SD5000 CALOGIC | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
FEATURES
- • Low On Resistance
- • Low Insertion Loss
- • Low Capacitance:
- • Bidirectional Operation
APPLICATIONS
- • Analog Switching
- • Audio Routing
- • Sample & Hold
- • Crosspoint Switches
- • Choppers
- • Video Switches
DESCRIPTION
The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal applications.
ORDERING INFORMATION
Part Package Temperature Range SD5000N Plastic DIP Package -55 oC to +150oC SD5001N Plastic DIP Package -55 oC to +150oC SD5002N Plastic DIP Package -55 oC to +150oC XSD5000 Sorted Chips in Carriers -55oC to +150oC XSD5001 Sorted Chips in Carriers -55oC to +150oC XSD5002 Sorted Chips in Carriers -55oC to +150oC SD5400CY Plastic DIP Package -55 oC to +150oC SD5401CY Plastic DIP Package -55 oC to +150oC SD5402CY Plastic DIP Package -55 oC to +150oC XSD5400 Sorted Chips in Carriers -55oC to +150oC XSD5401 Sorted Chips in Carriers -55oC to +150oC XSD5402 Sorted Chips in Carriers -55oC to +150oC CORPORATION CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 FUNCTIONAL BLOCK DIAGRAM SO PIN CONFIGURATION DUAL IN LINE PACKAGE SUBSTRATE 4SD4 D 3 D 2 D 1 1Q-20 TOP VIEW S S G D NC D G BODY D NC G S S G NC D 1Q-22 TOP VIEW SS G D G BODY D G SS G NC D 1Q-21 D 2
DC ELECTRICAL CHARACTERISTICS TA = 25oC SYMBOL PARAMETERS SD5000/SD5400 SD5001/SD5401 SD5002/SD5402 UNITS CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX Vanalog Analog Signal Range -10 +10 -5 +5 -7.5 +7.5 V Breakdown Voltage BV DS BV SD BV DB BV SB Drain-Source Source-Drain Drain-Body Source-Body 25 10 25 15 22.5 22.5 V VGS = VBS = -5V, ID = 10nA VGD = VBD = -5V, IS = 10nA VGB = 0V, ID = 10nA Source Open VGB = 0V, IS = 10µA, Drain Open Leakage Current - SD5000/SD5400 I DS(OFF) ISD(OFF) IGBS Drain-Source Source-Drain Gate 1.0 1.0 10.0 10.0 1.0 nA nA µA VGS = VBS = -5V, VDS = 20V VGD = VBD = -5V, VSD = 20V VDB = VSB = 0V, VGB = 30V Leakage Current - SD5001/SD5401 IDS(OFF) ISD(OFF) IGBS Drain-Source Source-Drain Gate 1.0 1.0 10.0 10.0 1.0 nA nA µA VGS = VBS = -5V, VDS = 10V VGD = VBD = -5V, VSD = 10V VDB = VSB = 0V, VGB = 25V Leakage Current - SD5002/SD5402 IDS(OFF) ISD(OFF) IGBS Drain-Source Source-Drain Gate 1.0 1.0 10.0 10.0 1.0 nA nA µA VGS = VBS = -5V, VDS = 15V VGD = VBD = -5V, VSD = 15V VDB = VSB = 0V, VGB = 30V R DS(ON) Drain-Source ON Resistance 70 50 70 50 Ω VGS = 5V, VSB = 0V, ID = 1mA VGS = 10V, VSB = 0V, ID = 1mA VGS = 15V, VSB = 0V, ID = 1mA VGS = 20V, VSB = 0V, ID = 1mA R DS(ON) Match ON Resiatance 1 5 1 5 1 5 Ω VGS = 5V AC ELECTRICAL CHARAC TERISTICS TA = 25oC SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS gfs Forward Transconductance 10 12 mS V DS = 10V, ID = 20mA, VSB = 0V, f = 1kHz Capacitances C G C D C S C DG Gate Node Drain Node Source Node Reverse Transfer 2.4 1.3 3.5 0.3 3.5 1.5 4.0 0.5 pF V DS = 10V, f = 1MHz, VGS = VBS = -15V C T Crosstalk 107.0 dB f = 3kHz, R G = 600Ω CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CORPORATION SWITCHING CHARACTERISTICS TA = 25oC SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS td(ON) Turn-On Time 0.7 1.0 nsec R L = 680Ω , RG = 51 VDD = 5V VG(ON) = 10V tr Rise Time 0.8 1.0 tOFF* Turn-Off Time 10.0 *tOFF is dependent on RL and C and does not depend on the device characteristics.
SD5400 / SD5401 / SD5402CORPORATION CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER SD5000/SD5400 MAX. VALUE SD5001/SD5401 MAX. VALUE SD5002/SD5402 MAX. VALUE UNITS Breakdown Voltage VDS Drain-Source 20 10 15 V VSD Source-Drain 20 10 15 VDB Drain-Body 25 15 22.5 VSB Source-Body 25 15 22.5 VGS Gate-Source 30/ - 25 25/ - 15 30/ - 22.5 VGB Gate-Body 30/ - 0.3 25/ - 0.3 30/ - 0.3 VGD Gate-Drain 30/ - 25 30/ - 15 30/ - 22.5 ABSOLUTE MAXIMUM SYMBOL PARAMETER VALUE UNIT ID Drain Current 50 mA Temperature Range T J Operating -55 to +85 oC TS Storage -55 to +150 Power Dissipation P D Package 640 (Ni\\ote 1) mW PD Each Device 300 (Note 2) Note 1: Linear Derating Factor - 10.7mW/oC above 25oC Note 2: Linear Derating Factor - 5.0mW/oC above 25oC