SDS9906

SDS9906 SAMHOP | Alldatasheet

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N-C hannel E nhancement Mode F ield E ffect T ransistor J UL. 30 2004 v1.1 AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S V Drain C urrent-C ontinuous @ T J =125 C -P ulsed ID 3.1 A A A W IDM 12 Drain-S ource Diode F orward C urrent IS 1.25 Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient R thJ A 100 /WC 1. 25 a a a a b G D S S OT-23 S G D S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m Ω ) Max 20V 3.1A 60 @ V G S = 4V 85 @ V G S =2.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT -23 package. S DS 9906

E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 20 V Zero G ate Voltage Drain C urrent IDS S V DS 16V, V G S 0V= = 1 uA G ate-B ody Leakage IG S S V G S 8V,V DS 0V= = 100 nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 0.6 V Drain-S ource On-S tate R esistance R DS (ON) c C m ohm V G S 4.0V, ID 2.8A= = 60 F S c

5 SF orward Transconductance g V DS 7V, ID 5A

DY NAMIC C HAR AC T E R IS T IC S Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =10V, V G S = 0V f =1.0MHZ P F P F P F S WIT C HING C HAR AC T E R IS T IC S Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 10V, ID = 1A, V G E N = 4.5V, R L = 10 ohm R G E N = 10 ohm ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =10V, ID = 1A, V G S =4.5V 9.2 nC nC nC 1.6 2.6 F all T ime = = 608 114 V G S 2.5V, ID 2.0A= = 85 1.5 0.8

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =1.25A 0.84 1.3 V b C Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A)C , C apacitance (pF ) a.S urface Mounted on F R 4 B oard, t 10sec. 0 5 10 15 20 25 30 C iss C oss 1100 880 660 440 220 0 1 2 3 4 5 6 V G S =2V C rss F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Temperature V G S , G ate-to-S ource Voltage (V ) On-R esistance(Ohms) ID, Drain C urrent (A)R DS (ON),

25 C25

0.0 0.5 1 1.5 2 2.5 3 -55 C T j=125 C 2.2 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 125 T j( C ) -25 25 75 V G S =4V ID=3A V G S =3V

gF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) Is , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) ID, Drain C urrent (A) 0 2 4 6 8 10 12 14 16 V DS =10V ID=1A T J =25 C S DS 9906 0 5 10 15 20 25 V DS =7V F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltage B V DS S , Normalized Drain-S ource B reakdown V oltage T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1 1 0.1 0.03 0.1 1 10 20 50 RDS(ON) Limit 10ms100ms DC V G S =4.5V S ingle P uls e T c=25 C

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H INV E R T E D V DD R D V V R S V G G S IN G E N OUT L S DS 9906 0.01 0.1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance Single Pulse on P DM 1. R thJ A (t)=r (t) * R J A 2. R J A=S ee Datasheet 3. T J M-T A = P DM* R J A (t) 4. Duty C ycle, D=t1/t2 th th th 0.01 0.02 0.5 0.2 0.1 0.05

J 2.70 2.40 1.40 0.35 0.45 1.90 REF. 1.00 0.10 3.10 2.80 1.60 0.50 0.10 0.55 1.30 0.20 0.106 0.094 0.055 0.014 0.018 0.039 0.004 0.122 0.110 0.063 0.020 0.004 0.022 0.051 0.008 0.40 0.45 1.15 0.016 0.033 0.045 S DS 9906 G A F CB L D (TYP.) E H M I F G I J L M 0.075 REF. - - 0° 10° 0° 10°

3.20 ±0.10 3.00 ±0.10 1.33 ±0.10 ∮1.00 +0.25 ∮1.50 +0.10 8.00 +0.30 -0.10 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 4.00 ±0.10 2.00 ±0.05 0.20 ±0.02 ∮178 ∮178 ∮60 9.00 ±0.5 12.00 ±0.5 ∮13.5 ±0.5 2.00 ±0.5 ∮10.0 18.005.008㎜ V UNIT:㎜ RGSKHW1WNM 10.5 REEL SIZETAPE SIZE UNIT:㎜ PACKAGE SOT-23 A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T