SD200 CALOGIC | Alldatasheet
Document overview
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Technical content
N-Channel Enhancement-Mode DMOS FETS SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203
FEATURES
(SD202, SD203, SSTSD203) Low Interelectrode Capacitances
APPLICATIONS
- • High Gain VHF/UHF Amplifiers
- • Oscillators
- • Mixers
DESCRIPTION
The SD200 series is manufactured utilizing Calogic’s proprietary DMOS design and processing techniques. The device is designed to operate well through 1 GHz while maintaining excellent frequency response, power gain, and low noise. The DMOS structure is an inherently low capacitance and very high speed design resulting in a device that bridges JFETS and GaAs products in performance characteristics.
ORDERING INFORMATION
Part Package Temperature Range SD200DC 4 Lead TO-52 Package -55 oC to +125oC SD201DC 4 Lead TO-52 Package -55 oC to +125oC SD202DC 4 Lead TO-52 Package -55 oC to +125oC SD203DC 4 Lead TO-52 Package -55 oC to +125oC SSTSD201 Surface Mount SOT-143 -55 oC to +125oC SSTSD203 Surface Mount SOT-143 -55 oC to +125oC XSD200 Sorted Chips in Carriers -55 oC to +125oC XSD201 Sorted Chips in Carriers -55 oC to +125oC XSD202 Sorted Chips in Carriers -55 oC to +125oC XSD203 Sorted Chips in Carriers -55 oC to +125oC CORPORATION PIN CONFIGURATION SCHEMATIC DIAGRAM (3) GATE (2) DRAIN (1) SOURCE BODY INTERNALLY CONNECTED TO CASE. DIODE PROTECTION ON SD201/SD203 ONLY. (4) CASE, BODY G D CASE, B S CD10-1 SD201, SD203, zener protected CD10-2 SD202, SD204, non-zener BODY (4) SOURCE (1) DRAIN (2) GATE (3) SOT-143 PART MARKINGS (SOT-143) P/N MARKING SSTSD201 201 SSTSD203 203
SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 CORPORATION ABSOLUTE MAXIMUM RATING (TA = +25oC unless otherwise noted) PARAMETER SD200 SD201 SD202 SD203 UNIT Breakdown Voltages VDS +25 +25 +20 +20 V VDB +25 +25 +20 +20 V +20 +20 V +20 +20 V +20 +20 V PD Power Dissipation (at or below TA = +25C) . . . 360 mW Tj Operating Junction SYMBOL PARAMETER 200, 201 202, 203 UNIT TEST CONDITIONS MIN TYP MAX MIN TYP MAX STATIC BV DS Drain-Source Breakdown Voltage 25 30 20 25 V I D = 1.0µA, VGS = VBS = 0 BV DB Drain-Body Breakdown Voltage 25 20 V ID = 1.0µA, VGB = 0 Source OPEN ID(OFF) Drain-Source OFF Current 1.0 µA VDS = 25 V VGS = VBS = 0
1.0 V DS = 20 V
SD200 ±0.1 nA V GV = ±40 V VDB = VSB = 0SD202 ±0.1 SD201 1.0 µAV GB = 20 V SD203 1.0 rDS(ON) Drain-Source ON Resistance 40 70 35 50 ohms V GS = 5 V, ID = 1 mA, VSB = 0 DYNAMIC gfs Common-Source Forward Transcondconductance 13 14 17 20 mS ID = 20 mA, VDS = 15 V f = 1 KHz, VSB = 0 ciss Common-Source Input Capacitance 2.4 3.0 3.0 3.6 pF ID = 20 mA VDS = 15 V f = 1 MHz VSB = 0 coss Common-Source Output Capacitance 1.0 1.2 1.0 1.2 VGS = 0 crss Common-Source Reverse Transfer Capacitance 0.2 0.3 0.2 0.3 G ps Common-Source Power Gain 8.0 10 8.0 10 dB VDS = 15 V f = 1 GHz ID = 20 mA VSB = 0 NF Noise Figure 4.5 6.0 4.0 5.0 Pi Intercept Point 29 29 dBm Δ f = 2 MHz ELECTRICAL CHARACTERISTICS (T A = +25oC unless otherwise noted)