SDM9926 SAMHOP | Alldatasheet

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Dual N-C hannel E nhancement Mode F ield E ffect T ransistor S urface Mount P ackage. AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S 10 V Drain C urrent-C ontinuous @ T J =25 C -P ulsed ID 5 1.7 A A A W IDM Drain-S ource Diode F orward C urrent IS Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient R J A 62.5 /WC a a a a b S amHop Microelectronics C orp. Apr,27 2005 ver1.2 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max 20V 5 A F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. 1 2 3 4 8 7 6 5 S 1 G 1 S 2 G 2 D1 D1 D2 D2 S O-8 30 @ V G S = 4.0V S DM9926 40 @ V G S = 2.5V

E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 20 V Zero G ate Voltage Drain C urrent IDS S V DS 16V, V G S 0V= = 1 uA G ate-B ody Leakage IG S S V G S 10V,V DS 0V= = 100 nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 0.6 V Drain-S ource On-S tate R esistance R DS (ON) C m ohmV G S 4.0V, ID 5A= = 30 11 SF orward Transconductance F Sg VDS 5.0V, ID 6.0A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =8V, V G S = 0V f =1.0MHZ P F P F P F S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 10V, ID = 1A, V G E N = 4.5V, R L = 10 ohm R G E N = 10 ohm ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =10V, ID = 1A, V G S =4.5V 14 nC nC nC 2.5 F all T ime = = 150 910 190 V G S 2.5V, ID 5A= = m ohm40

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =1.7A 0.72 1.2 V b C Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Temperature F igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A)C , C apacitance (pF ) On-R esistance(Ohms) ID, Drain C urrent (A) a.S urface Mounted on F R 4 B oard, t 10sec. R DS (ON), 0 2 4 6 8 10 12 C iss C oss 2500 2000 1500 1000 500 0 1 2 3 4 5 6 V G S =1.5V 25 C 0.0 0.5 1 1.5 2 2.5 3 T j=125 C 2.2 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 125 T j( C ) -25 25 75 V G S =4V ID=6A C rss -55 C

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 0 3 6 9 12 15 V DS =5V 0 2 4 6 8 10 12 14 16 V DS =10V ID=1A T J =25 C 1 1 0.1 0.03 0.1 1 10 20 50 RDS(ON) Limit 10ms100ms DC V G S =4.5V S ingle P uls e T c=25 C -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA S DM9926

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance 0.1 0.01 S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective INV E R T E D Duty C ycle=0.5 0.2 0.1 0.05 0.02 S ingle P ulse 1 10 100 P DM 1. R thJ A (t)=r (t) * R J A 2. R J A=S ee Datasheet 3. T J M-T A = P DM* R J A (t) 4. Duty C ycle, D=t1/t2 V DD R D V V R S V G G S IN G E N OUT L th th th S DM9926

PAC K AG E OUT LINE DIME NS IONS S O-8 S Y MB OLS MIN MIN 0.053 0.004 0.189 0.150 0.228 0.016 1.35 0.10 4.80 3.81 5.79 0.41 MAX MAX 0.069 0.010 0.196 0.157 0.244 0.050 1.75 0.25 4.98 3.99 6.20 1.27 MILLIME T E R S INC HE S A D E H L e B H E L A C D 0.05 TYP. 0.016 TYP. 0.008 TYP. 0.015X45° S DM9926

unit:㎜ PACKAGE SOP 8N 150㏕ A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.40 5.20 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 8.0 4.0 2.0 ±0.05 0.3 ±0.05 UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M N W W1 H K S G R V 330 ± 1 ±1.5 12.4 + 0.2 16.8 - 0.4 ψ12.75 + 0.15 2.0 ±0.15 S DM9926

S E NS IT IV E DE V IC E S S DM9926