MMBD914 WEITRON | Alldatasheet

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Technical content

Surface Mount Switching Diode *High Speed 4ns *Low Rever Leakage Current *Small Outline Surface Mount SOT-23 Package Features: MMBD914 WEITRON SWITCHING DIODE 200mAMPERS 100VOLTS SOT-23 Outline Dimensions SOT-23 Unit:mm Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 A B DE G M L H J TOP VIEW K C http://www.weitron.com.tw

Electrical Characteristics (TA=25 C Unless Otherwise note) Off Characteristics Rating Symbol Value Unit Characterictics Symbol Max Unit Characterictics Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF IFM(Surge) 100 200 500 Vdc mAdc mAdc Total Device Dissipation FR-5 Board TA=25 C Derate Above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2)TA=25 C Derate Above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD PD R JA TJ, Tstg 225 1.8 556 300 2.4 417 -55 to + 150 mW mW/ C mW mW/ C C/W C/W C Min Reverse Breakdown Votalge (IR=100µAdc) Forward Voltage(IF=10mAdc) Reverse Voltage Leakage Current (VR=20Vdc) (VR=75Vdc) Revarse Recover Time (IF=IR=10mAdc) V(BR) VF IR Diode Capacitance (VR=0, f=1.0MHz) CT trr 100 1000 0.025 5.0 4.0 4.0 Vcc mVdc µAdc pF ns Item Marking Eqivalent Circuitdiagram MMBD914 5D 13 http://www.weitron.com.tw q R JAq

50 OUTPUT

  1. Input pules is adjusted so IR(peak) is equal to 10 mA

Figure 1. Recovery Time Equivalent Test Circuit Figure 4. Capacitance Figure 2. Forward Voltage Figure 3. Leakage Current