SDM9410

SDM9410 SAMHOP | Alldatasheet

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N-C hannel E nhancement Mode F ield E ffect T ransistor S urface Mount P ackage. AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S 20 V Drain C urrent-C ontinuous @ T J =125 C -P ulsed ID 7 2.8 2.5 A A A W IDM Drain-S ource Diode F orward C urrent IS Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient R J A 50 /WC a a a a b (300ms P ulse Width) S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) MAX 30V 7A 30 @ V G S = 10V 50 @ V G S = 4.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S O-8 P R E LIMINAR Y S DM9410

E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 30 V Zero G ate Voltage Drain C urrent IDS S V DS 24V, V G S 0V= = 1 uA G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 1 V Drain-S ource On-S tate R esistance R DS (ON) V G S 10V, ID 7A 30 V G S 4.5V ,ID 3.5A 50 On-S tate Drain C urrent ID(ON) V DS = 5V, V G S = 10V 30 A SF orward Transconductance F Sg V DS 5V, ID 7A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =15V, V G S = 0V f =1.0MHZ P F P F P F S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 15V, ID = 1A, V G S = 10V, R G E N = 10 ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =15V, ID = 1A, V G S =10V nC nC nC C F all T ime = = 510 235 115 2.3 100 m ohm m ohm ohm nC V DS =15V, ID =1A,V G S =10V V DS =15V, ID =1A,V G S =4.5V 106.5 230 1.8 3

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =5.3A 0.76 1.1 V b C Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and TemperatureF igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A) ID, Drain C urrent(A)C , C apacitance (pF ) On-R esistance(Ohms) ID, Drain C urrent (A) a.S urface Mounted on F R 4 B oard, t 10sec. R DS (ON), 0 0.5 1 1.5 2 2.5 3 V G S =3V -55 C 25 C T j=125 C T j=125 C 25 C -55 C 0.030 0.025 0.020 0.015 0.010 0.005 0 5 10 15 20 V G S =10V 1200 1000 800 600 400 200 0 5 10 15 20 25 30 C iss C oss C rss

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 40.0 10.0 1.0 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=-250uA 0 5 10 15 20 V DS =15V 1 1 0.1 0.03 0.1 1 10 30 50 RDS(ON) Limit 10ms 100ms DC V G S =10V S ingle P uls e T A=25 C 0 2 4 6 8 10 12 14 16 V DS =15V ID=1A S DM9410

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms V DD R D V V R S V G G S IN G E N OUT L t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance 0.1 0.01 S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective INV E R T E D Duty C ycle=0.5 0.2 0.1 0.05 0.02 S ingle P ulse 1 10 100 P DM 1. R qJ A (t)=r (t) * R qJ A 2. R qJ A=S ee Datasheet 3. T J M-T A = P DM* R qJ A (t) 4. Duty C ycle, D=t1/t2 S DM9410