SDP55N02 SAMHOP | Alldatasheet

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N-C hannel E nhancement Mode F ield E ffect T ransistor AB S OLUT E MAXIMUM R AT ING S (T C =25 C unless otherwise noted) T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-C ase T hermal R esistance, J unction-to-Ambient R J C R J A 62.5 /WC /WC P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S V -P ulsed ID 23 A IDM 57 A Drain-S ource Diode F orward C urrent IS 55 A Maximum P ower Dissipation P D W Operating and S torage Temperature R ange T J , T S T G -65 to 175 C @ T c=25 C 75 Drain C urrent-C ontinuous @ T J =125 C a S G D S DB S E R IE S T O-263(DD-P AK ) G S D S DP S E R IE S T O-220 S D G P R ODUC T S UMMAR Y V DS S ID R DS (on) ( m W ) Max 20V 32A 19 @ V G S = 4.5V S DP /B 55N02 F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & T O-263 package. S amHop Microelectronics C orp. May,2004 ver1.1

E LE C T R IC AL C HAR AC T E R IS T IC S (T C 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 20 V Zero G ate Voltage Drain C urrent IDS S V DS 16V, V G S 0V= = 10 uA G ate-B ody Leakage IG S S V G S 8V, V DS 0V = = 100 nA ON C HAR AC T E R IS T IC S a G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 1 V Drain-S ource On-S tate R esistance R DS (ON) V G S = 4.5V, ID = 21A 19 On-S tate Drain C urrent ID(ON) V DS = 10V, V G S = 10V 40 A SF orward Transconductance F Sg V DS = 10V, ID = 26A DY NAMIC C HAR AC T E R IS T IC S b Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =15V, V G S = 0V f =1.0MHZ

1100 P F

600 P F

S WIT C HING C HAR AC T E R IS T IC S b Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V DD = 10V, ID = 1A, V G S = 10V R G E N = 6 50 ns ns ns ns 200 Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =10V, ID = 30A, V G S =4.5V nC nC nC C F all T ime 18.2 5.3 2.2 S DP /B 55N02 0.9 1.5 62.5 m ohm ohm

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted) DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =26A 0.9 1.3 V a F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 4. On-R esistance Variation TemperatureF igure 3. C apacitance V DS , Drain-to S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V ) ID, Drain C urrent(A)C , C apacitance (pF ) ID, Drain C urrent (A) Notes b.G uaranteed by design, not subject to production testing. a.P ulse Test:P ulse Width 300us, Duty C ycle 2%. C iss C oss C rss 3000 2500 2000 1500 1000 500 0 105 15 20 25 30 0 1 2 3 4 5 Drain-S ource On-R esistance R DS (ON), Normalized S DP /B 55N02 T J =125 C V G S =3V -55 C 25 C -50 -25 0 25 50 75 100 125 150 1.60 1.40 1.20 1.00 0.80 0.60 0.40 ID=26A V G S =10V with T j, J unction T emperature ( C )

F igure 6. B reakdown V oltage V ariation F igure 5. G ate T hres hold V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S ) B V DS S , Normalized Drain-S ource B reakdown V oltageIs , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent IDS , Drain-S ource C urrent (A) F igure 10. Maximum S afe O perating Area V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) ID, Drain C urrent (A) 0 10 20 30 40 V DS =10V 1.0 0.1 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 0.1 0.1 1 10 30 60 RDS(ON)Limit V G S =10V S ingle P uls e T c=25 C 10ms100ms 1ms V G S , G ate to S ource V oltage (V ) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) 0 3 6 9 1512 18 21 24 V DS =10V ID=30A DC S DP /B 55N02 -50 -25 0 25 50 75 100 125 150 1.06 1.04 1.02 1.00 0.98 0.96 0.94 ID=250uA 100μs

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H INV E R T E D T ransient T hermal Impedance 0.1 0.01 0.01 0.1 1 10 100 1000 10000 P DM S quare Wave P ulse Duration (msec) F igure 13. Normalized T hermal T ransient Impedance C urve 1. R θJ C (t)=r (t) * R θJ C 2. R θJ C =S ee Datasheet 3. T J M-T C = P * R θJ C (t) 4. Duty C ycle, D=t1/t2 r(t),Normalized E ffective D=0.5 0.2 0.1 0.05 0.02 0.01 S ingle P ulse V DD R D V V R S V G G S IN G E N OUT L S DP /B 55N02