SCH1435

SCH1435 SANYO | Alldatasheet

Document overview

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Technical content

Features

• 1.8V drive.
• Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 3A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 12 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm ×0.8mm) 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage VGS(off) V DS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 2.7 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=1.5A, VGS=4.5V 68 89 mΩ RDS(on)2 I D=0.75A, VGS=2.5V 90 126 mΩ RDS(on)3 I D=0.3A, VGS=1.8V 130 195 mΩ Marking : ZL Continued on next page. 42110PE TK IM TC-00002319 SANYO Semiconductors DATA SHEET SCH1435 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1637-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Input Capacitance Ciss V DS=10V, f=1MHz 265 pF Output Capacitance Coss V DS=10V, f=1MHz 35 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 28 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 5.1 ns Rise Time tr See speci fi ed Test Circuit. 10 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 137 ns Fall Time tf See specifi ed Test Circuit. 36 ns Total Gate Charge Qg V DS=15V, VGS=4.5V, ID=3A 3.5 nC Gate-to-Source Charge Qgs V DS=15V, VGS=4.5V, ID=3A 0.57 nC Gate-to-Drain “Miller” Charge Qgd V DS=15V, VGS=4.5V, ID=3A 0.93 nC Diode Forward Voltage VSD IS=3A, VGS=0V 0.87 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7028-002 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 PW=10μs D.C.≤1% P. G 50Ω G S D ID=1.5A RL=10Ω VDD=15V VOUT SCH1435 VIN 4.5V VIN ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IT15268 --25 IT15269 2.5V 1.8V 4.5V Ta=75 VDS=10V 8.0V °CVGS=1.2V 6.0V 1.5V Ta=25°C

No. A1637-3/4 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT15272 IT15273 0.1 1.0 0.1 1.0 23 5 70.01 23 5 7 23 Ta= --25 VDS=10V 0.001 VGS=0V 0.1 1.0 23 5 7 23 7 5 VDD=15V VGS=4.5V td(on) td(off) tf IT15274 1234 100 51 0 6789 Ciss Coss Crss IT15275 100 Ta=75 --25 f=1MHz tr 0246 1 0 8 200 100 150 250 300 100 250 200 150 IT15270 IT15271 ID=0.3A 1.5A Ta=25°C 0.75A 75°C 25°C 0.01 0.1 1.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 VGS=1.8V , I D=0.3A VGS=4.5V , ID=1.5A VGS=2.5V , ID=0.75A 0.1 1.0 0.01 23 5 5 32723 5 723 5 70.01 0.1 1.0 10 IT15277IT15276 1.0 0.5 3.5 3.0 2.5 2.0 1.5 4.5 4.0 100 μs 10ms 100ms Operation in this area is limited by RDS(on). ID=3A DC operation ( Ta=25 °C) IDP=12A (PW≤10μs)VDS=15V ID=3A 1ms Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm)

No. A1637-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of April, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the SCH1435 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT15278 20 40 60 80 100 140 120 1.0 0.6 0.4 0.8 0.2 160 When mounted on ceramic substrate (900mm2×0.8mm)