 0.5 VCEsat 0 10 1 10 2 10 mA IC Input on Voltage Vi(on) = ƒ(IC) VCE = 0.3V (common emitter configuration) 10 -1 10 0 10 1 10 2 V Vi(on) -1 10 0 10 1 10 2 10 mA IC Input off voltage Vi(off) = ƒ(IC) VCE = 5V (common emitter configuration) Vi(off) -3 10 -2 10 -1 10 0 10 1 10 mA IC

BCR158.../SEMB10 Total power dissipation Ptot = ƒ(TS) BCR158 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) BCR158F 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) BCR158L3 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) BCR158T 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot

BCR158.../SEMB10 Total power dissipation Ptot = ƒ(TS) BCR158W 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) SEMB10 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Permissible Pulse Load P totmax/PtotDC = ƒ(tp) BCR158 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load RthJS = ƒ(tp) BCR158 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

BCR158.../SEMB10 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR158F 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BCR158F 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 K/WRthJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Puls Load RthJS = ƒ (tp) BCR158L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR158L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BCR158.../SEMB10 Permissible Puls Load RthJS = ƒ (tp) BCR158T 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR158T 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BCR158W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR158W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BCR158.../SEMB10 Permissible Puls Load RthJS = ƒ (tp) SEMB10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) SEMB10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5