SCH1332 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.8V drive.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -20 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D - -2.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -10 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -20 V Zero-Gate Voltage Drain Current I DSS V DS=- -20V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -0.4 - -1.3 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -1.5A 2.2 3.8 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -1.5A, VGS=- -4.5V 73 95 mΩ RDS(on)2 I D=- -0.8A, VGS=- -2.5V 98 138 mΩ RDS(on)3 I D=- -0.3A, VGS=- -1.8V 140 215 mΩ Marking : YH Continued on next page. 72909PE TK IM TC-00002019 SANYO Semiconductors DATA SHEET SCH1332 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1528-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Input Capacitance Ciss V DS=- -10V, f=1MHz 375 pF Output Capacitance Coss V DS=- -10V, f=1MHz 77 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 58 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 8.1 ns Rise Time tr See speci fi ed Test Circuit. 26 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 43 ns Fall Time tf See specifi ed Test Circuit. 37 ns Total Gate Charge Qg V DS=- -10V, VGS=- -4.5V, ID=- -2.5A 4.6 nC Gate-to-Source Charge Qgs V DS=- -10V, VGS=- -4.5V, ID=- -2.5A 0.8 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -10V, VGS=- -4.5V, ID=- -2.5A 1.3 nC Diode Forward Voltage VSD IS=- -2.5A, VGS=0V - -0.82 - -1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7028-002 1.6 1.6 1.50.05 0.5 0.05 0.560.25 0.2 0.2 1 32 64 5 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --1.5A RL=6.67Ω VDD= --10V VOUT VIN --4V VIN SCH1332 ID -- VDS ID -- VGS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V --0.5 --1.0 --3.0 --2.0 --2.5 --1.5 IT13008 --1 --2 --3 --5 --4 --25 IT13009 --2.5V --1.5V --1.8V --3.0V Ta=75 VDS= --10V --8.0V VGS= --1.0V --4.5V

No. A1528-3/4 IS -- VSD Drain Current, ID -- A Diode Forward V oltage, VSD -- V SW Time -- ID Ciss, Coss, Crss -- VDS VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C IT13012 IT13013 0.1 1.0 Ta= --25 VDS= --10V --0.001 --0.01 VGS=0V VDD= --10V VGS= --4V td(on) td(off) tf IT13014 0 --2 --4 --6 1000 100 Ciss Coss Crss IT13015 100 Ta=75 --25 f=1MHz tr 75°C 25°C --0.1 --1.0 --10 05 1234 IT14850 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 VDS= --10V ID= --2.5A Source Current, IS -- A 100 200 150 250 300 150 100 200 250 IT14848 IT14849 ID= --0.2A --2.0A Ta=25°C --1.0A --60 --40 --20 0 20 40 60 80 100 120 140 160 VGS= --1.8V , I D= --0.2A VGS= --4.5V , ID= --2.0AVGS= --2.5V , ID= --1.0A A S O --0.1 --1.0 --0.01 23 5 3 2723 5 723 5 7--0.01 --0.1 --1.0 --10 IT14851 100 μs 10ms 100ms Operation in this area is limited by RDS(on). ID= --2.5A DC operation ( Ta=25 °C) IDP= --10A --10 PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) | yfs | -- ID Forward Transfer Admittance, | yfs | -- S 1ms

No. A1528-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of July, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the SCH1332 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT14852 20 40 60 80 100 140 120 1.2 1.0 0.6 0.4 0.8 0.2 160 When mounted on ceramic substrate (900mm2×0.8mm)