SCH2315 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.8V drive.
  • Composite type with two MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS V Drain Current (DC) ID --0.9 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --3.6 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm20.8mm) 1unit 0.65 W Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --12 V Zero-Gate Voltage Drain Current IDSS VDS=--12V, VGS=0 --10 µA Gate-to-Source Leakage Current IGSS VGS=±6.4V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--6V, ID=--100µA --0.3 --1.0 V Forward Transfer Admittance yfs VDS=--6V, ID=--500mA 0.6 S RDS(on)1 ID=--500mA, VGS=--4.5V 470 615 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 ID=--300mA, VGS=--2.5V 690 970 mΩ RDS(on)3 ID=--100mA, VGS=--1.8V 920 1380 mΩ Input Capacitance Ciss VDS=--6V, f=1MHz pF Output Capacitance Coss VDS=--6V, f=1MHz 26.5 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz pF Marking : MQ Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21505PE TS IM TB-00001058 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SCH2315 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No.8222-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 8.2 ns Rise Time tr See specified Test Circuit. 3.5 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 9.5 ns Fall Time tf See specified Test Circuit. 15.5 ns Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--0.9A 1.43 nC Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--0.9A 0.31 nC Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--0.9A 0.26 nC Diode Forward Voltage VSD IS=--0.9A, VGS=0 --0.98 --1.5 V Package Dimensions Switching Time Test Circuit unit : mm 2245 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6 1.6 1.6 1.5 0.05 0.5 0.05 0.56 0.25 0.2 0.2 PW=10µs D.C.≤1% P.G 50Ω G S D ID= --0.5A RL=12Ω VDD= --6V VOUT SCH2315 VIN --4.5V VIN ID -- VDS ID -- VGS Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.2 --0.4 --0.6 --0.9 --0.8 --0.1 --0.3 --0.5 --0.7 --0.1 --0.2 --0.4 --0.9 --0.8 --0.2 --0.3 --0.5 --0.7 --0.6 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 --1.5V --1.8V --2.5V --3.0V --4.5V --6.0V IT09195 --0.5 --1.0 --1.5 --2.0 --2.5 IT09196 VGS= --1.0V VDS= --10V 25°C --25°C Ta=75°C 75°C Ta= --25°C 25°C --60 --40 --20 100 120 140 160 --1 --3 --2 --4 --5 --6 IT09197 200 400 600 1000 800 1200 1400 1600 1800 2000 IT09198 Ta=25°C --500mA --300mA ID= --100mA 200 400 600 1000 800 1200 1400 2000 1600 1800 ID= --300mA, VGS= --2.5V ID= --500mA, VGS= --4.5V ID= --100mA, VGS= --1.8V

No.8222-3/4 VGS -- Qg PD -- Ta A S O SW Time -- ID Ciss, Coss, Crss -- VDS yfs -- ID IF -- VSD Total Gate Charge, Qg -- nC Gate-to-Source Voltage, VGS -- V Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward Voltage, VSD -- V Forward Current, IF -- A Drain-to-Source Voltage, VDS -- V Ciss, Coss, Crss -- pF Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 0.2 0.4 0.6 0.8 1.6 1.4 1.2 1.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.5 --4.0 IT09203 --1.0 --0.1 --0.01 --0.1 5 7 --1.0 --0.01 5 7 5 7 --10 IT09204 Operation in this area is limited by RDS(on). 100ms 1ms 10ms <10µs --0.01 --0.1 --1.0 100 0.1 1.0 VDD= --6.0V VGS= --4.5V td(on) td(off) tr tf IT09201 IT09199 --0.001 --0.01 --0.1 --1.0 1.0 0.1 0.01 VDS= --10V 75°C 25°C Ta= --25°C IT09200 --0.25 --0.50 --0.75 --1.00 --1.25 --1.50 --0.001 --0.01 --1.0 --0.1 VGS=0 --25°C 25°C Ta=75°C --2 --4 --10 --8 --6 --12 100 f=1MHz Ciss Coss Crss IT09202 DC operation (Ta=25°C) IDP= --3.6A ID= --0.9A VDS= --6.0V ID= --0.9A 0.2 0.4 0.6 0.65 0.8 100 120 140 160 IT09205 100µs Ta=25°C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit Mounted on a ceramic board (900mm20.8mm) 1unit

No.8222-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS Note on usage : Since the SCH2315 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.