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Dual 1200V Silicon Carbide Schottky Diode - 1 CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com KEY FEATURES VRRM 1200V IF @ 125°C 10A SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE TEST CONDITIONS Max D.C. Reverse Voltage VR 1200V Repetitive Peak Voltage VRRM 1200V Surge Peak Reverse Voltage VRSM 1200V DC Blocking Voltage VDC 1200V DC Forward Current IF(avg) 10A/20A 10A/20A TC = 25°C TC = 125°C Repetitive Peak Forward Current IFRM 44A/88A tbd TC = 125°C, tp = 10ms, Half Sine Pulse Non-Repetative Forward Surge Current I FSM 43A/89A 33A/66A TC = 25°C, tp = 8.3ms, Half Sine Pulse TC = 150°C, tp = 8.3ms, Half Sine Pulse Power Dissipation PD 16W 19W T C = 25°C TC = 125°C Maximum Case Temperature TC(max) 175°C Maximum Junction Temperature TJ(max) 200°C Operating Temperature Range T -40°C to +125°C Storage Temperature Range TSTG -40°C to +125°C Lead Temperature for 10 Seconds TL 260°C BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY
APPLICATIONS
HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ORDERING GUIDE Part Number SDD10120AD Description Dual 1200V Silicon Carbide Diode D1 D2 1 3
Dual 1200V Silicon Carbide Schottky Diode - 2 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com TYPICAL PERFORMANCE CURVES T = + 225°C T = + 200°C T = + 175°C T = + 150°C T = + 125°C T = + 100°C T = + 75°C T = + 50°C T = + 25°C T = 0°C T = - 25°C T = - 55°C FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 FORWARD CURENT (A) 0.1 2 4 6 8 10 12 14 16 REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT (µA) 2500 2000 1500 1000 500 REVERSE VOLTAGE (V) 1 200 400 600 800 1000 1200 1400 T = + 225°C T = + 200°C T = + 175°C T = + 150°C T = + 125°C T = + 100°C T = + 75°C T = + 50°C T = + 25°C T = 0°C T = - 25°C T = - 55°C 0 200 400 600 800 1000 1400 CAPACITANCE (pF) CAPACITANCE VS. REVERSE VOLTAGE REVERSE VOLTAGE (V) 0.1 0.01 THETA (C/W) MAXIMUM THERMAL IMPEDANCE TIME (s) 1.E+01 1200 T = + 225°C T = + 200°C T = + 175°C T = + 150°C T = + 125°C T = + 100°C T = + 75°C T = + 50°C T = + 25°C T = 0°C T = - 25°C T = - 55°C FORWARD VOLTAGE (V) FORWARD VOLTAGE vs FORWARD CURRENT 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 FORWARD CURENT (A) 0.1 2 4 6 8 10 12 14 16 REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT (µA) 2500 2000 1500 1000 500 REVERSE VOLTAGE (V) 1 200 400 600 800 1000 1200 1400 T = + 225°C T = + 200°C T = + 175°C T = + 150°C T = + 125°C T = + 100°C T = + 75°C T = + 50°C T = + 25°C T = 0°C T = - 25°C T = - 55°C
Dual 1200V Silicon Carbide Schottky Diode - 3 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com sdd10120ad-ds-revD-0518.indd © 2018 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter Symbol Min. Typ. Max. Unit DC Blocking Voltage VDC 1200 1300 V Forward Voltage IF = 10A, TJ = 25°C IF = 10A, TJ = 125°C VF 1.4 1.7 V V Reverse Current VR = 1400V, TJ = 25°C VR = 1400V, TJ = 125°C IRM 200 1000 µA µA Total Capacitive Charge I F = 10A/20A QC 19/54 nC Total Capacitance 100V, f = 1MHz 200V, f = 1MHz 400V, f = 1MHz 600V, f = 1MHz 800V, f = 1MHz 1000V, f = 1MHz C pF Switching Time I F = 10A Trr 20 ns PACKAGE OUTLINE - TO-247-3L THERMAL AND MECHANICAL CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit Thermal Resistance, Junction to Case RӨ(JC) 1.7 °C/W Weight W 6.1 6.8 g Mounting Torque MS 1.4 1.76 N-m PIN DESCRIPTION Pin Description
1 Anode 1
2 Cathode
3 Anode 2
2 x 0.180 (4.58) 0.232 (5.90) 0.628 (15.94) 0.694 (17.63) 0.830 (21.07) 0.160 (4.07) 0.795 (20.19) 3 x 0.050 (1.27) 2 x 0.083 (2.10) 0.028 (0.71) 0.095 (2.41) 0.080 (2.04) 0.198 (5.02) 0.522 (13.26) HEATSINK SURFACE dia. 0.140~0.144 (3.55~3.65) 1 3 2 x 0.078 (1.98) 0.122 (3.10) 0.242 (6.15)