SD5501 CALOGIC | Alldatasheet
Document overview
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Technical content
FEATURES
- • Normally ON Configuration
- • Low Interelectrode Capacitances
- • High-Speed Switching
- • Wide Dynamic Range
APPLICATIONS
- • High-Speed Analog Switches
- • Wide-Band Dual Differential Amplifiers
- • Dual Cascode Amplifiers
- • High Intercept Point Double Balanced Mixers
DESCRIPTION
The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design. This "normally-ON" device is well suited for high speed instrumentation and communication systems where multiple channels are required for fast switching or dual amplification. Available in a 16-pin plastic dual in-line plastic package or chip form.
ORDERING INFORMATION
Part Package Temperature Range SD5501N Plastic -55 oC to +125oC XSD5501 Sorted Chips in Carriers -55 oC to +125oC LLC TOP VIEW N/C N/C N/C BODY PIN CONFIGURATION CD2 SCHEMATIC DIAGRAM G D S G D S G D S G D S BODY
ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise noted) PD Total Package Power Dissipation PD Single Device Power Dissipation (at or below TA = +25 Tj Operating Junction Temperature Range . . -55 to +85oC ELECTRICAL CHARACTERISTCIS (TA = +25oC unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS STATIC BVDS Drain-Source Breakdown Voltage 20 V ID = 10 nA, VGS = VBS = -5.6V BVSD Source-Drain Breakdown Voltage 10 I S = 10 nA, VGD = VBD = -5.6V BVDB Drain-Body Breakdown Voltage 25 I D = 10nA, VGB = 0, Source Open BVSB Source-Body Breakdown Voltage 15 I S = 10µA, VGB = 0, Drain Open IGSS(fwd) Forward Gate Leakage Current 1.0 nA V GS = 25V, VDS = VBS = 0 IG Gate Operating Current -3.0 -100 pA VDG = 15V, ID = 5.0 mA, VBS = -5.6V-0.7 -10 nA T A = +125oC VGS (off) Gate - Source Cutoff Voltage -1.0 -5.0 V VDS = 10V, ID = 1.0µA, VBS = 5.6V VGS (on) Gate-Source On Voltage -0.3 -3.0 V DG = 10V, ID = 5mA, VSB = -5.6V IDSX Zero Gate Voltage Drain Current 7.0 40 mA VDS = 10V, VGS = 0, VBS = -5.6V5.0 T A = +125oC rDS (ON) Drain-Source On Resistance 100 150 ohms I D = 1.0mA, VGS = 0, VBS = -5.6V DYNAMIC gfs Common-Source Forward Transconductance (1) 6.0 7.5 12 mS VDG = 10V ID = 5.0mA VBS = -5.6V f = 1 KHz gos Common-Source Output Conductance 200 350 µS C iss Common-Source Input Capacitance 3.5 pF f = 1 MHz C oss Common-Source Output Capacitance 1.2 C rss Common-Source Reverse Transfer Capacitance 0.3 C (gs + sb) Source Node Capacitance 4.5 MATCHING VGSM Gate Source Voltage Match 50 mV V DG = 10V, ID = 5.0mA, VBS = -5.6V rDS(on) Drain-Source On Resistance Match 10% I D = 1.0 mA, VGS = 0, VBS = 5.6V IDXSM Zero Gate Voltage Drain Current Match 10% VDG = 10V, ID = 5.0 mA, VBS = -5.6Vgfsm Transconductance Match (1), (2) 10% f = 1 KHz Note 1: Pulse Test, 80 sec, 1% Duty Cycle Note 2: Match of 4 channels