SDP85N03L SAMHOP | Alldatasheet

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N-C hannel Logic Level E nhancement Mode F ield E ffect T ransistor AB S OLUT E MAXIMUM R AT ING S (T C =25 C unless otherwise noted) T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-C ase T hermal R esistance, J unction-to-Ambient R J C R J A 62.5 /WC /WC P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S 20 V -P ulsed ID 83 A IDM 249 A Drain-S ource Diode F orward C urrent IS 75 A Maximum P ower Dissipation P D W Operating and S torage Temperature R ange T J , T S T G -65 to 175 C @ T c=25 C 75 Drain C urrent-C ontinuous @ T J =125 C a S G D S DB S E R IE S T O-263(DD-P AK ) G S D S DP S E R IE S T O-220 S D G P R ODUC T S UMMAR Y V DS S ID R DS (on) ( m W ) Max 30V 83A 5 @ V G S = 10V 7.5 @ V G S = 4.5V S DP /B 85N03L F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & T O-263 package. S amHop Microelectronics C orp. May,2004 ver1.1

E LE C T R IC AL C HAR AC T E R IS T IC S (T C 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 30 V Zero G ate Voltage Drain C urrent IDS S V DS 24V, V G S 0V= = 10 uA G ate-B ody Leakage IG S S V G S 16V, V DS 0V = = nA ON C HAR AC T E R IS T IC S a G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 1 3 V Drain-S ource On-S tate R esistance R DS (ON) VGS = 10V, ID = 37.5A 4 VG S = 4.5V, ID = 30A 7.5 On-S tate Drain C urrent ID(ON) V G S = 10V, V DS = 10V 75 A SF orward Transconductance F Sg V DS = 10V, ID = 37A DY NAMIC C HAR AC T E R IS T IC S b Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =15V, V G S = 0V f =1.0MHZ

3800 P F

1750 P F

S WIT C HING C HAR AC T E R IS T IC S b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 15V, ID = 1A, V G S = 10V V G E N = 60 55 ns ns ns ns 268 233 Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =15V, ID = 85A, V G S =10V nC nC nC F all T ime S DP /B 85N03L 1.5 5.5 363 95.2 7.2 5.6 100 m ohm m ohm ohm V DS =15V, ID =85A,V G S =10V V DS =15V, ID =85A,V G S =4.5V nC

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =37.5A 0.9 1.3 V a Notes b.G uaranteed by design, not subject to production testing. a.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A)C , C apacitance (pF ) ID, Drain C urrent (A) 12000 10000 8000 6000 4000 2000 0 105 15 2520 30 S DP /B 85N03L 100 120 V G S =3V C iss C ossC rss T j( C ) 2.2 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 125-25 25 75 V G S =10V ID=37.5A 1 2 3 4 5 6 25 C T J =125 C -55 C F igure 4. On-R esistance Variation withTemperature Drain-S ource On-R esistance R DS (ON), Normalized

F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) F igure 5. G ate T hres hold V ariation V DS =48V ID=75A 0.1 0 10 20 30 40 V DS =10V 0 12 24 36 48 60 72 84 96 V DS =15V ID=85A 200 100 300 0.5 10.1 10 30 60 V G S =10V S ingle P uls e T c=25 C RDS(ON)Limit DC 100ms 10ms 1ms 100μs S DP /B 85N03L 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H INV E R T E D T ransient T hermal Impedance 0.1 0.01 0.01 0.1 1 10 100 1000 10000 P DM S quare Wave P ulse Duration (msec) F igure 13. Normalized T hermal T ransient Impedance C urve 1. R θJ C (t)=r (t) * R θJ C 2. R θJ C =S ee Datasheet 3. T J M-T C = P * R θJ C (t) 4. Duty C ycle, D=t1/t2 r(t),Normalized E ffective D=0.5 0.2 0.1 0.05 0.02 0.01 S ingle P ulse V DD R D V V R S V G G S IN G E N OUT L S DP /B 85N03L