SCH1410 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • High-speed switching.
  • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D 2.0 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 8.0 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm25 0.8mm) 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 20 V Zero-Gate Voltage Drain Current I DSS VDS =20V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±8V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS =10V, ID =1A 2.1 3.5 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =1A, VGS =4V 115 150 m Ω R DS (on)2 I D =0.5A, VGS =2.5V 145 200 m Ω Input Capacitance Ciss V DS =10V, f=1MHz 190 pF Output Capacitance Coss V DS =10V, f=1MHz 40 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 25 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 9 ns Rise Time t r See specified Test Circuit. 25 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 25 ns Fall Time t f See specified Test Circuit. 18 ns Marking : KK Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82505PE MS IM TA-100787 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SCH1410 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No.8984-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =10V, VGS =4V, ID =2.0A 2.7 nC Gate-to-Source Charge Qgs V DS =10V, VGS =4V, ID =2.0A 0.6 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =4V, ID =2.0A 0.6 nC Diode Forward Voltage V SD IS=2.0A, VGS =0V 0.87 1.2 V Package Dimensions Switching Time Test Circuit unit : mm 7028-002 PW=10 µs D.C.≤1% P.G 50Ω G S D ID =1A R L=10Ω VDD =10V VOUT SCH1410 VIN VIN 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 0123456 100 150 200 250 300 789 1 0 0.5A ID =1.0A ID=0.5A, V GS =2.5V ID=1.0A, VGS =4.0V Ta=25°C - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 IT10058 0.4 0.2 0.6 0.8 1.4 1.6 1.8 2.0 0.2 1.2 1.0 0.5 1.0 2.0 2.5 3.0 1.5 V GS =1.5V 6.0V 2.0V 2.5V 4.0V IT02720 3.0V V DS =10V --25 °CTa=75 IT02721 IT10059 100 150 200 250 Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Ambient Temperature, Ta -- °C R DS (on) -- Ta Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A

No.8984-3/4 20 40 0.2 0.4 80 100 120 0.8 0.6 1.0 140 160 IT10061 100ms DC operation 1ms 10ms2 1.0 0.1 0.01 223 5 70.01 0.1 235 7 1.0 IT10060 Operation in this area is limited by RDS (on). ID =2A IDP =8A 100 µs 10µs 233 57 100 312 V DS =10V ID =2A IT02728 1.0 0.1 23 5 7 1.0 23 5 100 V DD =10V V GS =4V td(on) td(off) tr tf IT02726 100 1000 2015 f=1MHz Ciss Coss Crss IT02727 IT02724 0.01 0.1 1.023 5 723 5 7 23 5 1.0 V DS =10V 75°C 25°C Ta= --25 IT02725 0.01 0.1 1.0 V GS =0V --25 Ta=75 yfs -- ID Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board (900mm25 0.8mm) Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W Mounted on a ceramic board (900mm 250.8mm)

No.8984-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2005. Specifications and information herein are subject to change without notice. PS Note on usage : Since the SCH1410 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.