SCH2806 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Composite type with an N-channel silicon MOSFET (SCH1406) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. [MOSFET]
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.8V drive. [SBD]
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 1.2 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 4.8 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 1unit 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +125 °C [SBD] Repetitive Peak Reverse Voltage V RRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V Average Output Current I O 0.5 A Surge Forward Current I FSM 50Hz sine wave, 1 cycle 3 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Marking : QF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

53104 TS IM TA-101080

No.7744-2/6 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 20 V Zero-Gate Voltage Drain Current I DSS VDS =20V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =1A 1.9 2.8 S R DS (on)1 I D =1A, VGS =4V 160 210 m Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =0.5A, VGS =2.5V 200 280 m Ω R DS (on)3 I D =0.1A, VGS =1.8V 280 390 m Ω Input Capacitance Ciss V DS =10V, f=1MHz 100 pF Output Capacitance Coss V DS =10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 15 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 5.5 ns Rise Time t r See specified Test Circuit. 18 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 17 ns Fall Time t f See specified Test Circuit. 8 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =1.2A 4.5 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =1.2A 0.4 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =1.2A 0.4 nC Diode Forward Voltage V SD IS=1.2A, VGS =0 0.9 1.2 V [SBD] Reverse Voltage V R IR =0.5mA 15 V Forward Voltage V F IF=0.5A 0.4 0.44 V Reverse Current I R VR =6V 90 µA Interterminal Capacitance C V R =10V, f=1MHz 13 pF Reverse Recovery Time t rr IF=IR =100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 2230 12 3 5 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 1.6 1.6 1.50.05 0.5 0.05 0.56 0.25 0.2 0.15 1 32 64 5 Top View Side View Side View Bottom View

No.7744-3/6 PW=10 µs D.C.≤1% P. G 50Ω G S D ID =1A R L=10Ω VDD =10V VOUT SCH2806 VIN VIN Duty≤10% 50Ω 100Ω 10Ω --5V trr 100mA100mA 10mA 10µs Switching Time Test Circuit t rr Test Circuit [MOSFET] [SBD] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 0.4 0.8 1.6 2.0 0.2 1.2 ID -- VDS V GS =1.0V 1.5V 2.5V IT02983 ID -- VGS V DS =10V 25°C --25 --25 Ta=75 Ta=75 IT02984 25°C R DS (on) -- Ta IT02986 100 150 200 250 300 350 ID=1.0A, V GS=4.0V ID=0.5A, V GS=2.5V 02468 1 0 R DS (on) -- VGS IT02985 100 150 200 250 300 350 400 Ta=25°C ID =0.5A 1.0A 3.0V 4.0V 6.0V 10.0V [MOSFET] [MOSFET] [MOSFET][MOSFET] Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C

No.7744-4/6 IT06931 IT06930 012345 VGS -- Qg V DS =10V ID =1.2A IT02991 1.0 100 SW Time -- ID V DD =10V V GS =4V td(on) td(off) tr tf IT02989 IT02987 0.01 0.123 5 70.001 23 5 7 1.023 5 7 5 23 0.1 1.0 23 5 7 23 5 0.01 0.1 1.0 yfs -- ID V DS =10V 75°C Ta= --25 02468 1 0 1 2 1 4 1 6 1 8 2 0 100 Ciss, Coss, Crss -- VDS f=1MHz Ciss Coss Crss IT02990 IT02988 0.01 0.1 1.0 IF -- VSD V GS =0 --25 Ta=75 20 40 0.2 0.4 0.6 0.8 60 80 100 120 140 160 PD -- Ta A S O 1.0 0.1 0.01 0.1 23 5 7 1.00.01 23 5 7 23 5 7 10 23 IDP =4.8A ID =1.2A Operation in this area is limited by RDS (on). 100 µs 100ms DC operation 1ms 10ms <10µs 25°C [MOSFET] [MOSFET] [MOSFET][MOSFET] [MOSFET] [MOSFET] [MOSFET] Mounted on a ceramic board(900mm 250.8mm) 1unit Total Gate Charge, Qg -- nC Ambient Temperature, Ta -- °C Drain-to-Source V oltage, VDS -- V Gate-to-Source V oltage, VGS -- VAllowable Power Dissipation, PD -- W Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ta=25°C Single pulse Mounted on a ceramic board(900mm25 0.8mm) 1unit

No.7744-5/6 1.0 0.1 0.01 0.3 0.40.1 0.2 0.5 IF -- VF Ta=125 100 IT06804 IT06806 IT06805 IT06807 1.0 100 1000 10000 51 0 1 5 IR -- VR Ta=125°C 25°C 50°C 75°C 100°C 1.0 10 35 7 2 3 C -- VR 180° 360° θ 360° 0.2 0.8 0.9 0.6 0.4 0.2 0.7 0.5 0.3 0.1 PF(AV) -- IO [SBD] [SBD] [SBD][SBD] [SBD]Ê IS 20ms t 7 0.01 23 7 0.1 52 3 7 1.052 3 3.0 3.5 2.0 1.0 2.5 1.5 0.5 ID00338 IFSM -- t Time, t -- s Surge Forward Current, IFSM (Peak) -- A Forward V oltage, VF -- V Forward Current, IF -- A Reverse V oltage, VR -- V Reverse Current, IR -- µA Average Forward Current, IO -- A (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° Average Forward Power Dissipation, PF(A V) -- W Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF Rectangular wave Sine wave Current waveform 50Hz sine wave

No.7744-6/6 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2004. Specifications and information herein are subject to change without notice. PS