SDU20N03L SAMHOP | Alldatasheet

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N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-252 and TO-251 Package. ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) SamHop Microelectronics Corp. July 2004 ver1.2 PRODUCT SUMMARY VDSS ID RDS(ON) ( m W ) 30V 35A 15 @ VGS = 10V 32 @ VGS = 4.5V

FEATURES

Super high dense cell design for low RDS(ON). Rugged and reliable. S G D SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) G G S S D D SDU/D20N03L THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC 3 50R JA /WC /WC Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage 20VGS V -Pulsed 35ID A 87IDM A Drain-Source Diode Forward Current 20IS A Maximum Power Dissipation PD W Operating and Storage Temperature Range TJ, TSTG -55 to 175 C @Tc=25 C 50 Drain Current-Continuous @TJ=125 C a Max

E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S VG S = 0V, ID = 250uA 30 V Zero G ate Voltage Drain C urrent IDS S VDS = 24V, VG S = 0V 10 uA G ate-B ody Leakage IG S S V G S = 20V, V DS = 0V nA ON C HAR AC T E R IS T IC S a G ate T hreshold Voltage V G S (th) V DS = V G S , ID = 250uA 1 1.5 13.5 3 V Drain-S ource On-S tate R esistance R DS (ON) V G S = 10V, ID =10A V G S = 4.5V, ID = 8A On-S tate Drain C urrent ID(ON) V DS = 10V, V G S = 10V 55 A SF orward Transconductance F Sg V DS = 10V, ID = 20A DY NAMIC C HAR AC T E R IS T IC S b Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DD =15V, V G S = 0V f = 1.0MHZ 930 400 120 26.5 4.8 5.4 P F P F P F S WIT C HING C HAR AC T E R IS T IC S b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tfF all time V DD = 15V ID =1A V G S = 10V V G E N = 6 ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS = 15V, ID = 20A V G S =10V nC nC nC 100 m ohm m ohm ohm nC V DS = 15V,ID = 20A,V G S =10V V DS = 15V,ID = 20A,V G S =4.5V 13.5

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is = 20A 1.3 V a Notes b.G uaranteed by design, not subject to production testing. a.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and TemperatureF igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A) C , C apacitance (pF ) Drain-S ource, On-R esistance ID, Drain C urrent (A) ID, Drain C urrent (A) R DS (ON), Normalized S DU/D20N03L 0 5 10 15 20 25 30 2400 2000 1600 1200 800 400 0 1 2 3 4 5 6 -55 C 25 C 0 1 2 3 4 5 6 T j=125 C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 25 C T j=125 C -55 C 0 10 20 30 40 V G S =10V V G S =3V C iss C oss C rss

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 0.1 1.0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA 0 5 10 15 20 V DS =10V 0 4 8 12 16 20 24 28 32 V DS =15V ID=20A 100 0.1 0.1 1 10 30 60 V G S =10V S ingle P uls e T c=25 C RDS(ON) Limit DC 100ms 10ms 1ms

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective S DU/D20N03L INV E R T E D 0.1 0.01 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R θJ A (t)=r (t) * R θJ A 2. R θJ A=S ee Datasheet 3. T J M-T A = P DM* R θJ A (t) 4. Duty C ycle, D=t1/t2 S ING LE P ULS E V DD R D V V R S V G G S IN G E N OUT L

84 0.94 3 3 4 5 9 3 9 1 6.00 0 36 4 9.70 1 82 398 1.425 1.625 56 0.064 0.650 0.850 6 33 L2 0.600 0.024REF. REF. 2.29 BSC 0.090 BSC S DU/D20N03L

UNIT:㎜ PACKAGE TO-252 (16 ㎜) A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1 ψ2 ψ1.5 + 0.1 - 0 16.0 0.3± 1.75 0.1± 7.5 ±0.15 8.0 ±0.1 4.0 ±0.1 2.0 ±0.15 0.3 ±0.05 UNIT:㎜ TAPE SIZE 16 ㎜ REEL SIZE ψ 330 M N W T H K S G R V ψ330 ± 0.5 ψ97 ± 1.0 17.0 + 1.5 - 0 2.2 ψ13.0 + 0.5 - 0.2 10.6 2.0 ±0.5 S S DU/D20N03L " A" TO-251 Tube