WT4410M WEITRON | Alldatasheet

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http://www.weitron.com.tw WT4410M Rating Symbol Value Unite VDS VGS ID IDM PD R JA Operating Junction and Storage Temperature Range TJ,Tstg IS -55 to 150 C A V V A A W C/W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T =125 C) Pulsed Drain Current Drain-Source Diode Forward Current Power Dissipation Maximax Junction-to-Ambient Maximum Ratings (TA=25 C Unless Otherwise Specified) Device Marking WT4410M=SDM4410 Surface Mount N-Channel D 8765 1234 DDD SSSG SO-8 Features: *Super high dense cell design for low RDS(ON) *Rugged and Reliable *SO-8 Package R <11 m @V =10VΩ 2.5 2.3 Enhancement Mode MOSFET DS(ON) GS R <15 m @V =4.5VΩDS(ON) GS J (2) (1) (1) (1) θ 1/6 01-Jul-05 Lead(Pb)-Free Pb DRAIN CURRENT

10 AMPERES

30 VOLTAGE

http://www.weitron.com.tw WT4410M Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Total Gate Charge VDS=10V, ID=10A, V =10V Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current VDS=0V, VGS= 16V Drain-Source On-Resistance VGS=10V, ID=10A On-State Drain Current VDS=10V, VGS=10A Forward Transconductance VDS=10V, ID=20A Static Dynamic Switching (3) Characteristic Symbol UnitMin Typ Max V(BR)DSS VGS (th) rDS (on) VSD IGSS IDSS ID(on) gfs Ciss Coss Crss td(on) td(off ) Qg Qgs Qgd 30 - V 1 1.5 3 V - -- - - 1 100 nA mW uA A S 13.5 1375 670 200 FP 132 8.2 5.3 0.76 1.1 nS nS nS nS nc nc nc V Electrical Characteristics (TA=25 C Unless otherwise noted) Zero Gate Voltage Drain Current VDS=24V, VGS=0V - - - Turn-On Delay Time Turn-Off Time (2) (3) + + - - Rise Time t tFall Time f r Note: 2. Pulse Test : PW 300us, Duty Cycle 2%. 1. Surface Mounted on FR4 Board t 10sec. 3. Guaranteed by Design, not Subject to Production Testing. VGS=4.5V, ID=5A GEN=10V,V =15V, I =-1A, R =6W DD DVGS GEN=10V,V =15V, I =-1A, R =6W DD DVGS GEN=10V,V =15V, I =-1A, R =6W DD DVGS GEN=10V,V =15V, I =-1A, R =6W DD DVGS GS GS Gate-Source Charge VDS=10V, ID=10A, V =10VGS Gate-Drain Charge VDS=10V, ID=10A, V =10V Drain-Source Diode Forward Voltage GS VGS=0V, IS=2.3A <_<_ VDS=10V, ID=10A, V =4.5V 01-Jul-05

http://www.weitron.com.tw WT4410M WE IT R ON DSV , DRAIN-TO-SOURCE VOLTAGE(V) I ,DRAIN CURRENT(A)D FIG.1. Output Characteristics 0 5 10 15 20 25 30 1500 1200 900 600 300 0.50 1 1.5 2 2.5 3 0.030 0.025 0.020 0.015 0.010 0.005 0 10 205 15 -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 FIG.2 Transfer Characteristics FIG.4 On-Resistance Variation with Drain Current and Temperature FIG.3 Capacitance Coss Ciss Crss -55 C -55 C 25 C 25 C V , GATE-TO-SOURCE VOLTAGE(V)GS V , DRAIN-TO-SOURCE VOLTAGE(V)DS I , DRAIN CURRENT(A)D C ,CAPACITANCE( F) R , ON-RESISTANCE(W) I , DRAIN CURRENT(A)D DS(ON) P FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature T ,JUNCTION TEMPERATURE( C)j T ,JUNCTION TEMPERATURE( C)j GATE-SOURCE THRESHOLD VOLTAGE(V) V ,NORMALIZED BV ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) th DSS V =3VGS T =125 Cj T =125 Cj V =10VGS V =VDS I =250uAD GS I =-250uAD 01-Jul-05

http://www.weitron.com.tw WT4410M WE IT R ON FIG.7 Transconductance Variation with Drain Current FIG.9 Gate Charge FIG.10 Maximum Safe Operating Area FIG.8 Body Diode Forward Voltage Variation with Source Current I ,DRAIN-SOURCE CURRENT(A) Q ,TOTAL GATE CHARGE(nC) V ,BODY DIODE FORWARD VOLTAGE(V)DS V ,DRAIN-SOURCE CURRENT(V)DS SD g I , DRAIN CURRENT(A) g ,TRANSCONDUCTANCE(S) V ,GATE TO SOURCE VOLTAGE(V) I ,SOURCE-DRAIN CURRENT(A) FS GS S D 40.0 10.0 0 5 10 15 20 25 30 35 40 0.1 0.03 0.1 1 10 30 50 0 5 10 15 20 FIG.11 Switching Test Circuit FIG.12 Switching Waveforms V =15VDS I =40AD V =10VDS 10ms 100ms DC R (ON)LimitDS T =25 CC V =10V Single Pulse DS V DD R D V V R S V G G S IN G E N OUT L t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H INV E R T E D 01-Jul-05

http://www.weitron.com.tw WT4410M WE IT R ON SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE ,NORMALIZED TRANSIENTr(t) THERMAL RESISTANCE 0.01 0.1 Duty Cycle=0.5 0.2 0.1 0.05 0.02 P DM 1. R jA (t)=r (t) * R j 2. R j =See Datasheet 3. TjM-TA = PDM* R j (t) 4. Duty Cycle, D=t /t q 1 2 q q q A A A Single Pulse 01-Jul-05

http://www.weitron.com.tw (4X) B eB L 7(4X) A C SYMBOLS MIN 1.35 0.10 0.35 0.18 4.69 3.56 5.70

1.27 BSC

0.60 MAX 1.75 0.20 0.45 0.23 4.98 4.06 6.30 0.80 MILLIMETERS A B C D eB e L q q D e 01-Jul-05