SDF08N60 SAMHOP | Alldatasheet
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Technical content
S mHop Microelectronics C orp.a
FEATURES
Super high dense cell design for low R DS(ON) . Rugged and reliable. TO-220 and TO-220F Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Dec,24,2013 Details are subject to change without notice. S G D Ver 2.1 G D S SDF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 8A600V 0.89 @ VGS=10V Symbol VDS VGS IDM W A PD 150 -55 to 175 ID UnitsParameter 600 V V±30 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS SDP08N60 Drain Current-Continuous -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 62.5 °C/W Thermal Resistance, Junction-to-AmbientR JA TC=25°C 8 ±30 SDF08N60 TC=100°C A5.7 5.7
75 WTC=100°C
°C/W Thermal Resistance, Junction-to-CaseR JC a EAS Single Pulse Avalanche Energy c mJ400 G D S SDP SERIES TO-220 62.5 SDP08N60 SDF08N60
ORDERING INFORMATION
Ordering Code Package Marking Code Delivery Mode RoHS Status SDP08N60HZ SDP08N60PZ TO-220 TO-220 SDP08N60 08N60 Tube Tube Halogen Free Pb Free SDF08N60HZ SDF08N60PZ TO-220F TO-220F SDF08N60 08N60 Tube Tube Halogen Free Pb Free
www.samhop.com.tw Dec,24,2013 Ver 2.1
4 Symbol Min Typ Max Units
IGSS ±100 nA VGS(th) 2 V gFS 5.3 S VSD CISS 1080 pF COSS 106 pF CRSS 10 pF Qg nC 18.4 nCQgs nCQgd tD(ON) ns tr 2.9 ns tD(OFF) 5.5 ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=300V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time VDS=300V,ID=1A,VGS=10V Fall Time Turn-On Delay Time ohm VGS=10V , ID=4A VDS=20V , ID=4A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=480V , VGS=0V VGS= ±30V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 1.11 b f=1.0MHz b VDS=300V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=3A 1.4 V 13.4 0.89 0.79 Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12) SDP08N60 SDF08N60
Ver 2.1 www.samhop.com.tw Dec,24,2013 SDP08N60 SDF08N60
Ver 2.1 www.samhop.com.tw Dec,24,2013 4.50 2.35 2.15 0.50 0.70 1.15 0.45 15.30 6.67 9.90 9.20 2.54 REF. 2.79 15.60 3.20 4.90 2.75 2.92 0.65 0.90 1.55 0.70 16.30 6.77 10.32 9.40 3.60 16.00 3.40 SDP08N60 SDF08N60 E Q L b1x3 L1 bx3 e D A c TO-220F SYMBOL MILLIMETERS MIN MAX A b c D E e L Q 9.45 10.05 6.90 7.10 2.90 3.55
Ver 2.1 www.samhop.com.tw Dec,24,2013 SDP08N60 SDF08N60
Ver 2.1 www.samhop.com.tw Dec,24,2013 F Tube SDP08N60 SDF08N60
www.samhop.com.tw10 TOP MARKING DEFINITION TO-220 (Halogen Free) XXXXXX SDP08N60 Product No. SamHop Logo Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SMC internal code No. (A,B,C...Z) 08N60 XXXXX TO-220 (Pb Free) Product No. SamHop Logo Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number PB Free Ver 2.1 SDP08N60 SDF08N60 Dec,24,2013
www.samhop.com.tw11 TOP MARKING DEFINITION TO-220F (Halogen Free) Product No. SamHop Logo Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) XXXXXX SDF08N60 TO-220F (Pb Free) XXXXX 08N60 Product No. SamHop Logo Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number PB Free SMC internal code No. (A,B,C...Z) Ver 2.1 SDP08N60 SDF08N60 Dec,24,2013