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S mHop Microelectronics C orp.a

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Super high dense cell design for low R DS(ON) . Rugged and reliable. Wafer level CSP. Dual N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Mar,29,2017 Details are subject to change without notice. SC8180S Green Product ESD Protected. S2G2 1.88 㫧 0.03 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 0.65 0.65 4 - φ 0.31 TOP VIEW BOTTOM VIEW Mark area1-pin index mark S1 Unit : mm 1.88 㫧 0.03 0.100 㫧 0.010 FET1 FET2 Gate 2Gate 1 Body Diode Protect Diode Source 2Source 1 Gate Symbol VSSS VGSS ISP A PT °C-55 to 150 IS UnitsParameter 5.5 V V±8Gate-Source Voltage Source-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA=25°C) Limit Source Current-Continuous -Pulsed c A Total Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG W1.6 a c WLCSP 8180S Date Code Ver 1.1 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 12V 5.5A 11.9 @ VGS=2.5V 7.9 @ VGS=4.5V 8.3 @ VGS=4.0V 9.7 @ VGS=3.1V 8.5 @ VGS=3.8V

m ohm 10.0 Symbol Min Typ Max Units BVSSS 12 V IGSS ±1 uA VGS(th) 0.5 V VGS=4.5V , IS=2.75A RSS(ON) Source-Source On-State Resistance ISSS uA Gate Threshold Voltage VSS=VGS , IS=250uA VSS=12V , VGS=0V VGS= ±5V , VSS=0V Zero Gate Voltage Source Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Source-Source Breakdown Voltage VGS=0V , IS=250uA ON CHARACTERISTICS SC8180S 0.7 1.5 gFS 26 S Qg 213 nC 898 1920 1910 tD(ON) 16.8 ns tr ns tD(OFF) ns tf ns SWITCHING CHARACTERISTICS VDD=12V IS=2.75A VGS=4.0V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VSS=5V , IS=2.75AForward Transconductance b VDD=12V,IS=2.75A, VG1S1=4.0V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VFSS Diode Forward Voltage VGS=0V,IS=1.25A 0.77 1.2 V www.samhop.com.tw Mar,29,2017 m ohm VGS=3.8V , IS=2.75A 11.0 m ohm VGS=3.1V , IS=2.75A 13.8 m ohm VGS=2.5V , IS=2.75A 20.0 7.9 8.5 9.7 11.9 Ver 1.1 m ohm VGS=4.0V , IS=2.75A 10.78.3 Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. _ _ 5.9 6.2 7.1 7.6 6.1 ±10 uAVGS= ±8V , VSS=0V

www.samhop.com.tw3 VSSS / I SSS IGSS (+) / (--) VGS (off) 10V 1mA | yfs | * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Mar,29,2017 Ver 1.1

www.samhop.com.tw4 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. td(on), tr, t d(off), tf VIN PW=10 μs D.C. 1% VDD=10V VOUT R SS (on) 4.5V VF(S-S) IS =3A R L=3.33 W Qg Mar,29,2017 Ver 1.1

www.samhop.com.tw Mar,29,2017 120 100 150125100755025 175 TA - Ambient Temperature - °C dT - Percentage of rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 0.5 2.5 1.5 150125100755025 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz 0.1 1 10 0.1 100 VGS=4.5V Single Pulse TA=25 C RDS(ON) Limit 0.01 FORWARD BIAS SAFE OPERATING AREA 1ms 10ms DC VSS - Source to Source Voltage - V IS - Source Current - A 100 1000 0.001 0.01 0.1 1 10 100 1000 Mounted on FR-4 board Single Pulse Pulse width tw (S) rth - tw Transient thermal impedance rth (°C/W) 100ms Ver 1.1

www.samhop.com.tw Mar,29,2017 10.80.60.40.2 VSS - Source to Source Voltage - V IS - Source Current - A SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE 0.01 0.1 100 VGS - Gate to Source Voltage - V IS - Source Current - A FORWARD TRANSFER CHARACTERISTICS 2.4 25°C 75°C 125°C TA = -25°C -50 0.5 0.8 0.7 0.6 150100500 Tch - Channel Temperature - °C VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE IS = 250uA 0.01 0.01 0.1 100 1001010.1 IS - Source Current - A ЮyfsЮ- Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. SOURCE CURRENT 0.9 TA = -25°C 25°C 75°C 125°C 1001010.1 IS - Source Current - A RSS(on) - Source to Source On-state Resistance - mΩ SOURCE TO SOURCE ON-STATE RESISTANCE vs. SOURCE CURRENT 8642 VGS - Gate to Source Voltage - V RSS(on) - Source to Source On-state Resistance - mΩ SOURCE TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE IS = 2.75A 0.4 VGS = 2.5 V 4.5 V 3.1 V 4.0 V VGS = 4.5 V 3.1 V 2.5 V 4.0 V Ver 1.1

www.samhop.com.tw Mar,29,2017 0.01 0.1 100 1.51.00.50 VF(S-S) - Source to Source Voltage - V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE -50 150100500 Tch - Channel Temperature - °C RSS(on) - Source to Source On-state Resistance - mΩ SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE IS = 2.75 A 3.02.52.0 VGS = 0 V VGS = 2.5 V3.1 V 4.0 V 4.5 V 0.1 100 1000 101 IS - Source Current - A td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS VDD = 12.0 V VGS = 4.0 V RG = 6 Ω td(on) tr td(off) tf QG - Gate Charge -nC VGS - Gate to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 161284 VDD = 12 V IS = 2.75 A Ver 1.1

www.samhop.com.tw Mar,29,2017 TOP MARKING DEFINITION WLCSP XXXXA Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) 8180S Thin Version PIN 1 Ver 1.1