SCM100N65CT GWSEMI | Alldatasheet

Document overview

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Technical content

Features

 Low on-resis tance RDS(on)  Best thermal conductivity and behavior  High speed switching  Low capacitances and low gate charge  Low gate resistance for high -frequency switching  Easy to parallel  Halogen Free, R oHS C ompliant

Applications

 Switchi ng mode power supply  PV inverter  Uninterruptibl e Power Su pply  Motor Drives  DC/DC c onverters  EV charging TO-220 1 2 Circuit Diagram *1: Gate Drain Source Body Diode 1 *1 Symbol Parameter Value Unit Test Condition VDSS Drain -Source voltage 650 V Ta = 25°C, VGS = 0V, ID = 1mA VGSS Gate -Source voltage (DC) -4 to 22 V static ID Continuou s Drain Current 25

15 A VGS = 15V, TC = 25°C

VGS = 15V, TC = 100°C Tj Junction temperature 175 °C TSTG Storage temperature -55/+1 75 °C Thermal characteristics Symbol Parameter Typ. Units Rth (JC) Thermal r esistance, jun ction -case 1.2 °C /W

Electrical Characteristics (Ta = 25 °C) Symbol Parameter Min. Typ. Max. Units Test Con dition V(BR) DSS Drain -Source breakdown vol tage 650 - - V VGS = 0V, ID = 1mA IDSS Zero gate voltage drain current - 0.01 - uA VDS = 650V, VGS = 0V, Tj = 25 °C VDS = 650V, VGS = 0V, Tj = 150°C RDS(on) Drain -Source on-state resistance - 100 132 130 mΩ VGS = 18V, ID = 10A, Tj = 25°C VGS = 18V, ID = 10A, Tj = 125°C VGS(th) Gate threshold voltage 2.7 - 5.7 V VDS = 10V, ID = 5 mA IGSS+ Gate-Source leakage current - 1 10 nA VGD = 20V, VDS = 0V IGSS- Gate-Source leakage current - -1 -10 nA VGD = -4V, VDS = 0V RG Gate resistance - 3 - Ω f = 1MHz, open drain gfs Transconductance - 4.3 - S VDS = 10V, ID = 10A Electrical C haracteristics (Ta = 25 °C) Symbol Parameter Min. Typ. Max. Units Test Condition Ciss Input capacitance - 774 - pF VGS = 0V, VDS = 500V, f = 1MHz Coss Output capacitance - 68.4 - pF VGS = 0V, VDS = 500V, f = 1MHz Crss Reverse capacit ance - 16.7 - pF VGS = 0V, VDS = 500V, f = 1MHz Co(er) Effective output capacitance, energy related - 62 - pF VGS = 0V, VDS = 0V to 300V td(on) Turn-on delay time - 7.3 - ns VDD = 300V ID = 10A VGS = 18V RL = 30Ω RG = 10Ω tr Rise time - 4.9 - ns Td(off) Turn-off del ay time - 23 - ns tf Fall time - 8.1 - ns Qg Total gate charge 42 nC VDD = 300V ID = 10A VGS = 18V Qgs Gate to source charge 9 nC Qgd Gate to drain charge 16.4 nC V(pla teau) Gate pla teau voltage 9.13 V VDD = 300V, ID = 10A Body diode Electrical Characteristics (Ta = 25 °C) Symbol Parameter Min. Typ. Max. Units Test Condition VSD Diode forward voltage - 3.2 5.85 V VGS = 0V, IS = 10A trr Reverse recovery time - 52 - ns IF = 10A, VR = 300V di/dt = 1100A/us Qrr Reverse recovery charge - 74 - nC Irrm Peak reverse recovery current - 7 - A

Typical Output Characteristics (I) Typical Output Characteristics (II) Typical Transfer Characteristics (I) Typical Transfer Characteristics (II) Typical Capacitance vs. Drain – Source Voltage Dynamic Input Characteristics

Symbol Dimensions In Millimeters Symbol Dimensions In Millimeters A 4.24 4.44 4.64 E2 - - 0.76 A2 2.30 2.48 2.70 e 2.54BSC b 0.70 0.80 0.90 e1 5.08BSC E1 6.86 7.77 8.89