SC8100S

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S mHop Microelectronics C orp.a PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 12V 8A 7.1 @ VGS=2.5V 4.6 @ VGS=4.5V

FEATURES

Super high dense cell design for low R DS(ON) . Rugged and reliable. Wafer level CSP. Dual N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Mar,16,2017 Details are subject to change without notice. SC8100S Green Product ESD Protected. 4.8 @ VGS=4.0V 5.7 @ VGS=3.1V 1.61 㫧 0.03 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 0.65 0.65 6 - φ 0.31 BOTTOM VIEW Unit : mm 2.55 㫧 0.03 0.10 㫧 0.01 FET1 FET2 Gate 2Gate 1 Body Diode Protect Diode Source 2Source 1 Gate Symbol VSSS VGSS ISP A PT °C-55 to 150 IS UnitsParameter V V±8Gate-Source Voltage Source-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA=25°C) Limit Source Current-Continuous -Pulsed c A Total Power Dissipation Operating Junction and Storage Temperature RangeTJ, TSTG W1.3 a c 0.65 G1 G2 4.9 @ VGS=3.8V WLCSP 8100S Date Code 1-pin index mark S1 0.65 0.65 0.65 φ 0.31 LAND PATTERN (REFERENCE)TOP VIEW Ver 2.0

m ohm 5.7 Symbol Min Typ Max Units BVSSS 12 V IGSS ±1 uA VGS(th) 0.5 V VGS=4.5V , IS=4A RSS(ON) Source-Source On-State Resistance ISSS uA Gate Threshold Voltage VSS=VGS , IS=1mA VSS=12V , VGS=0V VGS= ±5V , VSS=0V Zero Gate Voltage Source Current Gate-Body Leakage Current ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) OFF CHARACTERISTICS Parameter Conditions Source-Source Breakdown Voltage VGS=0V , IS=250uA ON CHARACTERISTICS SC8100S 0.8 1.3 gFS 16 S Qg 296 nC 1080 3267 2555 tD(ON) 18.4 ns tr ns tD(OFF) ns tf ns SWITCHING CHARACTERISTICS VDD=12V IS=4A VGS=4.0V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time VSS=5V , IS=4AForward Transconductance b VDD=12V,IS=4A, VG1S1=4.0V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VFSS Diode Forward Voltage VGS=0V,IS=2A 0.77 1.2 V www.samhop.com.tw Mar,16,2017 m ohm VGS=4.0V , IS=4A 5.9 m ohm VGS=3.8V , IS=4A 6.3 m ohm VGS=3.1V , IS=4A 7.8 4.6 4.8 4.9 5.7 VGS=2.5V , IS=4A 11.07.1 m ohm Ver 2.0 3.6 3.7 3.8 4.2 4.8 Notes a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. _ _

www.samhop.com.tw Mar,16,2017 VSSS / I SSS IGSS (+) / (--) VGS (off) 10V 1mA | yfs | * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Ver 2.0

www.samhop.com.tw Mar,16,2017 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. td(on), tr, t d(off), tf VIN PW=10 μs D.C. 1% VDD=10V VOUT R SS (on) 4.5V VF(S-S) IS =3A R L=3.33 W Qg Ver 2.0

www.samhop.com.tw Mar,16,2017 120 100 150125100755025 175 TA - Ambient Temperature - °C dT - Percentage of rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 0.5 2.5 1.5 150125100755025 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 1 inch , 2oz 0.1 1 10 0.1 100 VGS=4.5V Single Pulse TA=25 C RDS(ON) Limit 0.01 FORWARD BIAS SAFE OPERATING AREA 100us 1ms 10ms DC VSS - Source to Source Voltage - V IS - Source Current - A 100ms 100 1000 0.001 0.01 0.1 1 10 100 1000 Mounted on FR-4 board Single Pulse Pulse width tw (S) rth - tw Transient thermal impedance rth (°C/W) Ver 2.0

www.samhop.com.tw Mar,16,2017 10.80.60.40.2 VSS - Source to Source Voltage - V IS - Source Current - A SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE 0.01 0.1 100 VGS - Gate to Source Voltage - V IS - Source Current - A FORWARD TRANSFER CHARACTERISTICS 2.4 25°C 75°C 125°C TA = -25°C -50 0.5 0.8 0.7 0.6 150100500 Tch - Channel Temperature - °C VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE IS = 250uA 0.01 0.01 0.1 100 1001010.1 IS - Source Current - A ЮyfsЮ- Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. SOURCE CURRENT 0.9 TA = -25°C 25°C 75°C 125°C 1001010.1 IS - Source Current - A RSS(on) - Source to Source On-state Resistance - mΩ SOURCE TO SOURCE ON-STATE RESISTANCE vs. SOURCE CURRENT 8642 VGS - Gate to Source Voltage - V RSS(on) - Source to Source On-state Resistance - mΩ SOURCE TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE IS = 4.0 A 0.4 3.1 V 4.0 V VGS = 4.5 V 3.1 V 2.5 V 4.0 V 3.8 V 3.8 V 4.5 V VGS = 2.5 V Ver 2.0

www.samhop.com.tw Mar,16,2017 0.01 0.1 100 1.51.00.50 VF(S-S) - Source to Source Voltage - V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE -50 150100500 Tch - Channel Temperature - °C RSS(on) - Source to Source On-state Resistance - mΩ SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE IS = 4.0 A 3.02.52.0 VGS = 0 V VGS = 2.5 V 3.1 V 4.0 V 4.5 V 0.1 100 1000 101 IS - Source Current - A td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS VDD = 12.0 V VGS = 4.0 V RG = 6 Ω td(on) tr td(off) tf QG - Gate Charge -nC VGS - Gate to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS 161284 12 V IS = 4.0 A 3.8 V Ver 2.0 VDD = 7 V

www.samhop.com.tw Mar,16,2017 TOP MARKING DEFINITION WLCSP XXXXA Product No. Wafer Lot No. Production Month (1,2 ~ 9, A,B,C) 8100S Thin Version Pin 1 Ver 2.0