SDA32 ZETEX | Alldatasheet
Document overview
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Technical content
The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. The device helps suppress transients caused by transmission line reflections, cross talk and switching noise. The SDA32 consists of an array of 16 high speed Schottky diode pairs suitable for clamping to VCC and / or Gnd.
FEATURES
- Reduced reflection noise
- Repetitive peak forward current - 200mA
- 16 diode pairs
- SO20 and DIL20 packages
APPLICATIONS
- Termination of data lines
- Protection of memory devices SCHOTTKY DIODE ARRAY ISSUE 2 – JANUARY 1998 D01 D02 D03 D04 D05 D06 D07 D14 D15 D16 VCC VCC Gnd Gnd D10 D11 D12 D13D08 D09 SCHEMATIC DIAGRAM SDA32 4-11
ABSOLUTE MAXIMUM RATING (at Tamb= 25°C unless otherwise stated)* Steady-State Reverse Voltage 7V Continuous Forward Current 50mA(1) 170mA(2) Repetitive Peak Forward Current (3) 200mA(1) 1A(2) Continuous Total Power Dissipation (4) (SO and DIL packages) 625mW Operating Free-air Temperature Range 0 to 70°C Storage Temperature Range -65 to 150°C * Stresses beyond those listed above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under the recommended operating conditions is not implied. Exposure to absolute maximum rated conditions for extended periods of time may affect device reliability. Note: (1) Any D terminal from Gnd or to V CC (2) Total through all Gnd or VCC terminals (3) These values apply for tW=100µs, duty cycle ≤ 20% (4) For operation above 25°C , derate linearly at the rate of 6.25mW/°C ELECTRICAL CHARACTERISTICS (at Tamb=25°C unless otherwise stated) Single-Diode Operation PARAMETER SYMBOL MIN. TYP . MAX. UNIT CONDITIONS Static Forward Voltage V F 0.85 1.05 V To V CC , IF=18mA 1.05 1.3 V To V CC , IF=50mA 0.75 0.95 V From Gnd, I F=18mA 0.95 1.2 V From Gnd, I F=50mA Peak Forward Voltage V FM 1.45 V I F=200mA Static Reverse Current I R 6 µA To VCC ,VR=7V 5 µA From Gnd, VR=7V Total Capacitance C T 61 6 p F V R=0, f=1MHz 46p F V R=2V, f=1MHz Note: (5) Test conditions and limits apply separately to each of the diodes. The diodes not under test are open circuited during the measurement of these characteristics. Multiple-Diode Operation PARAMETER SYMBOL MIN. TYP . MAX. UNIT CONDITIONS Internal Crosstalk Current I X 0.8 2 mA Total I F=1A (6) 0.02 0.2 mA Total I F=198mA (6) Note: (6) IX is measured under the following conditions with one diode static, and all others switching. Switching diodes: tW=100µs, duty cycle=0.2; static diode; VR=5V. The static diode input current is the internal crosstalk current IX. SDA32 4-12
IF vs VF Characteristic IF vs VF Characteristic Low IF vs VF Characteristic TYPICAL CHARACTERISTICS SWITCHING CHARACTERISTICS (over operating free-air temperature range) PARAMETER SYMBOL MIN. TYP. MAX UNIT CONDITIONS Reverse Recovery Time t rr 81 6 n s I F=10mA IR(REC)=1mA IRM(REC) =10mA RL=100Ω 4-13
Package Suffix – N20 Top View CONNECTION DIAGRAMS DIL20 Package Suffix – D20 Top View SDA32 Part Number Package Part Mark SDA32N20 SO20 SDA32 SDA32D20 DIL20 SDA32