SCH2825 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.
  • [MOSFET]
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • [SBD]
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 1.6 A Drain Current (Pulse) I DP PW≤10µs, duty cycle≤1% 6.4 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage V RSM 30 V Average Output Current I O 0.5 A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 3 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Marking : XA SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1207PE TI IM TC-00001031 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SCH2825 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

Applications

No. A1006-2/6 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS VDS=30V, VGS=0V 1 µA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance ⏐yfs⏐ VDS=10V, ID=800mA 0.6 1.0 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=800mA, VGS=10V 135 180 m Ω RDS(on)2 I D=400mA, VGS=4V 230 330 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 88 pF Output Capacitance Coss V DS=10V, f=1MHz 19 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 11 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 3.4 ns Rise Time t r See specified Test Circuit. 3.5 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 10.6 ns Fall Time t f See specified Test Circuit. 4.0 ns Total Gate Charge Qg V DS=10V, VGS=10V, ID=1.6A 2.0 nC Gate-to-Source Charge Qgs V DS=10V, VGS=10V, ID=1.6A 0.33 nC Gate-to-Drain “Miller” Charge Qgd V DS=10V, VGS=10V, ID=1.6A 0.29 nC Diode Forward Voltage V SD IS=1.6A, VGS=0V 0.82 1.2 V [SBD] Reverse Voltage V R IR=0.5mA 30 V Forward Voltage V F IF=0.5A 0.42 0.48 V Reverse Current I R VR=15V 120 µA Interterminal Capacitance C V R=10V, f=1MHz 13 pF Reverse Recovery Time t rr IF=IR=100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm (typ) 7028-003 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 654 123 Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain

No. A1006-3/6 Switching Time Test Circuit t rr Test Circuit [MOSFET] [SBD] Duty≤10% 50Ω 100Ω 10Ω --5V trr 10µs 100mA100mA 10mA PW=10µs D.C.≤1% P.G 50Ω G S D ID=800mA RL=18.75Ω VDD=15V VOUT SCH2825 VIN 10V VIN ID -- VDS ID -- VGS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V 0.2 1.2 0.8 1.6 0.6 0.4 1.4 1.0 1.8 0.2 1.2 0.8 1.6 0.6 0.4 1.4 1.0 2.0 1.8 IT13107 IT13108 Ta= --2 5°C VDS=10V 15.0V 4.0V 8.0V 6.0V 10.0V VGS=2.5V 3.0V 3.5V RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C IT13132 02468 1 6 10 12 14 IT13131 390 150 120 180 240 300 210 270 330 360 390 150 120 180 240 300 210 270 330 360 Ta=25°C - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 VGS=10V , ID=0.8A VGS=4V , I D=0.4A ID=0.4A 0.8A [MOSFET] [MOSFET] [MOSFET][MOSFET]

No. A1006-4/6 IS -- VSD⏐yfs⏐ -- ID Forward Transfer Admittance, ⏐yfs⏐ -- S Drain Current, ID -- A Source Current, IS -- A Diode Forward V oltage, VSD -- V SW Time -- ID Ciss, Coss, Crss -- VDS A S OVGS -- Qg Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V IT13133 VDS=10V ID=1.6A IT13111 1.0 IT13113 23 50.1 1.0 35 2 7 td(on) td(off) tf tr VDD=15V VGS=10V 0.001 1.0 0.0123 5 7 2 0.135 7 2 1.035 7 0.1 0.01 VDS=10V 25°CTa= --25 75°C 01 0 3 0 15 2052 5 100 IT13114 Ciss Coss Crss f=1MHz IT13112 0.001 0.01 0.1 1.0

2 VGS=0V

Ta= --25 IT13134 0.1 1.0 0.01 223 5 723 5 7 1.0 235 7 100.1 0.1 Operation in this area is limited by RDS(on). 100ms 100 µs 10msDC operation (Ta=25 °C) 1ms IDP=6.4A ID=1.6A PW≤10µs Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 20 40 0.2 0.1 0.4 0.3 0.6 0.5 0.7 60 80 100 120 140 160 IT13135 Mounted on a ceramic board (900mm 2✕0.8mm) 1unit [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET]

No. A1006-5/6 100 0.1 1.0 23 5 7 1023 5 23 5 77 C -- VR 0.1 0.2 0.30 0.35 0.25 0.15 0.10 0.05 0.20 0.3 0.4 0.5 0.6 PF(AV) -- IO IT08187 IT07891 (2) (4) (3)(1) f=1MHz 1.0 0.1 0.01 0.3 0.40.1 0.2 0.60.5 IF -- VF Ta=125 100 IT07927 IT07928 1.0 100 1000 100000 10000 51 0 3 0 15 20 25 IR -- VR Ta=125°C 25°C 50°C 75°C 100°C IS 20ms t 7 0.01 23 7 0.1 52 3 7 1.052 3 3.0 3.5 2.0 1.0 2.5 1.5 0.5 ID00338 IFSM -- t [SBD] [SBD] [SBD][SBD] [SBD] Forward V oltage, VF -- V Forward Current, IF -- A Reverse V oltage, VR -- V Reverse Current, IR -- µA Average Output Current, IO -- A (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangular wave IS 20ms t Time, t -- s Surge Forward Current, IFSM(Peak) -- A Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF Current waveform 50Hz sine wave

No. A1006-6/6 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS Note on usage : Since the SCH2825 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice.