SC9102C

SC9102D SILAN | Alldatasheet

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Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 ABSOLUTE MAXIMUM RATINGS (Tamb=25 °C, All voltage referenced to Vss, unless otherwise specified) Characteristic Symbol Value Unit Power Supply Voltage V DD 6.0 V Input Voltage V IN -0.3~VDD +0.3 V Power Dissipation P D 500 mW Operating Temperature Topr -25~+70 °C Storage Temperature Tstg -55~+150 °C

ELECTRICAL CHARACTERISTICS

(Tamb=25 °C,V DD =2.5V, fosc=3.579545MHz, unless otherwise specified) Parameter Symbo l Conditions Min Typ Max Unit Tone/Pulse 2.0 5.5Operating Voltage V DD Memory retension 1.0 5.5 V Tone 0.6 2 Operating Current I OP Pulse, OFF-HOOK, Keypad entry, no load 0.2 0.6 mA Standby Current I S ON-HOOK /G2c8 No keypad entry ,no load VDD =1.0V 0.1 5 µA Memory Retension Current Imr 0.1 0.1 µA Control Pin Input Low Voltage Vil VSS 0.3V DD Control Pin Input High Voltage Vih 0.7V DD VDD V XMUTE Pin Leakage Current Imth V XMUTE =12.0V 1 µA XMUTE Pin Sink Current Imtl V XMUTE =0.5V 1m A HKS Pin Input Current Ihks Vhks=2.5V 0.1 µA Drive Current Ikbd Vn=0V /G2c4 note1/G2c5 41 0 3 0Keyboard Scanning Pin Sink Current Ikbs Vn=2.5/G2c4 note1/G2c5 200 400 µA Key-in Debounce Time t DB 20 ms Pulse Mode Pulse Output Pin Leakage Current Ipoh Vpo=12V -- -- 1.0 µA Pulse Output Pin Sink Current Ipol Vpo=0.5V 1. 0 3.0 -- mA -- 10 --Pulse Rate fpr -- 20 -- pps -- 40:60 --Make/Break Ratio tM /G2d6 tB -- 33:66 -- (to be continued)

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 (continued) Parameter Symbol Conditions Min Typ Max Unit M/B ratio=40:60 -- 40 --Pre-digit Pause /G2c4 Pulse rate=10pps/G2c5 tPDP M/B ratio=33:66 -- 33 -- ms M/B ratio=40:60 -- 20 --Pre-digit Pause /G2c4 Pulse rate=20pps/G2c5 tPDP M/B ratio =33:66 -- 16.5 -- ms Pulse rate=10pps -- 800 --Inter-digit Pause t IDP Pulse rate=20pps -- 600 -- ms Tone Mode Sink Current Itl Vdtmf=0.5V 0.15 -- -- mA AC level Vdtmf Row group/G2c8 R L=10K Ω 120 150 180 mVrms Tone Output Pin Load Resistor R1 Dist.<=-23dB 10 -- -- KΩ Pre-emphasis twist V DD =2.0~5.5 V 1 2 3 dBDTMF Signal Distortion(note 2) Dist. R L=10K Ω -- -30 -23 dB Minimum tone duration Time t TD Auto redial -- 100 -- ms Minimum Intertone Pause Time t TTP Auto redial -- 106 -- ms Note: 1. Vn: Input voltage of any keyboard scanning pin (Row group, Column group) 2/G2ca Distortion (dB) = 20log{[V1 2+V 2 2+V 3 2+…Vn 2)1/2]/[(VL 2+V H 2)1/2]} VL,VH : Row group and Column group signal V1/G2c8 V2… /G2c8 Vn: Harmonic signal (BW = 300Hz~3500Hz/G2c5 ACTUAL FREQUENCY OUTPUT (fosc=3.579545MHz) Keyboard Scanning Pin Standard(Hz) Output Deviation(%) R1 f1 697 699 +0.28 R2 f2 770 766 -0.52 R3 f3 852 848 -0.47 R4 f4 941 948 +0.74 C1 f5 1209 1216 +0.57 C2 f6 1336 1332 -0.30 C3 f7 1477 1472 -0.34

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 PIN DESCRIPTION Pin No. Pin Name Description 15 C1 16 C2 17 C3 18 C4 1 R1 2 R2 3 R3 4 R4 *Provides keyboard scanning. *HKS pin is LOW, the column group stays in “HIGH” and row group stays in “LOW” state. *The keypad is compatible with the standard dual contact matrix keyboard (as figure1b), the inexpensive single contact keyboard (as figure 1a), and electronic input (as figure 1c). *When HKS is “LOW”, a valid key entry is defined by related Row & Column connection or by electronic input. *Activation of two or more keys will result in no response, except for single key. *To avoid keyboard-bouncing error, this chip provides built-in debounce circuit. (The debounce time = 20ms) VDD Column Row Column Row Column VSS VDD VSS Row Figure1a: Single contact form keyboard configuration Figure1b: Dual contact form keyboard configuration Figure1c: Electronic signal input keyboard configuration 8O S C I 9O S C O *Oscillator input & output pins. *The 3.579545MHz oscillator is formed by a built-in inverter inside of this chip and by connecting a 3.579545MHz crystal or a ceramic resonator across the OSCI and OSCO pins. (built-in feedback resistor and capacitor) *When HKS is “LOW”, a valid key-in may turn on this oscillator and generates a 3.579545 MHz clock. (to be continued) /G3 /G3

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 (continued) Pin No. Pin Name Description

13 XMUTE

*Mute output pins. *NMOS open drain output structure. *The output is in “LOW” state during dialing sequence (both Pulse and Tone mode) otherwise this pin is “high-impedance”. *Long (continue) Mute. 11 VSS *Negative power supply pin. 10 VDD *Positive power supply pin.

5 HKS

*Hook switch input pin. *When the handset is in ON-HOOK state, this pin must be pulled “high” in order to disable the dialing operation and decrease the power consumption. *When in OFF-HOOK state, the HKS pin must be pulled “low” state for all function operation. 14 PO *Pulse output signal pin. *NMOS open drain output structure. *The output is “LOW” during pulse dialing and Flash operation, otherwise this output is “floating”.

12 TONE

*Dual Tone Multi-frequency output pin. *In TONE mode, when an entry of digit key (include *, # key), this pin will send out a corresponding DTMF signal. *The TONE pin provides minimum tone duration and minimum intertone pause time to support rapid key-in. If key-in time is less than 100ms, DTMF signal will last for 100ms; otherwise the tone duration will last as long as the key is pressed. MODE Dialing mode VDD Pulse mode Open Pulse mode 7M O D E *Mode selection pin. *Three-state input structure. *This pin can select the three modes shown on the right. V SS Tone mode 6 M/B *M/B ration selection pin. (The function seeing the Dialing signal option table)

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 KEYBOARD OPERATION Symbol definitions: a) ↑ : OFF-HOOK or enable Hand Free function. b) ↓ : ON-HOOK or disable Hand Free function. c) : Input level from low to high. d) : Input level from high to low. e) D1~Dn : Digit key/G2d7 1, 2, 3, 4, 5, 6, 7, 8, 9, 0, *, #, (C1~Cn is same as D1~Dn). f) Dp1~Dpn : Pulse digit/G2d7 1, 2, 3, 4, 5, 6, 7, 8, 9, 0, *, #, (Cp1~Cpn is same as Dp1~Dpn). g) Dt1~Dtn : Tone digit/G2d7 1, 2, 3, 4, 5, 6, 7, 8, 9, 0, *, #, (Ct1~Ctn is same as Dt1~Dtn). h) t F :F l a s h t i m e . i) t P : Pause time. j) t PT : Pulse to Tone wait time. k) t FP : Pause time for flash. l) t RP : Pause time for redial. m) LNB : Last number redial buffer. A/G2c5 Normal Dialing 1. Digit Dialing Procedure /G2d6 ↑ D1, D2…, Dn ↓ Dial out /G2d6 Dt1, Dt2…, Dtn (in Tone mode) Dial out /G2d6 Dp1, Dp2,…, Dpn (in Pulse mode) LNB /G2d6 D1, D2…, Dn 2. Dialing with flash key Procedure /G2d6 ↑ F ,D 1 ,D 2 … ,D n↓ Dial out /G2d6 tF,tFP , Dt1, Dt2…, Dtn (in Tone mode) Dial out /G2d6 tF,tFP , Dp1, Dp2, …, Dpn (in Pulse mode) LNB /G2d6 D1, D2…, Dn 3. Dialing with P→ Tk e y Procedure /G2d6 ↑ D1, D2 …, P → T,… , D n ↓ Dial out /G2d6 Dp1, Dp2, …, tPT , …, Dpn (in Pulse mode) LNB /G2d6 D1, D2 …, P→ T,… , D n Note: If key in digit over maximum digit stored in LNB, then RD is inhibit even after on/off hook.

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 B/G2c5 Mixed dialing Procedure /G2d6 ↑D1, D2…, P → T , D9, D10 …, Dn↓ Dial out /G2d6 Dp1, Dp2, …, tPT , Dt9, Dt10…, Dtn LNB /G2d6 D1, D2…, P→ T , D9, D10 …, Dn C /G2c5 Redial LNB /G2d6 D 1 ,D 2 … ,D n Procedure /G2d6 ↑ RD ↓ Dial out /G2d6 tRP , Dt1, Dt2…, Dtn (in Tone mode) Dial out /G2d6 tRP , Dp1, Dp2,…, Dpn (in Pulse mode) Note: If key in digit over maximum digit stored in LNB, then RD is inhibit. D /G2c5 Pause Function Procedure /G2d6 ↑ D1, D2…, Dn, P, C1 …, Cn ↓ Dial out /G2d6 Dt1, Dt2 ,…, Dtn , tP, Ct1 …, Ctn (in Tone mode) Dial out /G2d6 Dp1, Dp2, …, Dpn , tP, Cp1 …, Cpn (in Pulse mode) LNB /G2d6 D 1 ,D 2 … ,D n , P,C 1 , C 2… ,C n E/G2c5 Flash Function Procedure /G2d6 ↑ D1, D2…, Dn, F, C1 …, Cn ↓ Dial out /G2d6 Dt1, Dt2,…, Dtn , tF,tFP , Ct1 …, Ctn (in Tone mode) Dial out /G2d6 Dp1, Dp2,…, Dpn , tF,tFP , Cp1 …, Cpn (in Pulse mode) LNB /G2d6 C1, C2 …, Cn

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 TEST CIRCUIT A HKS VSS MODE VDD DP DP DT keyboard Operation current 1 2 Standby current Tone output voltage3 Tone distortion4 keyboard HKSVSS TONE VDD keyboard counter and AC meter 10KΩ HKSVSS TONE VDD Spectrum analyzer V 10KΩ A HKSVDD VSS HKS VSS R*VDD Keypad input current (row group)7 ROW MODE A Pulse output sink current (open drain structure) 5 6 Pulse output sink current (inverter structure) HKS VSS R*VDD COLUMN MODEA POFlash key HKSVSS VDD V VEXT A PO VSS VDD HKS V VEXT A keypad input current (column group) /G3 Note: 1. Dist. (dB)=20log{[V1 2+V 2 2+V 3 2+…V n 2)1/2]/[(VL 2+V H 2)1/2]} a. V1…Vn are extraneous frequencies (ie, inter modulation and harmonic), components in the 500Hz to 3400Hz band. b. VL,VH are the individual frequency components of DTMF signal. c. Whether keyboard is pushed refer to the TONE mode time diagram. 2. Sink current Isink=I/(1-Duty Cycle), I is the net DC current measured from ampere meter.

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 3. R*, C* mean other column and row. TIMING DIAGRAMS 3 2 3 HKS KEY IN XMUTE PO TONE OSCO tTD tITP tITP tDB tITP Tone Mode Timming Diagram 3 2 3 HKS KEY IN XMUTE PO TONE OSCO tTD tIDP tIDP tDB tPDP tB tM tIDP Pusle Mode Timming Diagram

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 TIMING DIAGRAMS (continued) 3 2 3 HKS KEY IN XMUTE PO TONE OSCO tTD tITP tITP tDB tITP P→T tPDP tPT Timming Waveform for mixed dialing Operation (by */T key entry) 3 2 3 HKS KEY IN XMUTE PO TONE OSCO tIDP tIDP tDB tPDP tIDP MODE Timming Waveform for mixed dialing Operation (by MODE pin entry)

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 TIMING DIAGRAMS(continued) 3 RD HKS KEY IN XMUTE PO TONE OSCO tDB tITP tITP tITP tTD tITP tRP Tone Mode Redial Timming Diagram 3 RD HKS KEY IN XMUTE PO TONE OSCO tDB tIDP tIDP tIDP tIDPtRP Pulse Mode Redial Timming Diagram

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 TIMING DIAGRAMS(continued) XMUTE PO TONE OSCO tDB tITP tP tITP 3 3 HKS KEY IN XMUTE PO TONE OSCO tDB P tPDP tIDP tIDP tIDP tP tITP Pause key operating timming /G3 HKS KEY IN XMUTE PO TONE OSCO tDB tF tFP Flash key operating timming /G3

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 TYPACAL APPLICATION CIRCUIT SC9102C/D P→T F P RD #/RD */P 18 17 16 15 11 7 6 14 10 5 2-4 Speech network PO C4 C3 C2 C1 V SS MODE M/B XMUTE VDD TONEHKS OSCI OSCO 100kΩ 3.3kΩ 100kΩ 100kΩ 22M Ω A92 A42 100µF 1N4148x2 2.2kΩ 220kΩ 100kΩ 1µF 220kΩ ON/OFF HOOKTip Ring 1N4148x4 1.5kΩ 200Ω C945 0.02µF C945 3.579545MHz DP DP DT 33.3/66.6 10pps 40/60 10pps 33.3/66.6 20pps 1000pF ZNR 120V VDD VDD VDD

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 CHIP TOPOGRAPHY 765 17 16 15 14 13 /G3 /G3 Chip size: 1.35 x 1.33 mm2 /G3 PAD COORDINATES (Unit:µm) Pad No. Symbol X Y Pad No. Symbol X Y 1 P1 -545.0 276.0 10 P10 542.2 176.4 2 P2 -545.0 109.0 11 P11 541.3 349.5 3 P3 -539.0 -266.0 12 P12 541.0 530.5 4 P4 539.0 -453.5 13 P13 324.3 531.5 5 P5 21.2 -528.0 14 P14 131.0 533.0 6 P6 191.0 -528.0 15 P15 -27.0 531.5 7 P7 362.5 -381.5 16 P16 -199.5 531.5 8 P8 529.5 8.5 17 P17 -373.0 531.5 9 P9 540.5 176.4 18 P18 -545.0 463.5 Note: The original point of the coordinate is the die center.

Semiconductors/G3 SC9102C/D /G3 HANGZHOU SILAN MICROELECTRONICS CO.,LTD. /G3 Rev: 2.0 2001-11-02/G3 PACKAGE OUTLINE DIP-18-300-2.54 UNIT: mm 6.40 /G66 0.25 2.54 0.5MIN 4.36MAX3.00MIN 0.46/G66 0.08 23.12/G66 0.3 1.52 7.62 0.25 /G66 0.05

15 Degree

1.27MAX +0.3 /G3