SC2999 SANYO | Alldatasheet
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+ FBET series. + Very small-sized package permitting sets to be small-sized and slim. + High fy (f7=750MHz typ.) and small cre (cre=0.6pF typ.) Absolute Maximum Ratings at Ta=25°c unit Collector to Base Voltage VcBO 25 Vv Collector to Emitter Voltage VCEO 20 v Emitter to Base Voltage VEBO 3 v Collector Current Ic 300 «mA Collector Dissipation PC 150 mW Junction Temperature Tj 125 °c Storage Temperature Tstg -40 to #125. °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo Vcp=10V, IE=0 0.1 2A Emitter Cutoff Current TEBO VEB=3V, Ic=0 0.1 pA DC Current Gain hFE VcE=6V,I¢=1mA 40* 200* Gain-Bandwidth Product fp VcE=6V, I¢=4mA 450 750 MHz Reverse Transfer Capacitance Cre VcBp=6V, £=1MHz 0.6 0.9 pF Base to Collector Time Constant rpb'Cc VcB=6V,Ic=lmA, £=31.9MHz 19 ps Noise Figure NF VcE=6V,Ic=lmA,f=100MHz 2.2 4B Power Gain PG VcE=6V, Ic=1mA, £=100MHz 28 4B *: The 2SC2999 is classified as follows according to hpg at ImA. NF, PG Test Circuit ~Sp uy L3) OUTPUT yor 300 ~%p ~2p Lz “Pp 1000p I 1000p Package Dimensions 2033 (unit: mm ) | a+—— 15.0 A) ve i _ ry
7 ESET |e
Ll: 1mmg plated wire, 10mng 57, pitch’ 15mm, +a SS 2 [a tapped at 2T from base side. . 5 ee aes aD L2: lmmg plated wire, 10mm 7T, pitch LOmm, 3 i " patted at 2T from Vo side. Br Base ot L3: lmmg enameled wire, 10mmé 37, pitch 10mm. C: Collector Unit(Capacitance : F) E: Emitter SANYO: SPA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters - TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3107KI/3085KI/5124KI ,MP No.931-1/5
. 2802999 " oo
7 Ic = Vee 0 Ig - Vee
ts 60 LA: = ry } a= eee |e " ' [a AG | A _ Pm | Pay! a 32 °% 2 4 6 8 ww °> 02 Ose 0.6 0.8 1.0 Collector to Emitter Voltage,Vce - V Base to.Emitter Voltage,Vpp - V hre - Ic 2 fr - Ic PTT TTT ti oe ‘ ' 41000 ‘ — Pd) eee Fae NN OA Pow PL ANA g : PUTT HN go | =
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PULTE |) bee ex ~ 4.0 0 3 er) | 7 tI “Collector Current,Ic - mA Collector Current, Ic - mA a Cre - VcB Cob - Vos wy | 4} tr AP Ty ft ° [| | Per yy 8 carr zs 10 2s ry 10 Collector to Base Voltage,VcB - V Collector to Base Voltage,Vcp - V op Tt Py ee Pete ED gi] TRE ay a eON DY fe HEINE Eee : E ee ORC SS ZC = a TTT Mo] of Ree EE to i ” collector Current,Ic¢ - mi” & "collector current,1e - mA - . No.931-2/5
: Po NN ie s,.|_| | a a be | a : OG amesmnennl, 8 ee Collector Current, Tc ut Admittance yie - f oT 5.07 cr tITfT ld as ee Bey Om | ‘faa (= S 5 ee a A rd a | J HOA Pe 2 pt att ZI 2 CT a Sopp tet A a
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4 an PA . [ f qt PO oe ou So i — Se 7 eo a = pretuency, } ° Frequency, £ ~ MHz Output Admittance yoe - 0 i af = [TTT _) Forward Transfer Admi one 10 eee PEE -aSSSee| eS De Pet. @ {tt [ Bos Het 7itt + ji ap. Torr st Pann ' enene nce : ee ol oe le A = . ; | ty ° “ya a et Pill | pee &
100 Frequency, £ - Miz Output Admittance yoe aie
Ta * bf geo | Input Admittance yie <n te O=w.aR [TY =e aoe
9 Nog=6-0 | [| Bae f f— ,
10 = : : pee CEE === A [A bs P i 4 I 1 to ET | eT et AHHH Coo 2 | [fs oo Te Thiel | “4 a to Le pp ee a cj ann = 0 Collector Current,Ic - iA ° Collector Current,I¢ -,mA eyes SE earrenivic mk TT _Setester currents
282999 ; : ee Py Input Admittance yie - VCE 2 Output Admittance yoe - VCE a a a es ee PS i es eee Tf ae ey Pp Pe eR ee a 54 ~~ : in ee ee 910 [et i a a ee i —— i | —_ PP os} 10 10 3740 Collector to Emitter Voltage,VcE - V Collector to Emitter Voltage,VcE - V 2a yie - Ic 10 Reverse Transfer Admittance yre - IC [ f= 100.5 : a ee & mot tt = a a a ee a a ee | °0 Pitty at a 7 Cr on ! got a cane i. 10 pt t 3 [4 = [| i a P= A ai a TY | To) Pe a T= 100iH2 \\ ott Toler || Collector ‘Current. te - mA ° collector Current,Ic - ma”
2 Forward Transfer Admittance yfe - Ic 0 Output Admittance yoe - IC
£= Toot Tt pn ee £= 100tH2 mp am a J UZ SS ee oe a FS eS A Let eg TE ee aa Zo os aan a a 3 LZ! a CR <ce SO 4} +} + A = Pret yy iff} +H 10 | 5 A collector Current,Ic - mA 0 collector ‘current, Ic - mA °
100 Input Admittance yie - VCE to Reverse Transfer Admittance yre - VCE
fo FS 1002 T= 1OOUH: SS ee ee FS PO - sg | Ee SS = Od 1 a a 1 1 Th {|_| fo | [eee TT i ee ——— Lo 4.0 2 3 5 10 oot 10 3 5 10 Collector’ to Emitter Voltage,Vce - V Collector’ to’ Emitter Voltage, VcE - V No.931-4/5
10 Forward Transfer Admittance yfe - VCE 0 Output Admittance yoe - VCE
7 =1.Cr8 7 Ig=l. 2 tt ToS ste He a a ee ee 13 3 es & a s 2 oe ce eee eee ee ee ee ee aan ; ps ee | [ [| gj [J tb tty | ype Pt yet fe ee
745 Ts ST T+ z 3 & 7
Collector to Emitter Voltage,VcE - V Collector to Emitter Voltage, VcE - V No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems. vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTO., its affiliates, Subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. : No.931-5/5