SDB310Q SEMTECH_ELEC | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- Low power rectified
- Silicon epitaxial type
- High reliability Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Reverse Voltage V R 30 V Forward Current I F 0.2 A Repetitive Peak Forward Current I FRM 0.5 A Non-Repetitive Peak Forward Current (10 ms) I FSM 2 A Power Dissipation P D 150 mW Junction Temperature T j 150 OC Storage Temperature Range T s - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 10 mA a t IF = 30 mA VF 0.4 0.5 V Reverse Current at VR = 30 V IR 1 µA Total Capacitance at VR = 1 V, f = 1 MHz CT 10 pF Reverse Recovery Time at IF = IR = 10 mA, IRR = 1 mA, RL = 100 Ω trr 5 ns Anode2 Top View Marking Code: "G" Simplified outline SOD-523 and symbol G PINNING PIN Cathode
DESCRIPTION
Dated : 23/11/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) SDB310Q
Dated : 23/11/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) SDB310Q PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 mm A E b A C UNIT p D A b CDEH V H ∠ ALL ROUND E Ep 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 5 O