SDD40N03L

SDU40N03 SAMHOP | Alldatasheet

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N-C hannel Logic Level E nhancement Mode F ield E ffect T ransistor T O-252 and T O-251 P ackage. AB S OLUT E MAXIMUM R AT ING S (T C =25 C unless otherwise noted) S amHop Microelectronics C orp. August , 2002 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) T Y P 30V 40A 9 @ V G S = 10V 13 @ V G S = 4.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S G D S DU S E R IE S T O-252AA(D-P AK ) S DD S E R IE S T O-251(l-P AK ) G G S S D D S DU/D40N03L T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-C ase T hermal R esistance, J unction-to-Ambient R J C 3 50R J A /WC /WC P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage 20V G S V -P ulsed 40ID A IDM A Drain-S ource Diode F orward C urrent 40IS A Maximum P ower Dissipation P D W Operating and S torage Temperature R ange T J , T S T G -55 to 175 C @ T c=25 C Derate above 25 C 0. 3 W / C Drain C urrent-C ontinuous @ T J =125 C a 120

E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S VG S = 0V, ID = 250uA 30 V Zero G ate Voltage Drain C urrent IDS S VDS = 24V, VG S = 0V 10 uA G ate-B ody Leakage IG S S V G S = 20V, V DS = 0V nA ON C HAR AC T E R IS T IC S a G ate T hreshold Voltage V G S (th) V DS = V G S , ID = 250uA 1 1.5 3 V Drain-S ource On-S tate R esistance R DS (ON) V G S = 10V, ID =20A V G S = 4.5V, ID = 10A On-S tate Drain C urrent ID(ON) V DS = 10V, V G S = 10V 40 A SF orward Transconductance F Sg V DS = 10V, ID = 20A DY NAMIC C HAR AC T E R IS T IC S b Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DD =15V, V G S = 0V f = 1.0MHZ 1375 670 200 132 P F P F P F S WIT C HING C HAR AC T E R IS T IC S b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tfF all time V DD = 15V, ID =1A, V G S = 10V, R G E N = 6 ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS = 10V, ID = 40A, V G S =10V nC nC nC 8.2 5.3 100 m ohm m ohm ohm nC V DS = 10V,ID = 40A,V G S =10V V DS = 10V,ID = 40A,V G S =4.5V 23.519.5

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is = 25A 1.3 V a Notes b.G uaranteed by design, not subject to production testing. a.P ulse Test:P ulse Width 300us, Duty C ycle 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation with Drain C urrent and TemperatureF igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A) C , C apacitance (pF ) Drain-S ource, On-R esistance ID, Drain C urrent (A) ID, Drain C urrent (A) R DS (ON), Normalized S DU/D40N03L 0 0.5 1 1.5 2 2.5 3 -55 C 25 C 0 1 2 3 4 5 6 T j=125 C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 25 C T j=125 C -55 C 0 10 20 30 40 V G S =10V V G S =4V C iss C oss C rss 3600 3000 2400 1800 1200 600 0 5 10 15 20 25 30

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 0.1 1.0 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=250uA 0 5 10 15 20 V DS =10V 0 5 10 15 20 25 30 35 40 V DS =10V ID=40A 300 200 100 0.5 0.1 1 10 30 60 V G S =10V S ingle P uls e T c=25 C RDS(ON) Limit DC 100ms 10ms 1ms

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective S DU/D40N03L INV E R T E D 0.1 0.01 1 10 D=0.5 0.2 0.1 0.05 0.02 0.01 P DM 1. R θJ A (t)=r (t) * R θJ A 2. R θJ A=S ee Datasheet 3. T J M-T A = P DM* R θJ A (t) 4. Duty C ycle, D=t1/t2 S ING LE P ULS E V DD R D V V R S V G G S IN G E N OUT L