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S mHop Microelectronics C orp.a PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 20V 6A 42.0 @ VGS=2.5V 32.0 @ VGS=4.5V
FEATURES
Super high dense cell design for low R DS(ON) . Rugged and reliable. Wafer level CSP. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 3.0 www.samhop.com.tw Mar,31,2014 Details are subject to change without notice. SC8200 Green Product ESD Protected. 33.0 @ VGS=4.0V 38.0 @ VGS=3.1V S2G2 1.54 㫧 0.03 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 0.65 0.65 4 - φ 0.31 TOP VIEW BOTTOM VIEW Mark area1-pin index mark S1 Unit : mm 1.54 㫧 0.03 0.210 㫧 0.010 0.107 㫧 0.007 FET1 FET2 Gate 2Gate 1 Body Diode Protect Diode Source 2Source 1 Gate Symbol VSSS VGSS ISP A PT °C-55 to 150 IS UnitsParameter 6.0 V V±12Gate-Source Voltage Source-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA=25°C) Limit Source Current-Continuous -Pulsed a A Total Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG W1.6a b 8200 Date Code WLCSP
m ohm 32.0 Symbol Min Typ Max Units BVSSS 20 V IGSS ±10 uA VGS(th) 0.5 V m ohm VGS=4.5V , IS=3A RSS(ON) Source-Source On-State Resistance ISSS uA Gate Threshold Voltage VSS=VGS , IS=1mA VSS=20V , VGS=0V VGS= ±12V , VSS=0V Zero Gate Voltage Source Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Source-Source Breakdown Voltage VGS=0V , IS=250uA ON CHARACTERISTICS SC8200 0.8 1.5 gFS 16 S Qg 175 nC 400 1470 870 tD(ON) ns tr ns tD(OFF) ns tf ns SWITCHING CHARACTERISTICS VDD=20V IS=3A VGS=4.0V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VSS=5V , IS=3AForward Transconductance c VDD=20V,IS=6A, VG1S1=4.0V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VFSS Diode Forward Voltage VGS=0V,IS=1.5A 0.81 1.2 V Note b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. c.Guaranteed by design, not subject to production testing. www.samhop.com.tw Mar,31,2014 m ohm VGS=4.0V , IS=3A 33.0 m ohm VGS=3.1V , IS=3A 38.0 m ohm VGS=2.5V , IS=3A 42.0 16.0 17.0 23.0 25.0 24.0 25.0 29.0 32.0 Ver 3.0 315 160 CISS pF pF pF DYNAMIC CHARACTERISTICS VSS=10V,VGS=0V f=1.0MHzOutput Capacitance Reverse Transfer Capacitance Input Capacitance c COSS CRSS
www.samhop.com.tw Mar,31,2014 VSSS / I SSS IGSS (+) / (--) VGS (off) 10V 1mA | yfs | * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Ver 3.0
www.samhop.com.tw Mar,31,2014 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. td(on), tr, t d(off), tf VIN PW=10 μs D.C. 1% VDD=10V VOUT R SS (on) 4.5V VF(S-S) IS =3A R L=3.33 W Qg Ver 3.0
www.samhop.com.tw Mar,31,2014 Ver 3.0 TOP MARKING DEFINITION WLCSP XXXXA Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) 8200 Thin Version