SCH2819 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting.
  • [MOSFET]
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive.
  • [SBD]
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±12 V Drain Current (DC) I D 1.5 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 6 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V Average Output Current I O 0.5 A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 3 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Marking : QU SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PE MS IM TB-00001351 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

Applications

No.8291-2/6 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =800mA 1.3 2.2 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =800mA, VGS =4V 165 215 m Ω R DS (on)2 I D =400mA, VGS =2.5V 210 295 m Ω Input Capacitance Ciss V DS =10V, f=1MHz 130 pF Output Capacitance Coss V DS =10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 16 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 9 ns Rise Time t r See specified Test Circuit. 20 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 23 ns Fall Time t f See specified Test Circuit. 29 ns Total Gate Charge Qg V DS =10V, VGS =4V, ID =1.5A 2.2 nC Gate-to-Source Charge Qgs V DS =10V, VGS =4V, ID =1.5A 0.52 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =4V, ID =1.5A 0.52 nC Diode Forward Voltage V SD IS=1.5A, VGS =0V 0.9 1.2 V [SBD] Reverse Voltage V R IR =0.5mA 30 V Forward Voltage V F IF=0.5A 0.42 0.48 V Reverse Current I R VR =15V 120 µA Interterminal Capacitance C V R =10V, f=1MHz 13 pF Reverse Recovery Time t rr IF=IR =100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 7028-003 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 654 123 Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain

No.8291-3/6 Switching Time Test Circuit t rr Test Circuit [MOSFET] [SBD] Duty≤10% 50Ω 100Ω 10Ω --5V trr 10µs 100mA100mA 10mA PW=10 µs D.C.≤1% P.G 50Ω G S D ID =800mA R L=18.75Ω VDD =15V VOUT SCH2819 VIN VIN R DS (on) -- VGS IT06104 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 100 200 300 400 500 150 250 350 450 ID -- VDS IT06102 02468 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 ID -- VGS IT06103 R DS (on) -- Ta IT06105 100 200 300 400 500 150 250 350 450 V GS =1.0V 4.0V 3.0V 2.5V 1.5V V DS =10V --25 Ta= --25 Ta= Ta=25°C 400mA ID =800mA ID=400mA, V GS =2.5V ID =800mA, V GS =4.0V [MOSFET] [MOSFET] [MOSFET][MOSFET] Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ

No.8291-4/6 0.01 0.123 5 7 1.023 5 7 23 5 7 10 1000 100 1.0 SW Time -- ID IT06108 IT06106 0.1 1.023 5 70.01 23 5 7 23 5 1.0 0.1 yfs -- ID Ciss, Coss, Crss -- VDS IT06107 0.01 0.1 1.0 IS -- VSD 0 5 10 15 20 25 30 IT06109 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS -- Qg IT06110 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 PD -- Ta IT09564 A S O 1.0 0.1 0.01 1.0 23 5 7 100.1 23 5 70.01 23 5 7 23 5 IT09563 V DS =10V 75°C 25°C Ta= -- 25°C V GS =0V --25 Ta=75 V DD =15V V GS =4V td(on) td(off) tr tf f=1MHz Coss Crss Ciss V DS =10V ID =1.5A <10µsIDP =6A ID =1.5A 100 µs1ms 10ms 100msDC operation (Ta=25 °C)Operation in this area is limited by RDS (on). [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] [MOSFET] Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 250.8mm) 1unit Ta=25°C Single pulse Mounted on a ceramic board (900mm 25 0.8mm) 1unit

No.8291-5/6 100 0.1 1.023 5 7 1023 5 23 5 77 C -- VR 0.1 0.2 0.30 0.35 0.25 0.15 0.10 0.05 0.20 0.3 0.4 0.5 0.6 PF(AV) -- IO IT08187 IT07891 (2) (4)(3)(1) f=1MHz 1.0 0.1 0.01 0.3 0.40.1 0.2 0.60.5 IF -- VF Ta=125 100 IT07927 IT07928 1.0 100 1000 100000 10000 51 0 3 0 15 20 25 IR -- VR Ta=125°C 25°C 50°C 75°C 100°C IS 20ms t 7 0.01 23 7 0.1 52 3 7 1.052 3 3.0 3.5 2.0 1.0 2.5 1.5 0.5 ID00338 IFSM -- t [SBD] [SBD] [SBD][SBD] [SBD] Forward V oltage, VF -- V Forward Current, IF -- A Reverse V oltage, VR -- V Reverse Current, IR -- µA Average Output Current, IO -- A (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangular wave IS 20ms t Time, t -- s Surge Forward Current, IFSM (Peak) -- A Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF Current waveform 50Hz sine wave

No.8291-6/6 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS Note on usage : Since the SCH2819 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.