SDK03N04 SAMHOP | Alldatasheet
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S mHop Microelectronics C orp.a SDK03N04 Symbol VDS VGS IDM W A PD 1.25 -55 to 150 ID UnitsParameter 400 1.5 V V±30 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 400V 1.5A 3.5 @ VGS=10V
FEATURES
Super high dense cell design for low R DS(ON) . Rugged and reliable. N-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted ) Limit Drain Current-Continuous a -Pulsed b Maximum Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG www.samhop.com.tw Jan,17,2013 Details are subject to change without notice. TA=25°C S G D A 100 °C/WThermal Resistance, Junction-to-AmbientR JA Ver 1.3 D G D S SOT-89 TA=70°C A1.2 TA=70°C W0.8 EAS mJSingle Pulse Avalanche Energy d 10.4 Green Product
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 2 V gFS 0.7 S VSD CISS 186 pF COSS 38 pF CRSS 7p F Qg nC nCQgs nCQgd 128 tD(ON) ns tr 1.9 ns tD(OFF) ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=200V ID=1A VGS=10V RGEN=25 ohm Total Gate Charge Rise Time Turn-Off Delay Time VDS=200V,ID=1A,VGS=10V Fall Time Turn-On Delay Time ohm VGS=10V , ID=1A VDS=10V , ID=1A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 4.0 c f=1.0MHz c VDS=200V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=1A 1.4 V Notes SDK03N04 www.samhop.com.tw Jan,17,2013 _ _ a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12) Ver 1.3 3.5 IS Maximum Continuous Drain-Source Diode Forward Current 1 A 0.81 2.9
Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage Figure 9. Capacitance Figure 10. Gate Charge Figure 11. Maximum Safe
125 C 25 C
www.samhop.com.tw Jan,17,2013 PACKAGE OUTLINE DIMENSIONS SOT-89 REF. MIN. 4.40 4.05 1.50 1.30 2.40 0.89 MAX. 4.60 4.25 1.70 1.50 2.60 1.20 DIME NS IONS A B C A B HC E D G 1.50 0.40 1.40 0.35 0.70 REF. 0.52 1.60 0.41 TYP. REF. E F G D Milimeters H 3.00 REF. F Ver 1.3
www.samhop.com.tw Jan,17,2013 SOT-89 Tape SOT-89 Carrier Tape unit:р SECTION A-A PACKAGE SOP 8N 150п A1 B1 B2 CD E B 3 G H J K !²0.10 5.5 ²0.05 1.50 ²0.10 1.5 ²0.25 12.0 ²0.10 ²0.10 ²0.10 ²0.02 A A B B H C E D J F G K 4.0 ²0.10 8.0 ²0.10 2.0 ²0.05 F +0.30 .0.10 10C 40.0 ²0.20 8±Max. SECTION B-B 12±Max. Ver 1.3