SDM8401

SDM8401 SAMHOP | Alldatasheet

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Dual E nhancement Mode F ield E ffect T ransistor ( N and P C hannel) August , 2002 AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) P arameter S ymbol N-C hannel P -C hannel Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S V Drain C urrent-C ontinuous @ T J =125 C -P ulsed ID 2.0 A A A W IDM Drain-S ource Diode F orward C urrent IS Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient 62.5 /WC a a a a b 1.7 -30 4.5 -1.7 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) T Y P 30V 6A 18.5 @ V G S = 10V 25 @ V G S = 4.5V S O-8 1 2 3 4 8 7 6 5 S 1 G 1 S 2 G 2 D1 D1 D2 D2 (N-C hannel) P R ODUC T S UMMAR Y V DS S ID -30V -4.5A 38.5 @ V G S = -10V 57.5 @ V G S = -4.5V (P -C hannel) S amHop Microelectronics C orp. 20 20 6.0 18.0 15 R J A S DM8401 R DS (ON) ( m W ) T Y P

P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 30 V Zero G ate Voltage Drain C urrent IDS S V DS 24V, V G S 0V= = 1 G ate-B ody Leakage IG S S V G S 16V, V DS 0V= = 100 nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 1 3 V Drain-S ource On-S tate R esistance R DS (ON) V G S 10V, ID 9A 21 V G S 4.5V, ID 7A 32 On-S tate Drain C urrent ID(ON) V DS = 10V, V G S = 10V 40 A SF orward Transconductance F Sg V DS 10V, ID 20A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =15V, V G S = 0V f =1.0MHZ P F P F P F S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 15V, ID = 1A, V G S = 10V, R G E N = 6 ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =15V, ID = 9A, V G S =10V nC nC nC C F all T ime = = 18.5 1.5 950 420 110 4.8 25.2 5.12 uA m ohm m ohm N-C hannel E L E C TR IC AL C HAR AC TE R IS TIC S (TA 25 C unles s otherwis e noted) V DS =15V, ID =9A,V G S =10V nC V DS =15V, ID =9A,V G S =4.5V 14.612.1

P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID -250uA= -30 V Zero G ate Voltage Drain C urrent IDS S V DS -24V, V G S 0V= = -1 G ate-B ody Leakage IG S S V G S 20V, V DS 0V= = nA G ate T hreshold Voltage V G S (th) V DS V G S , ID = -250uA= -1 -1.5 -3 V Drain-S ource On-S tate R esistance R DS (ON) VG S -10V, ID -4.5A 53 VGS -4.5V, ID -3.6A 57.5 95 On-S tate Drain C urrent ID(ON) V DS = -5V, V G S = -10V -20 105 A SF orward Transconductance F Sg V DS -15V, ID - 4.5A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =-15V, V G S = 0V f =1.0MHZ

860 P F

457 P F

S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V D = -15V, R L = 15 ID = -1A, V G E N = -10V, R G E N = 6 9 20 ns ns ns ns 10 40 37 90 23 110 Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =-15V, ID = - 4.9A, V G S =-10V 15 nC nC nC3 C F all T ime = = ON C HAR AC T E R IS T IC S b 38.5 m A 100 m ohm m ohm P-C hannel E L E C TR IC AL C HAR AC TE R IS TIC S (TA 25 C unles s otherwis e noted) nC V DS =-15V,ID=-4.9A,V G S =-10V V DS =-15V,ID=-4.9A,V G S =-4.5V 108

F i g u r e 1 . O u t p u t C h a r a c t e r i s t i c s F i g u r e 2 . T r a n s f e r C h a r a c t e r i s t i c s F i g u r e 4 . O n - R e s i s t a n c e V a r i a t i o n w i t h D r a i n C u r r e n t a n d T e m p e r a t u r eF i g u r e 3 . C a p a c i t a n c e V D S , D r a i n - t o S o u r c e V o l t a g e ( V ) V G S , G a t e - t o - S o u r c e V o l t a g e ( V )V D S , D r a i n - t o - S o u r c e V o l t a g e ( V ) ID, D r a i n C u r r e n t ( A ) ID, D r a i n C u r r e n t ( A )C , C a p a c i t a n c e ( p F ) O n - R e s i s t a n c e ( O h m s ) ID, D r a i n C u r r e n t ( A ) R DS (ON), 2 5 2 0 1 5 1 0 0 0 . 5 1 1 . 5 2 2 . 5 3 V G S =4V -55 C 25 C 2 5 2 0 1 5 1 0 T j=125 C T j=125 C 25 C -55 C 0 . 0 3 0 0 . 0 2 5 0 . 0 2 0 0 . 0 1 5 0 . 0 1 0 0 . 0 0 5 0 5 1 0 1 5 2 0 V G S =10V 3 0 0 0 2 5 0 0 2 0 0 0 1 5 0 0 1 0 0 0 5 0 0 0 5 1 0 1 5 2 0 2 5 3 0 C iss C oss C rss S DM8401 P a r a m e t e r S y m b o l C o n d i t i o n M i n T y p M a x U n i t E L E C T R I C A L C H A R A C T E R I S T I C S ( T A = 2 5 C u n l e s s o t h e r w i s e n o t e d ) D R A I N - S O U R C E D I O D E C H A R A C T E R I S T I C S D i o d e F o r w a r d V o l t a g e V S D V G S = 0 V , I s = 1 . 7 A N - C h 0 . 7 7 1 . 2 - 0 . 8 0 - 1 . 2V G S = 0 V , I s = - 1 . 7 A P - C h V b C N o t e s c . G u a r a n t e e d b y d e s i g n , n o t s u b j e c t t o p r o d u c t i o n t e s t i n g . b . P u l s e T e s t : P u l s e W i d t h 3 0 0 μ s , D u t y C y c l e 2 % .＜ ＜ a . S u r f a c e M o u n t e d o n F R 4 B o a r d , t 1 0 s e c .＜ N-C hannel

F igur e 5. G ate T hr eshold V ar iation with T emper atur e F igur e 6. B r eak down V oltage V ar iation with T emper atur e V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) with Dr ain C ur r ent IDS , Drain-S ource C urrent (A) F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) 40.0 10.0 1.0 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS=V GS I D=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 I D=-250uA 0 5 10 15 20 V DS=15V S DM8401 N-C hannel

F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics F igure 3. C apacitance -V DS , Drain-to S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )-V DS , Drain-to-S ource Voltage (V ) C , C apacitance (pF ) -ID, Drain C urrent (A) -ID, Drain C urrent (A) 0 5 10 15 20 25 30 C iss C oss C rss 1500 1250 1000 750 500 250 -V G S =10,9,8,7V 25 C 0 0.5 1 1.5 2 2.5 3 -55 C T j=125 C F igure 4. On-R esistance Var iation with Temper ature On-R esistance(Ohms) R DS (ON), 1.8 1.6 1.2 0.8 1.4 1.0 0.6 -50 0 50 100 150 V G S =-10V T j, J unction T emperature ( C ) ID=-4.9A (Normalized)

-25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 I D=250μA with T emper atur e V th, Normalized G ate-S ource T hres hold V oltage T j, J unction T emperature ( C ) 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS=V GS I D=-250uA with T emper atur e B V DS S , Normalized Drain-S ource B reakdown V oltage T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation F igur e 6. B r eak down V oltage V ar iation gF S , T rans conductance (S ) -Is , S ource-drain current (A) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent -IDS , Drain-S ource C urrent (A) F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent -V S D, B ody Diode F orward V oltage (V ) 0 5 10 15 20 V DS=-15V 20.0 10.0 1.0 V GS=0V

Q g, T otal G ate C harge (nC ) F igur e 9. G ate C har ge F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea F igur e 10. M aximum Safe O per ating A r ea P-C hannel -V DS , B ody Diode F orward V oltage (V )Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) V G S , G ate to S ource V oltage (V ) -ID, Drain C urrent (A) 0 3 6 9 12 15 18 21 24 V DS=-15V I D=-4.5A 1 1 0.1 0.03 0.1 1 10 50 RDS(ON) Limit 10ms 100ms DC V G S =-10V S ingle P uls e T A=25 C V G S , G ate to S ource V oltage (V ) ID, Drain C urrent (A) 0 4 8 12 16 20 24 28 32 V DS=15V I D=9A 1 1 0.1 0.03 0.1 1 10 30 50 RDS(ON) Limit 10ms 100ms DC V G S =10V S ingle P uls e T A=25 C

F igur e 11. Switching T est C ir cuit F igur e 12. Switching W avefor ms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance 0.1 0.01 S quare Wave P ulse Duration (sec) F igur e 13. Nor malized T her mal T r ansient I mpedance C ur ve r(t),Normalized E ffective INV E R T E D Duty C ycle=0.5 0.2 0.1 0.05 0.02 S ingle P ulse 1 10 100 P DM 1. R θJ A (t)=r (t) * R θJ A 2. R θJ A=S ee Datasheet 3. T J M-T A = P DM* R θJ A (t) 4. Duty C ycle, D=t1/t2 V DD R D V V R S V G G S IN G E N OUT L S DM8401