SDU9916 SAMHOP | Alldatasheet

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N-C hannel E nhancement Mode F ield E ffect T ransistor T O-252 and T O-251 P ackage. AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) S amHop Microelectronics C orp. August , 2002 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) T Y P 20V 20A 25 @ V G S = 4.5V 35 @ V G S = 2.7V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S G D S DU S E R IE S T O-252AA(D-P AK ) S DD S E R IE S T O-251(l-P AK ) G G S S D D S DU/D9916 T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-C ase T hermal R esistance, J unction-to-Ambient R J C 3 50R J A /WC /WC P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S V -P ulsed 20ID A 60IDM A Drain-S ource Diode F orward C urrent 20IS A Maximum P ower Dissipation P D W Operating and S torage Temperature R ange T J , T S T G -55 to 150 C @ T c=25 C Derate above 25 C 0. 4 W / C Drain C urrent-C ontinuous @ T J =125 C a

E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 20 V Zero G ate Voltage Drain C urrent IDS S V DS 20V, V G S 0V= = 1 uA G ate-B ody Leakage IG S S V G S 8V, V DS 0V= = nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 0.9 V Drain-S ource On-S tate R esistance R DS (ON) V G S 4.5V, ID 6.0A 25 V G S 2.5V, ID 5.2A 35 On-S tate Drain C urrent ID(ON) V DS = 5V, V G S = 4.5V 20 247 A SF orward Transconductance F Sg V DS 10V, ID 6.0A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =10V, V G S = 0V f =1.0MHZ

650 P F

270 P F

S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 10V, ID = 1A, V G E N = 4.5V, R L = 10 R G E N = 6 14 ns ns ns ns 6.5 12 25 12 20 Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =10V, ID = 6A, V G S =4.5V 10 nC nC nC C F all T ime = = 1.51.0 2.8 2.6 11.5 23 ohm ohm m ohm m ohm 100

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =1.7A 0.72 1.2 V b C Notes c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with TemperatureF igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A)C , C apacitance (pF ) On-R esistance(Ohms) ID, Drain C urrent (A) ＜ ＜ a.S urface Mounted on F R 4 B oard, t 10sec.＜ R DS (ON), 1.8 1.6 1.2 0.8 1.4 1.0 0.6 -50 0 50 100 150 V G S =4.5V 0 0.5 1 1.5 2 2.5 3 V G S =3V 25 C 0.0 0.5 1 1.5 2 2.5 3 -55 C T j=125 C T j, J unction T emperature ( C ) ID=6A (Normalized) 1800 1500 1200 900 600 300 0 5 10 15 20 C oss C rss C iss

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 1.09 1.06 1.03 1.00 0.94 0.97 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA 0 3 6 9 12 15 V DS =10V 0 2 4 6 8 10 12 14 V DS =10V ID=10A T J =25 C 300 200 100 0.5 0.1 1 10 30 60 V G S =4.5V S ingle P uls e T c=25 C RDS(ON) Limit DC 100ms 10ms 1ms S DU/D9916

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective S DU/D9916 INV E R T E D 0.1 0.01 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R θJ C (t)=r (t) * R θJ C 2. R θJ C =S ee Datasheet 3. T J M-T c = P DM* R θJ C (t) 4. Duty C ycle, D=t1/t2 S ING LE P ULS E V DD R D V V R S V G G S IN G E N OUT L