SDM8958

SDM8958 SAMHOP | Alldatasheet

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Dual E nhancement Mode F ield E ffect T ransistor ( N and P C hannel) P R E LIMINAR Y AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) P arameter S ymbol N-C hannel P -C hannel Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S V Drain C urrent-C ontinuous @ T J =125 C -P ulsed ID 2.0 A A A W IDM Drain-S ource Diode F orward C urrent IS Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient R qJ A 62.5 /WC a a a a b 7.0 1.7 -30 -5.0 -20 -1.7 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) 30V 7A 32 @ V G S = 10V 50 @ V G S = 4.5V S O-8 1 2 3 4 8 7 6 5 S 1 G 1 S 2 G 2 D1 D1 D2 D2 (N-C hannel) P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) -30V -5A 52 @ V G S = -10V 90 @ V G S = -5V (P -C hannel) S amHop Microelectronics C orp. MAX MAX 20 20 S DM8958

P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 30 V Zero G ate Voltage Drain C urrent IDS S V DS 24V, V G S 0V= = 1 uA G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 1 1.8 V Drain-S ource On-S tate R esistance R DS (ON) V G S 10V, ID 6.0A V G S 4.5V ,ID 5.0A On-S tate Drain C urrent ID(ON) V DS = 5V, V G S = 10V 30 A SF orward Transconductance F Sg V DS 5V, ID 6.0A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =15V, V G S = 0V f =1.0MHZ

510 P F

235 P F

S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 15V, ID = 1A, V G E N = 10V, R L = 15 W R G E N = 10 W 21 40 ns ns ns ns 20 40 27 55 115 230 Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =15V, ID = 1A, V G S =10V 13 nC nC nC 2.1 C F all T ime = = N-C hannel E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted) m ohm m ohm 100 20V DS =15V, ID = 1A,V G S =10V nC V DS =15V, ID = 1A,V G S =4.5V 10

P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID -250uA= -30 V Zero G ate Voltage Drain C urrent IDS S V DS -24V, V G S 0V= = -1 G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = nA G ate T hreshold Voltage V G S (th) V DS V G S , ID = -250uA= -1 -1.7 -3 V Drain-S ource On-S tate R esistance R DS (ON) V G S -10V, ID -4.5A 52 V G S -5V , ID -4A 90 On-S tate Drain C urrent ID(ON) V DS = -5V, V G S = -10V -20 A SF orward Transconductance F Sg V DS -5V, ID - 4.5A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =-15V, V G S = 0V f =1.0MHZ

860 P F

470 P F

S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V D = -15V, R L = 15 ID = -1A, V G E N = -10V, R G E N = 10 W 9 20 ns ns ns ns 10 40 37 90 23 110 Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =-15V, ID = - 5.3A, V G S =-10V 15 nC nC nC3 C F all T ime = = W ON C HAR AC T E R IS T IC S b uA 100 m ohm m ohm P-C hannel E LE C TR IC AL C HAR AC TE R IS TIC S (TA 25 C unless otherwise noted) nC V DS =-15V,ID=-5.3A,V G S =-10V V DS =-15V,ID=-5.3A,V G S =-4.5V 10.58.7

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =1.7A N-C h 0.77 1.2 -0.82 -1.2V G S = 0V, Is =-1.7A P -C h V b C Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.＜ ＜ a.S urface Mounted on F R 4 B oard, t 10sec.＜ N-C hannel F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and TemperatureF igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A) ID, Drain C urrent(A)C , C apacitance (pF ) On-R esistance(Ohms) ID, Drain C urrent (A)R DS (ON), -55 C 25 C T j=125 C T j=125 C 25 C -55 C 0.030 0.025 0.020 0.015 0.010 0.005 0 5 10 15 20 V G S =10V 0 0.5 1 1.5 2 2.5 3 V G S =3V 1200 1000 800 600 400 200 0 5 10 15 20 25 30 C iss C oss C rss

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) 40.0 10.0 1.0 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=-250uA 0 5 10 15 20 V DS =15V S DM8958 N-C hannel

F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 3. C apacitance -V DS , Drain-to S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )-V DS , Drain-to-S ource Voltage (V ) C , C apacitance (pF ) -ID, Drain C urrent (A) -ID, Drain C urrent (A) 25 C 0 0.5 1 1.5 2 2.5 3 -55 C T j=125 C F igure 4. On-R esistance Variation with Temperature On-R esistance(Ohms) R DS (ON), 1.8 1.6 1.2 0.8 1.4 1.0 0.6 -50 0 50 100 150 V G S =-10V T j, J unction T emperature ( C ) ID=-5.3A (Normalized) 0 5 10 15 20 25 30 C iss C oss C rss 3000 2500 2000 1500 1000 500 P -C hannel

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S ) B V DS S , Normalized Drain-S ource B reakdown V oltage-Is , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent -IDS , Drain-S ource C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent -V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) 1.09 1.06 1.03 1.00 0.94 0.97 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=-250uA 0 5 10 15 20 V DS =-15V 20.0 10.0 1.0 V G S =0V S DM8958 P -C hannel

Q g, T otal G ate C harge (nC ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area P -C hannel V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) V G S , G ate to S ource V oltage (V ) 10 0 3 6 9 12 15 18 21 24 V DS =-15V ID=-4.5A V G S , G ate to S ource V oltage (V ) ID, Drain C urrent (A) 0 2 4 6 8 10 12 14 16 V DS =15V ID=9A 1 1 0.1 0.03 0.1 1 10 30 50 RDS(ON) Limit 10ms 100ms DC V G S =10V S ingle P uls e T A=25 C F igure 10. Maximum S afe O perating Area -V DS , Drain-S ource V oltage (V ) -ID, Drain C urrent (A) 0.1 0.03 0.1 1 10 30 50 V G S =-10V S ingle P uls e T A=25 C RDS(ON) Limit 10ms100ms DC S DM8958

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance 0.1 0.01 S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective INV E R T E D Duty C ycle=0.5 0.2 0.1 0.05 0.02 S ingle P ulse 1 10 100 P DM 1. R θJ A (t)=r (t) * R θJ A 2. R θJ A=S ee Datasheet 3. T J M-T A = P DM* R θJ A (t) 4. Duty C ycle, D=t1/t2 V DD R D V V R S V G G S IN G E N OUT L S DM8958