SD5300 CALOGIC | Alldatasheet
Document overview
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Technical content
Quad DMOS Analog Switch Driver "Improved Performance Over SD5000N and SD5400CY" SD5300
FEATURES
- • Low On Resistance
- • Low Insertion Loss
- • Low Capacitance
- • Input Transient Protection APPLICATION
- • Analog Switch Driver
- • Wide Band Dual Differential Amplifiers
DESCRIPTION
The Calogic SD5300 is a monolithic array of 20V enhancement-mode DMOS FET analog switch drivers. The SD5300 is manufactured with implanted high-speed, high-voltage and low resistance double-diffused MOS (DMOS) process, and was designed to drive DMOS and other analog switches. The devices are available in 16-pin plastic DIP package and in a die form for hybrid applications. Custom devices based on SD5300 can also be ordered.
ORDERING INFORMATION
Part Package Temperature Range SD5300Y SOIC -55 oC to +125oC SD5300N Plastic DIP -55 oC to +125oC XSD5300 Sorted Chips in Carriers -55oC to +125oC CORPORATION TOP VIEW N/C N/C N/C SUBSTRATE D 2 D 1 D4 D 3 TOP VIEW NC Body FUNCTIONAL BLOCK DIAGRAM SO PIN CONFIGURATION SUBSTRATE 4SD4 D 3 D 2 D 1 DUAL IN LINE PACKAGE PIN CONFIGURATION CD9
ELECTRICAL CHARACTERISTICS (TA = 25oC, unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS BV DS Drain-Source Breakdown Voltage 20 25 V ID = 10µA, VGS = VBS = 0 BV SB Source-Substrate Breakdown Voltage 20 25 I S = 10µA, VGS = 0, Drain Open IGBS Gate-Body Leakage Current 1.0 µAV GB = 25V, VDB = VSB = 0 V GS(th) Gate-Source Threshold Voltage 0.5 2.0 V V DS = VGS , ID = 1.0µA, VSB = 0 rDS(on) Drain-Source ON Resistance 40 45 ohms VGS = 5V, ID = 1mA, VSB = 0 22 25 V GS = 10V, ID = 1mA, VSB = 0 17 20 V GS = 15V, ID = 1mA, VSB = 0 15 17 V GS = 20V, ID = 1mA, VSB = 0 gfs Common-Source Forward Transconductance 10 12 mmhos V DS = 10V, ID = 20mA, f = 1KHz, VSB = 0 c(ga+gd+gb) Gate Node Capacitance 2.4 3.7 pF f = 1MHz, V DS = 10V, VGS = VBS = -15Vc(gd+db) Drain Node Capacitance 1.3 1.7 c(gs+sb) Source Node Capacitance 3.5 4.5 c(dg) Reverse Transfer Capacitance 0.3 .7 C T Cross Talk -107 dB ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAX. VALUE UNITS Breakdown Voltage Drain-Source Source-Drain Drain-Substrate Source-Substrate Gate-Source Gate-Substrate Gate-Drain VDS VSD VDB VSB VGS VGB VGD 25/-.3 V Continuous Drain Current ID 50 mA ABSOLUTE MAXIMUM PARAMETER SYMBOL MAX. VALUE UNITS Drain Current I D 50 mA Temperature Range Operating Storage TJ TS -55 to +85 -55 to +150 oC Power Dissipation Package Each Device PD PD 640 (Note 1) 300 (Note 2) mW Notes: 1. Linear Derating Factor – 10.7mW/oC above 25oC 2. Linear Derating Factor – 5.0mW/oC above 25oC
SWITCHING WAVEFORMTEST CIRCUIT SWITCHING CHARACTERISTICS SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS td(on) Turn-on Time 0.7 1.5 ns R L = 680Ω , RG = 51 tr Rise Time 0.8 1.5 V DD = 5V toff * Turn-off Time 10.0 V G(on) = 10V * toff is dependent on RL and C and does not depend on the device characteristics. 51Ω VIN TO SCOPE DD+V V OUT TO SCOPE Input Pulse tr,tp <1nec Rep rate = 1MHz Sampling Scope R L tr <350psec RIN = 1MΩ CIN = 2pF 90% 50% 10% 90% 50% 10% 10% 90% tr tOFF +5V OV OV VIN DD+V VOUT Td (ON)