SDP20S30 INFINEON | Alldatasheet
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Silicon Carbide Schottky Diode /G01 Revolutionary semiconductor material - Silicon Carbide /G01 Switching behavior benchmark /G01 No reverse recovery /G01 No temperature influence on the switching behavior /G01 No forward recovery Product Summary VRRM 300 V Qc 23 nC IF 2x10 A P-TO220-3-1.P-TO220-3.SMD Marking D20S30 S20S30 Type Package Ordering Code SDP20S30 P-TO220-3-1. Q67040-S4419 SDB20S30 P-TO220-3.SMD Q67040-S4374 1 2 3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Value Unit Continuous forward current, TC=100°C IF 10 A RMS forward current, f=50Hz IFRMS 14 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 36 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 45 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 100 i 2t value, TC=25°C, tp=10ms /G02 i2dt 6.5 A²s Repetitive peak reverse voltage VRRM 300 V Surge peak reverse voltage VRSM 300 Power dissipation, single diode mode, TC=25°C Ptot 65 W Operating and storage temperature Tj , Tstg -55... +175 °C
Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case (per leg) RthJC - - 2.3 K/W SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C VF 1.5 1.5 1.7 1.9 V Reverse current VR=300V, Tj=25°C VR=300V, Tj=150°C IR 200 1000 µA 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Electrical Characteristics,at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values Unit min. typ. max. AC Characteristics Total capacitive charge1) VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C Qc - 23 - nC Switching time2) VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C trr - n.a. - ns Total capacitance VR=0V, TC=25°C, f=1MHz VR=150V, TC=25°C, f=1MHz VR=300V, TC=25°C, f=1MHz C 600 pF
1 Power dissipation (per leg)
Ptot = f (TC) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot
2 Diode forward current (per leg)
IF= f (TC) parameter: Tj/G03 175 °C 0 20 40 60 80 100 120 140 °C 180 TC A IF 4 Typ. forward power dissipation vs. average forward current (per leg) PF(AV)=f(IF) TC=100°C, d = tp/T 0 2 4 6 8 10 12 14 A 18 IF(AV) W PF(AV) d=1 d=0.5 d=0.2 d=0.1 3 Typ. forward characteristic (per leg) IF = f (VF) parameter: Tj , tp = 350 µs VF A IF -40°C 25°C 100°C 125°C 150°C
5 Typ. reverse current vs. reverse voltage (per leg)IR=f(VR) 50 100 150 200 V 300 VR -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 µA IR 150°C 125°C 100°C 25°C
6 Transient thermal impedance (per leg)
ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SDP20S30 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage (per leg)C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 0 10 1 10 2 10 3 V VR 100 150 200 250 300 350 pF 450 C 8 Typ. C stored energy (per leg) EC=f(VR) 0 50 100 150 200 V 300 VR 0.5 1.5 µJ 2.5 EC
9 Typ. capacitive charge vs. current slope (per leg)Qc=f(diF/dt) parameter: Tj = 150 °C 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt nC Qc IF*0.5 IFIF*2
symbol [mm] [inch] m i nm a xm i nm a x A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 2.54 typ. 0.1 typ. dimensions P-TO220-3-1 symbol [m m] [inch] m i nm a xm i nm a x A 9.80 10.00 0.3858 0.3937 B C 1.25 1.75 0.0492 0.0689 D 0.95 1.15 0.0374 0.0453 E F 0.72 0.85 0.0283 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 3.30 3.90 0.1299 0.1535 R S 1.70 2.50 0.0669 0.0984 T 0.50 0.65 0.0197 0.0256 U V W X Y Z 9.40 typ. 0.3701 typ. 16.15 typ. 0.6358 typ. 6.43 typ. 0.2532 typ. 4.60 typ. 0.1811 typ. 10.8 typ. 0.4252 typ. 1.35 typ. 0.0532 typ. 14.1 typ. 0.5551 typ. 8° max 8° max dimensions 2.54 typ. 0.1 typ. 5.08 typ. 0.2 typ. 1.3 typ. 0.0512 typ. TO-220-3-45 (P-TO220SMD)
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