SDF02N20 SAMHOP | Alldatasheet

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S mHop Microelectronics C orp.a

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. TO-220 and TO-220F Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Sep,30,2013 Details are subject to change without notice. S G D Ver 1.0 G D S SDF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted ) PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 2A200V 3.0 @ VGS=10V Symbol VDS VGS IDM W A PD -55 to 175 ID UnitsParameter 200 5.9 V V±30 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS SDP02N20 Drain Current-Continuous -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 62.5 °C/W Thermal Resistance, Junction-to-AmbientR JA TC=25°C 2 5.9 ±30 SDF02N20 TC=100°C A1.4 1.4

37.5 WTC=100°C

°C/W Thermal Resistance, Junction-to-CaseR JC EAS Single Pulse Avalanche Energy c mJ81 G D S SDP SERIES TO-220 12.5 a 62.5 SDP02N20 SDF02N20 Green Product

www.samhop.com.tw Sep,30,2013 Ver 1.0

4 Symbol Min Typ Max Units

IGSS ±100 nA VGS(th) 2V gFS 1.3 S VSD CISS 183 pF COSS 30 pF CRSS 6 pF Qg 9.5 nC nCQgs 15.4 nCQgd 5.2 tD(ON) ns tr 0.95 ns tD(OFF) 0.92 ns tf ns Gate-Drain Charge VDS=25V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=100V ID=1A VGS=10V RGEN= 6 ohm Total Gate Charge Rise Time Turn-Off Delay Time VDS=100V,ID=1A,VGS=10V Fall Time Turn-On Delay Time ohm VGS=10V , ID=1A VDS=10V , ID=1A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=250uA VDS=160V , VGS=0V VGS= ±30V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA Reverse Transfer Capacitance ON CHARACTERISTICS 3.9 b f=1.0MHz b VDS=100V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=1A 1.4 V 2.8 3.0 0.82 Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12) SDP02N20 SDF02N20

Figure 1. Out put Charact erist ics Figure 2. Transfer Charact erist ics

25 C -55 C

Ver 1.0 www.samhop.com.tw Sep,30,2013 SDP02N20 SDF02N20

Ver 1.0 www.samhop.com.tw Sep,30,2013 E D H D G I J F O A b c E O e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70 SDP02N20 SDF02N20

Ver 1.0 www.samhop.com.tw Sep,30,2013 SDP02N20 SDF02N20

Ver 1.0 www.samhop.com.tw Sep,30,2013 F Tube SDP02N20 SDF02N20

www.samhop.com.tw10 TOP MARKING DEFINITION TO-220 (GREEN) XXXXXX SDP02N20 Product No. SamHop Logo Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SMC internal code No. (A,B,C...Z) 02N20 XXXXX TO-220 (PB FREE) Product No. SamHop Logo Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number PB Free Ver 1.0 SDP02N20 SDF02N20 Sep,30,2013

www.samhop.com.tw11 TOP MARKING DEFINITION TO-220F (GREEN) Product No. SamHop Logo Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) XXXXXX SDF02N20 TO-220F (PB FREE) XXXXX 02N20 Product No. SamHop Logo Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number PB Free SMC internal code No. (A,B,C...Z) Ver 1.0 SDP02N20 SDF02N20 Sep,30,2013