DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Features

Input to linear regulator (VIN): 1.0V to 3.6V Output (VTT): 0.5V to 1.8V Bias Voltage (VDD): 2.35V to 3.6V Up to 3A sink or source from VTT for DDR through DDR4 + 1% over temperature (with respect to VDDQ/2, in- cluding internal resistor divider variation) VREF and VTT Logic-level enable input Built in soft-start Thermal shutdown with auto-restart Over current protection Minimal output capacitance

Applications

Description

The SC2599 is designed to meet the latest JEDEC specifi - cation for low power DDR3 and DDR4, while also support- ing DDR and DDR2. The SC2599 regulates up to + 3A for VTT and up to + 40mA for VREF. The SC2599 also provides an accuracy of + 1% over tem- perature (which takes into account the internal resistor divider) for VREF and VTT for the memory controller and DRAM. SC2599 protection features include thermal shutdown with auto-restart for VTT and over-current limit for both VTT and VREF. Under-Voltage-Lock-Out circuits are included to ensure that the output is off when the bias voltage falls below its threshold, and that the part behaves elegantly in power- up or power-down. The low external parts count combined with industry leading specifi cations make SC2599 an attractive solution for DDR through DDR4 termination. VINVDD GND VREF VTTS VTTVDDQ EN VDDQ C VDD C IN C VTT C VREF (1) 1μF 0.1 μF 2x10 μF 3x10 μF PAD Typical Application Circuit Rev. 2.0 Note: (1) This component is optional.

Ordering Information

Notes: (1) Available in tape and reel only. A reel contains 3000 devices. (2) Lead-free packaging only. Device is WEEE and RoHS compliant and halogen-free. Device Package SC2599ULTRC(1)(2) MLPD8 SC2599EVB Evaluation Board nnn = Part Number (Example: C99) Yw = Datecode MLPD8 - 2mm x 2mm x 0.6mm

Exceeding the above specifi cations may result in permanent damage to the device or device malfunction. Operation outside of the parameters specifi ed in the Electrical Characteristics section is not recommended. Notes: (1) HBM: tested according to ANSI/ESDA/JEDEC JS-001. CDM: tested according to JESD-C101E. (2) Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards. (3) Based upon lab measurement on EVB board: 3 x 2 (in), 4 layer FR4 PCB with thermal vias under the exposed pad. Absolute Maximum Ratings ESD Protection Level (HBM) Thermal Information Thermal Resistance, Junction to Ambient(2) (°C/W) . . . 57 Thermal Resistance, Junction to Ambient(3) (°C/W) . . . 45 Parameter Symbol Conditions Min Typ Max Units Input Supplies LDO Supply Voltage V IN 1 3.6 V VDD Supply Voltage V DD 2.35 3.6 V VDD UVLO Threshold Measured at VDD pin, rising edge 2.0 2.25 V Measured at VDD pin, falling edge 1.95 2.15 VDD UVLO Hysteresis 0.1 V Quiescent Current for VDD I Q Load =0A, EN = High, VVDDQ > 1V 415 700 μA Shutdown Current for VDD I QSD Load =0A, EN = Low, VVDDQ > 1V, IREF = 0A 160 400 μA Load =0A, EN = Low, VVDDQ = 0V, IREF = 0A 100 160 μA Quiescent Current for VIN IIN Load =0A, EN = High 3 30 μA Shutdown Current for VIN IINSD Load =0A, EN = Low 3 20 μA VTT Output Output Voltage Range VTT 0.5 1.8 V Output Voltage Tolerance with respect to VDDQ/2 Load = 0A, VTT = 0.5V to 1.8V -1 +1 %

Electrical Characteristics

Parameter Symbol Conditions Min Typ Max Units Load Regulation -2A < Load < 2A -25 +25 mV On-Resistance High-Side MOSFET (source), Load = 0.1A 40 100 150 mΩ Low-Side MOSFET (sink), Load = 0.1A 50 140 300 Discharge MOSFET On-Resistance EN = Low 8 Ω Reference Input/Output VDDQ Voltage Range 1 3.6 V VDDQ Input Bias Current 01 0 μ A Tolerance with respect to VDDQ/2 Load = 0A, VREF = 0.5V to 1.8V -1 1 % VREF Source Current Limit 40 mA VREF Sink Current Limit - 40 Protection Thermal Shutdown Threshold 160 Thermal Restart Hysteresis 20 0C Output Current Limit Threshold Ambient Temperature: 25 0C 3.7 4.3 A Soft-Start VTT Soft-Start Time From EN = High to V TT = 90% VREF 40 μs Logic EN Logic Threshold EN = High 1.7 V EN = Low 0.3 EN Input Current -1 1 μA Electrical Characteristics (continued)

EN\\ R R Thermal Shutdown Pin # Pin Name Pin Function 1 VDD Input bias voltage — 2.35V to 3.6V . Connect a ceramic capacitor from this pin to GND. 2 VIN LDO input range — 1V to 3.6V. Connect ceramic capacitors from this pin to GND. 3 VTT Output of the linear regulator. Connect ceramic capacitors from this pin to GND. 4 GND Ground reference for the IC. 5E N Logic input to enable or disable the VTT output. If EN pin is grounded to shut down the linear regulator, VREF remains active. 6 VTTS VTT output sense input. Connect VTTS to the output at the output capacitor to implement remote sense. 7 VREF The reference output, equal to one half of VDDQ. Connect a 100nF capacitor from this pin to GND. 8 VDDQ External reference input; range 1V to 3.6V. PAD GND Thermal pad. This pad must be connected to GND. For optimal heat sinking, connect to the GND plane us- ing multiple vias. Pin Descriptions

Detailed Application Circuit VIN

4 GND

3.3V VREF EN C 3 C 4 R 1

100 Ohm

Reference Designator Description Value Part Number Manufacture C1, C2, C3, C4, C5, Ceramic Capacitor 10uF/0805/X7R GRM21BR71A106KE51 Murata C6 Ceramic Capacitor 1uF/0603/X7R GRM188R71A105KA61D Murata C7, C8 Ceramic Capacitor 0.1uF/0603/X7R GRM188R71H104KA93D Murata Bill Of Materials

0.6V VTT Regulation Sink/Source 0.580 0.590 0.600 0.610 0.620 -3 -2 -1 0 1 2 3 250C 850C -400C Sink Source Characteristics in this section are based upon the detailed application circuit on page 6. 0.75V VTT Regulation Sink/Source 0.9V VTT Regulation Sink/Source 0.6V VREF Regulation Sink/Source 0.75V VREF Regulation Sink/Source 0.9V VREF Regulation Sink/Source VTT Current (A) VTT Regulation (V) 0.730 0.740 0.750 0.760 0.770 -3 -2 -1 0 1 2 3 Sink Source 250C 850C -400C VTT Current (A) VTT Regulation (V) 0.880 0.890 0.900 0.910 0.920 -3 -2 -1 0 1 2 3 Sink Source 250C 850C -400C VTT Current (A) VTT Regulation (V) 0.580 0.590 0.600 0.610 0.620 Sink Source 250C 850C -400C VREF Current (A) VREF Regulation (V) 0.730 0.740 0.750 0.760 0.770 Sink Source 250C 850C -400C VREF Current (A) VREF Regulation (V) 0.880 0.890 0.900 0.910 0.920 Sink Source 250C 850C -400C VREF Current (A) VREF Regulation (V)

Start-Up and Shutdown Using EN Characteristics in this section are based upon the detailed application circuit on page 6. Start-Up Using VDDQ VIN = 1.2V, VDD = 3.3V, VREF = 0A, VTT = 0A Load Transient Source and Sink: -1A to +1A VTT (200mV/div) VREF (200mV/div) VDDQ (200mV/div) EN (2V/div) 500us/div 2ms/div VREF (200mV/div) VTT (200mV/div) VDDQ (200mV/div) VDD (1V/div) Source Current Load (1A/div) VTT (20mV/div) 200us/div Shutdown Using VDD VDDQ = 1.2V, VIN = 1.2V, VDD = 3.3V VREF = 0A, VTT = 0A, VIN = 1.2V VREF = 40mA, VTT = 1A VDD (1V/div) VREF (200mV/div) VTT (200mV/div) 5ms/div VIN = VDDQ (200mV/div) Sink Current Load (1A/div) Current Limit with VTT Shorted VDDQ = 1.2V, VIN = 1.2V, VDD = 3.3V 10ms/div VTT (100mV/div) Input Current (1A/div) Start-Up Using VDD VTT (200mV/div) 1ms/div VIN = VDDQ (200mV/div) VREF (200mV/div) VDD (1V/div) VREF = 40mA, VTT = 1A 7mV

Outline Drawing — MLPD8

Land Pattern — MLPD8

© Semtech 2015 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any conse- quence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellec- tual property rights. Semtech assumes no responsibility or liability whatsoever for any failure or unexpected operation resulting from misuse, neglect improper installation, repair or improper handling or unusual physical or electrical stress including, but not limited to, exposure to parameters beyond the specifi ed maximum ratings or operation outside the specifi ed range. SEMTECH PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED OR WARRANTED TO BE SUITABLE FOR USE IN LIFE- SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF SEMTECH PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE UNDERTAKEN SOLELY AT THE CUSTOMER’S OWN RISK. Should a customer purchase or use Semtech products for any such unauthorized application, the customer shall indemnify and hold Semtech and its offi cers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs damages and attorney fees which could arise. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact Information Semtech Corporation Power Mangement Products Division

200 Flynn Road, Camarillo, CA 93012

Phone: (805) 498-2111 Fax: (805) 498-3804 www.semtech.com