SCG2035 SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
0.65A, 20V , R DS(O/glyph1197) 350mΩ /glyph1197-Channel Enhancement MOSFET 20-Jul-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Reliable and Rugged /circle6 Green Device Available APPLICATION /circle6 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. MARKING
PACKAGE INFORMATION
(T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TA=25°C 0.65 A Continuous Drain Current 1, V GS @4.5V TA=70°C ID 0.52 A Pulsed Drain Current 3 IDM 1.6 A Power Dissipation T A=25°C P D 0.3 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Rating Thermal Resistance from Junction to Ambient 1 417 Thermal Resistance from Junction to Ambient 2 RθJA 833 °C / W Top View A L M C B D G H JF K E 1 2 A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.7 0.9 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.35 M 0.25 0.35 SOT-523
0.65A, 20V , R DS(O/glyph1197) 350mΩ /glyph1197-Channel Enhancement MOSFET 20-Jul-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS 20 - - V V GS =0, I D =250µA Gate Threshold Voltage V GS(th) 0.45 - 1 V V DS =VGS, ID =250µA Forward Transfer conductance g fs - 2 - S V DS =5V, I D =0.6A Gate-Body Leakage Current I GSS - - ±10 µA V GS =±12V TJ=25°C - - 1 Drain-Source Leakage Current TJ=70°C IDSS - - 25 µA V GS =0, V DS =16V - - 350 V GS =4.5V, ID =0.55A - - 700 V GS =2.5V, ID =0.45A Static Drain-Source On-Resistance 4 R DS(ON) - - 950 mΩ VGS =1.8V, ID =0.35A Total Gate Charge Q g - 1.3 - Gate-Source Charge Q gs - 0.5 - Gate-Drain (“Miller”) Change Q gd - 0.1 - nC ID =0.5A VDS =15V VGS =4.5V Turn-on Delay Time T d(on) - 2.6 - Rise Time Tr - 16 - Turn-off Delay Time T d(off) - 29.8 - Fall Time Tf - 11 - nS VDS =10V ID =0.5A VGS =10V RG =1Ω Input Capacitance C iss - 64 - Output Capacitance C oss - 17 - Reverse Transfer Capacitance C rss - 20 - pF VDS =10V VGS =0 f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 0.65 A Pulsed Source Current 3 I SM - - 1.6 A Forward On Voltage 4 V SD - - 1.2 V VGS =0, I S =0.15A Reverse Recovery Time trr - 4.9 - nS Reverse Recovery Charge Qrr - 1 - nC IF=0.5A , dI/dt=100A/µs , T J=25 ℃ Notes: 1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. The power dissipation is limited by 150 ℃ junction temperature 4. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
0.65A, 20V , R DS(O/glyph1197) 350mΩ /glyph1197-Channel Enhancement MOSFET 20-Jul-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES
0.65A, 20V , R DS(O/glyph1197) 350mΩ /glyph1197-Channel Enhancement MOSFET 20-Jul-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVES