SDU30N03L SAMHOP | Alldatasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 and TO-251 Package. ABSOLUTE MAXIMUM RATINGS (T C =25 C unless otherwise noted) SamHop Microelectronics Corp. PRODUCT SUMMARY VDSS ID R DS(ON) (mW ) TYP 30V 30A 11.5 @ VGS = 10V

FEATURES

Super high dense cell design for low RDS(ON ). Rugged and reliable. S G D SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) G G S S D D SDU/D30N03L THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC 3 50R JA /WC /WC Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS V -Pulsed 30ID A 90IDM A Drain-Source Diode Forward Current 30 IS A Maximum Power Dissipation PD W Operating and StorageTemperature Range TJ, TSTG -55 to 175 C @Tc=25 C Derate above 25 C

0.3 W/ C

Drain Current-Continuous @TJ=125 C a JULY, 2002 17 @ VGS = 4.5V

ELECTRICAL CHARACTERISTICS (T C =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS = 0V, ID = 250uA 30 V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 10 Gate-Body Leakage IGSS VGS = +/-20V, VDS = 0V nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA 1 1.5 11.5 3 V Drain-Source On-State Resistance R DS(ON) VGS = 10V, ID =15A VGS = 4.5V, ID = 12A On-State Drain Current ID(ON) VDS = 10V, VGS = 10V 40 A SForward Transconductance FSg VDS = 10V, ID = 20A DYNAMIC CHARACTERISTICS b Input Capacitance C ISS C RSS C OSSOutput Capacitance Reverse Transfer Capacitance VDD =15V, VGS = 0V f = 1.0MHZ PF PF PF SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tfFall time VDD = 15V, ID =1A, VGS = 10V, R GEN = 6 ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS = 15V, ID = 15A, VGS =10V nC nC nC 34.4 5.1 7.7 1200 530 150 m ohm m ohm ohm +/-100 uA