SCH2815 SANYO | Alldatasheet

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Technical content

Features

  • Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package facilitating high-density mounting.
  • [MOSFET]
  • 1.5V drive.
  • [SBD]
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage (*1) V GSS 10 V Drain Current (DC) I D 0.7 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 2.8 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V Average Output Current I O 150 mA Surge Forward Current I FSM 50Hz sine wave, 1 cycle 2 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Marking : QQ (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 91306PE MS IM TC-00000165

No. A0369-2/6 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 30 V Zero-Gate Voltage Drain Current I DSS VDS =30V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =8V, VDS =0V 1 µA Cutoff Voltage V GS (off) V DS =10V, ID =100µA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =350mA 0.45 0.8 S R DS (on)1 I D =350mA, VGS =4V 0.7 0.9 Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =200mA, VGS =2.5V 0.8 1.15 Ω R DS (on)3 I D =10mA, VGS =1.5V 1.6 2.4 Ω Input Capacitance Ciss V DS =10V, f=1MHz 30 pF Output Capacitance Coss V DS =10V, f=1MHz 7 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 3.5 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 8 ns Rise Time t r See specified Test Circuit. 6 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 10 ns Fall Time t f See specified Test Circuit. 8 ns Total Gate Charge Qg V DS =10V, VGS =4V, ID =0.7A 1 nC Gate-to-Source Charge Qgs V DS =10V, VGS =4V, ID =0.7A 0.4 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =4V, ID =0.7A 0.2 nC Diode Forward Voltage V SD IS=0.7A, VGS =0V 0.93 1.2 V [SBD] Reverse Voltage V R IR =0.5mA 15 V Forward Voltage VF1I F=100mA 0.32 0.35 V VF2I F=150mA 0.35 0.40 V Reverse Current I R VR =6V 45 µA Interterminal Capacitance C V R =10V, f=1MHz 9 pF Reverse Recovery Time t rr IF=IR =10mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm (typ) 7028-003 12 3 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6

No. A0369-3/6 PW=10 µs D.C.≤1% P. G 50Ω G S D ID =350mA R L=42Ω VDD =15V VOUT SCH2815 VIN VIN Duty≤10% 50Ω 100Ω 10Ω --5V trr 10mA10mA 1mA 10µs Switching Time Test Circuit t rr Test Circuit [MOSFET] [SBD] Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS IT10876 Ambient Temperature, Ta -- °C R DS (on) -- Ta IT10877 Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT07510 Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A IT07511 0.1 1.00 1.0 0.50 0.2 0.1 0.2 0.3 0.4 0.4 0.6 0.8 Ta= --25 --25 Ta=75 V DS =10V 2.0 3.0 4.0 5.0 Ta=25°C ID =200mA 350mA --40--60 --20 0 20 40 60 80 100 120 140 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω 6.0V 4.0V 3.5V 3.0V 2.5V 2.0V V GS =1.5V ID =200mA, V GS =2.5V ID =350mA, V GS =4.0V

No. A0369-4/6 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT10878 IT07520 IT07521 R DS (on) -- ID Drain Current, ID -- A 1.0 23 5 7 23 5 70.01 0.1 1.0 IT07519 Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF 0.1 23 1.05 7 Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns IT07516 IT07515Diode Forward V oltage, VSD -- V IS -- VSD Drain Current, ID -- A IT07514 0.01 0.1 0.123 5 7 23 5 7 1.0 1.0 Forward Transfer Admittance, yfs -- S yfs -- ID 0.01 1.0 0.1 Source Current, IS -- A V DS =10V 25°C Ta= --25 75°C V GS =0V --25 V DD =15V V GS =4V td(off) tf td(on) tr V DS =10V ID =0.7A Ta=75°C 25°C --25°C V GS =4V R DS (on) -- ID Drain Current, ID -- A 1.0 23 5 7 23 5 70.01 0.1 1.0 R DS (on) -- ID Drain Current, ID -- A 1.0 23 5 7 230.01 0.1 Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ta= Ta=75°C --25°C 25°C V GS =2.5V V GS =1.5V Ta=75°C --25°C 25°C 03 0 10 15 20 255 IT08960 1.0 100 Ciss Coss Crss f=1MHz

No. A0369-5/6 20 40 60 80 100 120 0.2 0.4 0.6 0.8 140 160 IT10880 IT10879 0.1 1.0 0.01 1.0 20.1 23 5 7 10 235 35 7 IDP =2.8A ID =0.7A Operation in this area is limited by RDS (on). 100 µs 100msDC operation (Ta=25 °C) 1ms10ms ≤10µs [MOSFET] [MOSFET] PD -- TaA S O M ounted on a ceramic board (900mm 250.8mm) 1unit Ambient Temperature, Ta -- °CDrain-to-Source V oltage, VDS -- V Allowable Power Dissipation, PD -- W Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm25 0.8mm) 1unit C -- VR IR -- VR PF(AV) -- IO IF -- VF Forward V oltage, VF -- V Forward Current, IF -- mA Reverse V oltage, VR -- V Reverse Current, IR -- µA Average Output Current, IO -- A Average Forward Power Dissipation, PF(A V) -- W Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF 1.0 0.3 0.40.1 0.2 100 0.60.5 Ta=125 100 IT06808 IT06810 IT06809 IT06811 1.0 10 35 7 2 30 0.1 0.4 0.2 0.5 0.3 0.1 (1) (2) (4)(3) f=1MHz 1.0 100 1000 10000 2 4 6 8 10 12 14 16 Ta=125°C 25°C 50°C 75°C 100°C (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° θ 360° Rectangular wave 180° 360° Sine wave 2 1.032 3 5727 0.135 70.01 0.4 0.8 2.0 2.4 1.2 1.6 2.8 ID00268 IFSM -- t Time, t -- s Surge Forward Current, IFSM (Peak) -- A IS 20ms t Current waveform 50Hz sine wave

No. A0369-6/6 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS Note on usage : Since the SCH2815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice.